High-mesa Ridge/BH Hybrid Structure Optical Gating Device based on Cross-Absorption Modulation of Electro-absorption Modulator

Yamada, Atsushi; Nagashima, Y.; Onuki, S.; Shimose, Y.; Mori, Toshihiro; Otani, Akihito; Kawano, Kenji

doi:10.1364/ecoc.2011.we.10.p1.40

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2016

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“…The pulse width and wavelength of the input optical short pulse in our experimental setup were 1.8 ps and 1546 nm, respectively. The pumping light wavelength was 1546 nm [13]. The gating width decrease with optical pumping pulse width and bias Voltage shown in Fig.…”

Section: Static Characteristicsmentioning

confidence: 99%

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Optical gating width variability using electrode parasitic capacitance

Yamada

Nagashima

Onuki

et al. 2016

IEICE Electron. Express

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Abstract:We developed an optical gating device using a bulk layer and high mesa ridge/BH hybrid structure with input power of 14.5 dBm for optical communication performance monitoring. The shortest gating width of 3.9 ps was obtained in all-optical sampling experiments. However, gated waveform distortion occurred due to superfluous carriers in absorption layer in case of low bias voltage and optical pumping power condition. We have successfully improved waveform quality by extension electric parasitic capacitance to draw out it, thus variable gating width depending on transmission speed has been realized.

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Section: Static Characteristicsmentioning

confidence: 99%

“…This structure, in which the BH region acts a thermal spreader, enables high power input, low transmission loss and polarization insensitivity [13]. The sampling system of variety transmission speed might be impacted by the gating width [14].…”

Section: Introductionmentioning

confidence: 99%