High-level information encryption based on optical nanomaterials with multi-mode luminescence and dual-mode reading

Abstract

High-level information encryption based on a visible up-conversion and invisible persistent luminescence material.

具有红色上转换发光和近红外二区发光的生物可降解镧系掺杂无机纳米颗粒用于生物成像和光动力治疗

“…Given the doping of Yb/Er, the NZF NPs showed a UCL dominated by a bright-red emission alongside a negligible green emission upon excitation with a 980-nm diode laser. The bright-red emission can be ascribed to the 4 F 9/2 to 4 I 15/2 transition of Er 3+ and the green to 2 H 11/2 , 4 S 3/2 to 4 I 15/2 [25]. The high-symmetry structure of the Na 3 ZrF 7 matrix is responsible for its high UCL red-to-green (R/G) intensity (~78.125 times), thereby yielding a bright-red color UCL light (Fig.…”

Multimode Dynamic Photoluminescence of Bi3+-Activated ZnGa2O4 for Optical Information Encryption

“…48 To investigate the regulatory effect of Bi 3+ on the luminescence of ZnGa 2 O 4 : Bi 3+ , the PL properties of ZnGa 2 O 4 : x% Bi 3+ samples were studied. Figure 2a 49,50 The red PL emission of V o * resulting from the transition of electrons from the V o * state to the ground state of O 2− ions was observed at 708 nm with an excitation peak located at ∼272 nm. 51 As shown in Figure 2c, with an increase in the Bi 3+ concentration in ZnGa 2 O 4 , PL intensity I 468 first decreased and then increased, while I 708 increased and reached its maximum upon doping with 1% Bi 3+ , which was then weakened at a higher Bi 3+ concentration.…”

“…Figure a displays the PL spectra of ZnGa 2 O 4 : x % Bi 3+ samples, and the PLE spectra of ZnGa 2 O 4 and ZnGa 2 O 4 : 2% Bi 3+ samples are compared in Figure b. The blue emission centered at ∼468 nm can be ascribed to the self-activation of Ga–O in the [GaO 6 ] octahedra in ZnGa 2 O 4 and the characteristic 3 P 1 → 1 S 0 transition of Bi 3+ ions in ZnGa 2 O 4 : x % Bi 3+ samples with their corresponding excitation peaks located at 250 and 253 nm, respectively. , The red PL emission of V o * resulting from the transition of electrons from the V o * state to the ground state of O 2– ions was observed at 708 nm with an excitation peak located at ∼272 nm . As shown in Figure c, with an increase in the Bi 3+ concentration in ZnGa 2 O 4 , PL intensity I 468 first decreased and then increased, while I 708 increased and reached its maximum upon doping with 1% Bi 3+ , which was then weakened at a higher Bi 3+ concentration.…”

Developing dual-mode material with ultraviolet and visible persistent luminescence for multi-mode anti-counterfeiting and information encryption

“…[24][25][26] UV light is invisible to human eyes, and this feature can be used to realize anti-counterfeiting and information encryption with high concealment. [27][28][29] In the previous work, we developed a Bi 3+ -doped UV PLM without visible PersL emission; the UV PersL cannot be seen by the human eye, but it can be detected using a charge coupled device (CCD) camera, which exhibits high concealment and security in advanced information encryption and anti-counterfeiting fields. 26 Compared with a single-doped UV PLM, a dual-mode PLM with UV and visible PersL could exhibit more excellent anti-counterfeiting and information encryption performance.…”