High Mg content wurtzite phase Mg<sub>x</sub>Zn<sub>1-x</sub>O epitaxial film grown via pulsed-metal organic chemical vapor deposition (PMOCVD)

Alema, Fikadu; Ledyaev, Oleg; Miller, Ross A.; Beletsky, Valeria; Hertog, B.; Osinsky, A.; Schoenfeld, Winston V.

doi:10.1117/12.2217139

Cited by 6 publications

(3 citation statements)

References 29 publications

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“…However, AlGaN/GaN heterojunction has a high conduction band discontinuity which impedes the flow of photogenerated electrons and reduces the performance of photodetectors . And high Mg‐content MgZnO with high crystal quality is difficult to achieve by epitaxial growth due to the phase segregation in single wurtzite phase MgZnO …”

Section: Introductionmentioning

confidence: 99%

Broadband Ultraviolet Photodetector Based on Vertical Ga₂O₃/GaN Nanowire Array with High Responsivity

Zhang

Ding

et al. 2019

Advanced Optical Materials

103

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attracted significant attention, which has a vast and growing number of military and civilian applications such as fire detection, missile interception, ozone hole monitoring, bioaerosol detection, astronomical imaging, and so on. [1][2][3] As the continuous improvement of devices integration, environment complexity, and interference technology, BUV photodetectors can effectively reduce false alarm rates in early warning, searching, and tracking systems, to improve the accuracy and versatility of detection systems in various situations. Many heterojunction structures based on wide-band-gap semiconductors have been reported to achieve the BUV photodetectors such as AlGaN/GaN, MgZnO/ZnO, and Ga 2 O 3 /GaN heterojunction. [4][5][6][7][8][9][10] However, AlGaN/GaN heterojunction has a high conduction band discontinuity which impedes the flow of photogenerated electrons and reduces the performance of photodetectors. [11] And high Mg-content MgZnO with high crystal quality is difficult to achieve by epitaxial growth due to the phase segregation in single wurtzite phase MgZnO. [12] β-Ga 2 O 3 with an ultrawide bandage of 4.9 eV is considered as a promising candidate for UV detection. [13,14] It has great thermal and chemical stability, determining its possibility of working at high temperatures and strong radiations. Moreover, there is a small lattice mismatch and a low conduction band offset at the interface between Ga 2 O 3 and GaN. These characteristics mean that Ga 2 O 3 /GaN heterojunction could be a potential for BUV photodetectors. Kalra et al. [6] demonstrated epitaxial β-Ga 2 O 3 /GaN-based vertical metal-heterojunctionmetal multiband UV photodetectors with the responsivity (R) of 3.7 A W −1 at 256 and 365 nm. For saving energy and broadening the application prospects of UV photodetectors, Guo et al. [15] fabricated a super-high-performance self-powered UV photodetector based on the GaN/Sn:Ga 2 O 3 p-n junction generated by depositing a Sn-doped n-type Ga 2 O 3 thin film onto a p-type GaN thick film. The responsivity at 254 nm reached up to 3.05 A W −1 without consuming external power. Lin et al. [16] used graphene as the transparent conductive layer to form graphene/β-Ga 2 O 3 /GaN heterojunction. With the help of largearea transparent electrode, a typical "sandwich" structure UV photodetector with low dark current density (1.25 × 10 −8 A cm −2 ) and high sensitivity (12.8 A W −1 ) was successfully assembled. Broadband ultraviolet (BUV) photodetectors responding to the multiband spectrum can effectively reduce false alarm rates and improve the accuracy and versatility of detection systems in various situations. A high-responsivityBUV photodetector based on vertical Ga 2 O 3 /GaN nanowire array is proposed and demonstrated. Ga 2 O 3 /GaN nanowires are obtained by partially thermally oxidizing GaN nanowires grown by molecular beam epitaxy and used to combine with a monolayer graphene film to form graphene/Ga 2 O 3 /GaN heterojunction. Moreover, the oxidation mechanism of GaN nanowires is further investigated by ...

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Section: Introductionmentioning

confidence: 99%

Broadband Ultraviolet Photodetector Based on Vertical Ga₂O₃/GaN Nanowire Array with High Responsivity

Zhang

Ding

et al. 2019

Advanced Optical Materials

103

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“…Interestingly, it is clear from the spectra presented in Figure 2 (a) that a photo-response at photon energies lower than the bandgap of the material is observed for each detector. This indicates the presence of carrier transitions (sub-band response) which may result from defect levels or band tails introduced due to stacking faults during the synthesis process [26,27]. In addition, for the alloyed films the sub-band response could result from microscopic Mg composition fluctuations in the films [11,28].…”

Section: Resultsmentioning

confidence: 99%

“…After illumination at a wavelength ~  P , the resistance generally reduced without losing its upward trend with Mg content. The non-linear behavior observed in the I-V characteristics of the detectors indicates the formation of a Schottky barrier at the MgZnO andNi/Au bilayer junctions[26].…”

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confidence: 98%

High responsivity solar blind photodetector based on high Mg content MgZnO film grown via pulsed metal organic chemical vapor deposition

Alema

Hertog

Ledyaev

et al. 2016

Sensors and Actuators A: Physical

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Metal-semiconductor-metal (MSM) structured solar blind photodetectors were fabricated based on various Mg content wurtzite Mg x Zn 1-x O epitaxial films grown via pulsed metal organic chemical vapor deposition. The response spectra of the devices showed a peak position that shifts from ~383 nm to 276 nm for Mg content, x, between 0.0 and 0.51, covering a wide portion of the ultraviolet spectral region, extending well into the solar blind window. At 10 V bias, a large responsivity of ~1.8x10 4 A/W was obtained at 276 nm for a device based on a high Mg content (x=0.51) MgZnO film. To the best of our knowledge, this responsivity is the highest ever reported for a MgZnO based device and its origin is attributed to large internal gain resulting from carrier trapping at the MgZnO/Ni/Au interface. This is confirmed by the presence of an asymmetric Schottky barrier height on the two MSM contacts. Conversely, the response speed of the devices was slow with the 10%-90% rise and fall times measured to be in the millisecond range. The results reported in this work show the realization of high responsivity MgZnO based solar blind photodetectors, providing a significant step in the development of MgZnO alloy based of detector.

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Electrochemical synthesis of Zn:ZnO/Ni2P and efficient photocatalytic degradation of Auramine O in aqueous solution under multi-variable experimental design optimization

et al. 2019

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High Mg content wurtzite phase Mg_xZn_1-xO epitaxial film grown via pulsed-metal organic chemical vapor deposition (PMOCVD)

Cited by 6 publications

References 29 publications

Broadband Ultraviolet Photodetector Based on Vertical Ga₂O₃/GaN Nanowire Array with High Responsivity

Broadband Ultraviolet Photodetector Based on Vertical Ga₂O₃/GaN Nanowire Array with High Responsivity

High responsivity solar blind photodetector based on high Mg content MgZnO film grown via pulsed metal organic chemical vapor deposition

Electrochemical synthesis of Zn:ZnO/Ni2P and efficient photocatalytic degradation of Auramine O in aqueous solution under multi-variable experimental design optimization

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High Mg content wurtzite phase MgxZn1-xO epitaxial film grown via pulsed-metal organic chemical vapor deposition (PMOCVD)

Cited by 6 publications

References 29 publications

Broadband Ultraviolet Photodetector Based on Vertical Ga2O3/GaN Nanowire Array with High Responsivity

Broadband Ultraviolet Photodetector Based on Vertical Ga2O3/GaN Nanowire Array with High Responsivity

High responsivity solar blind photodetector based on high Mg content MgZnO film grown via pulsed metal organic chemical vapor deposition

Electrochemical synthesis of Zn:ZnO/Ni2P and efficient photocatalytic degradation of Auramine O in aqueous solution under multi-variable experimental design optimization

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High Mg content wurtzite phase Mg_xZn_1-xO epitaxial film grown via pulsed-metal organic chemical vapor deposition (PMOCVD)

Broadband Ultraviolet Photodetector Based on Vertical Ga₂O₃/GaN Nanowire Array with High Responsivity

Broadband Ultraviolet Photodetector Based on Vertical Ga₂O₃/GaN Nanowire Array with High Responsivity