High-Luminance Thin Film Electroluminescent Devices Using Monoclinic Y2O3 Phosphor Activated with Mn

Minami, Tadatsugu; Kobayashi, Y.; Shirai, Tetsuya; Miyata, Toshihiro; Suzuki, Shingo

doi:10.1143/jjap.41.l478

Cited by 17 publications

(3 citation statements)

References 1 publication

Supporting

Mentioning

Contrasting

Order By: Relevance

“…High luminance blue 1, red 2–4, green 5–8, and yellow 9, 10 oxide phosphors, superior to the hygroscopic sulfides in terms of chemical stability, have been reported as efficient active layers of monochrome thin film electroluminescent (TFEL) displays. Even high luminance multicolor emitting TFEL devices have been fabricated using multi‐component oxide phosphor systems 11–15.…”

Section: Introductionmentioning

confidence: 99%

Electroluminescent characteristics of ZnGa₂O₄:Dy³⁺ thin film devices fabricated on glass substrates

Krishna

Anoop

Jayaraj

2012

Physica Status Solidi (a)

View full text Add to dashboard Cite

An alternating current thin film electroluminescent (ACTFEL) device was fabricated on commercial glass substrate with dysprosium doped zinc gallate as the active layer. The phosphor layer and the top dielectric layer were deposited using rf magnetron sputtering technique. The devices fabricated with an asymmetric double insulating structure gave a white electroluminescent (EL) emission when driven by a voltage pulse frequency of 1.5 kHz, even without post‐deposition annealing of the active layer. Such an emission resulted from the simultaneous occurrence of multicolor transitions, characteristic of the dopant ion. The exponential dependence of luminance on applied voltage was quite evident from the luminance–voltage (L–V) curves. Devices were also fabricated with a highly crystallized interfacial layer of ZnO in between the substrate and the phosphor layer. Such devices could withstand a wider range of applied voltage, henceforth resulting in enhanced device performance. The chromatic quality of the EL emissions from both the devices were gauged using chromaticity coordinates. The CIE coordinates of fabricated ZnGa2O4:Dy3+ ACTFEL devices (a) without and (b) with ZnO interfacial layer.

show abstract

Section: Introductionmentioning

confidence: 99%

Electroluminescent characteristics of ZnGa₂O₄:Dy³⁺ thin film devices fabricated on glass substrates

Krishna

Anoop

Jayaraj

2012

Physica Status Solidi (a)

View full text Add to dashboard Cite

show abstract

“…The sol-gel process is also a low cost process and is easily controllable. Sol-gel oxide phosphor (Ga 2 O 3 , Y 2 O 3 ) layers have been made by Minami et al [2][3][4]. ZnS films have been made by annealing of ZnO films in H 2 S by Kavanagh and Cameron [5] and recently a complete EL-device has been made with Ta 2 O 5 insulators by the same group [6].…”

Section: Introductionmentioning

confidence: 99%

Electrical properties of Al2O3 films for TFEL-devices made with sol–gel technology

et al. 2006

View full text Add to dashboard Cite

“…In addition, versatility of the device structure allows possible modifications of the fabrication process. For example, the green‐emitting Zn 2 GeO 4 :Mn phosphor microparticles could be replaced with other oxide EL phosphor microparticles to produce EL emissions in a variety of colors, for example, Ga 2 O 3 :Eu red oxide phosphor and Y 2 O 3 :Mn yellow phosphor are candidate materials that could be tested in our novel ZnO nanowire‐based EL devices.…”

mentioning

confidence: 99%

Alternating Current‐Driven Oxide Powder Electroluminescent Device Employing Vertically Aligned ZnO Nanowire Array

Tan

Kitai

2019

Physica Rapid Research Ltrs

View full text Add to dashboard Cite

A novel type of AC‐driven oxide powder electroluminescent (EL) device is demonstrated. The device is based on stable heterogeneous junctions between Mn2+‐activated zinc germanate (Zn2GeO4:Mn) oxide phosphor and a vertically aligned ZnO nanowire array. The ZnO nanowire array is synthesized on an ITO‐coated glass substrate via a hydrothermal growth method. A stable phosphor–nanowire junction is formed by simple drop‐coating of a Zn2GeO4:Mn oxide phosphor suspension on the nanowire layer followed by annealing at 400 °C for 3 h. Bright green light (≈20 cd m−2) with a wavelength of 535 nm from the as‐fabricated EL device is observed, and the as‐fabricated device shows excellent stability in air, maintaining a brightness of ≈10 cd m−2 for 15 days with less than 2.5% intensity loss. The electroluminescence emission mechanism is discussed in detail. This new and facile strategy to build an oxide powder EL device can enable cost‐effective, highly stable, and energy‐efficient devices for lighting or display applications.

show abstract

High-Luminance Thin Film Electroluminescent Devices Using Monoclinic Y2O3 Phosphor Activated with Mn

Cited by 17 publications

References 1 publication

Electroluminescent characteristics of ZnGa₂O₄:Dy³⁺ thin film devices fabricated on glass substrates

Electroluminescent characteristics of ZnGa₂O₄:Dy³⁺ thin film devices fabricated on glass substrates

Electrical properties of Al2O3 films for TFEL-devices made with sol–gel technology

Alternating Current‐Driven Oxide Powder Electroluminescent Device Employing Vertically Aligned ZnO Nanowire Array

Contact Info

Product

Resources

About

High-Luminance Thin Film Electroluminescent Devices Using Monoclinic Y2O3 Phosphor Activated with Mn

Cited by 17 publications

References 1 publication

Electroluminescent characteristics of ZnGa2O4:Dy3+ thin film devices fabricated on glass substrates

Electroluminescent characteristics of ZnGa2O4:Dy3+ thin film devices fabricated on glass substrates

Electrical properties of Al2O3 films for TFEL-devices made with sol–gel technology

Alternating Current‐Driven Oxide Powder Electroluminescent Device Employing Vertically Aligned ZnO Nanowire Array

Contact Info

Product

Resources

About

Electroluminescent characteristics of ZnGa₂O₄:Dy³⁺ thin film devices fabricated on glass substrates

Electroluminescent characteristics of ZnGa₂O₄:Dy³⁺ thin film devices fabricated on glass substrates