High microwave power performance of self-aligned InGaP/GaAs heterojunction bipolar transistors

Yang, L.W.; Fu, S.T.; Clark, Blythe; Brozovich, R.S.; Lin, H.H.; Liu, S.M.J.; Chao, P.C.; Ren, F.; Abernathy, C. R.; Pearton, S.J.; Lothian, J. R.; Wisk, P.; Fullowan, T. R.; Chiu, T.-Y.; Pei, S. S.

doi:10.1109/cornel.1993.303067

Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits

DOI: 10.1109/cornel.1993.303067

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High microwave power performance of self-aligned InGaP/GaAs heterojunction bipolar transistors

L.W. Yang¹,

S.T. Fu²,

Blythe Clark³

et al.

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Cited by 3 publications

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Fully monolithic Ku and Ka-band GaInP/GaAs HBT wideband VCOs

Blanck¹,

Delage²,

Cassette³

et al.

Proceedings of 1994 IEEE Microwave and Millimeter-Wave Monolithic Circuits Symposium

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High microwave power performance of self-aligned InGaP/GaAs heterojunction bipolar transistors

Cited by 3 publications

References 7 publications

Fully monolithic Ku and Ka-band GaInP/GaAs HBT wideband VCOs

Fully monolithic Ku and Ka-band GaInP/GaAs HBT wideband VCOs

Fully monolithic Ku and Ka-band GaInP/GaAs HBT wideband VCOs

Low voltage X-band InGaP/GaAs power heterojunction bipolar transistor

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