High k PVP titanium dioxide composite dielectric with low leakage current for thin film transistor

Water-based 2-dimensional anatase TiO2 inks for printed diodes and transistors

“…35 Our approach, based on NS, has the following advantages as compared to NPs: (i) synthesis of TiO 2 nanoparticles typically requires a temperature above 400 °C or thermal annealing; (ii) the NPs are often given by a mixture of different polymorphs or they are doped or mixed with other materials, such as polymers, which are typically used to achieve colloidal stability. 36,37 (iii) In the framework of a fully printed device made of 2D materials, it is expected that better contacts between the interfaces will be achieved if 2D materials are used for all device components as this will maxi-mize the van der Waals interactions between NS and minimizes the void fraction in the film. We formulate anatase TiO 2 -NS into inkjet printable formulations and exploit them in fully printed devices, such as transistors and diodes, with submicrometer dielectric thickness, showing the potential of anatase TiO 2 -NS inks in printed electronics.…”

A Review on the Progress of Optoelectronic Devices Based on TiO2 Thin Films and Nanomaterials

“…High-performance thin-film transistors (TFTs) have become a significant component of electronic devices. High dielectric materials facilitate the realization of low-voltage and high-performance thin-film transistors because of their large area capacitance and sender-type electron traps [ 48 ]. Compared to silicon-based thin-film transistors, titanium oxide has high transparency [ 49 ] in the visible range, high chemical stability [ 50 ], non-toxicity [ 51 ], and earth abundance [ 52 ].…”

“…TiO 2 has the advantage of being relatively inexpensive compared to other oxide dielectrics and is an excellent candidate for high-k applications. Yang et al successfully modified TiO 2 with polyvinylpyrrolidone (PVP) using the inorganic–organic composite media method to obtain TiO 2 :PVP mixed media [ 48 ]. The roughness, thickness, and band gap increased as the PVP concentration increased, the leakage current density decreased and then increased, and the area capacitance and relative dielectric constant ( k ) decreased.…”

All solution-processed hafnium rich hybrid dielectrics for hysteresis free metal-oxide thin-film transistors

“…[44][45][46][47] Recently, research has been focused to fabricate innovative hybrid dielectric materials with a variety of organic polymers This journal is © The Royal Society of Chemistry 2023 such as polymethyl methacrylate (PMMA), polyvinyl alcohol (PVA), polystyrene (PS), polyimide (PI) and polyvinyl phenol (PVP), which are combined with various high-k ceramic materials and have been tested mostly in organic thin-film transistors (OTFTs). [48][49][50][51][52] On the other hand, hybrid dielectric materials for fabrication of solution-based oxide TFTs have not been investigated sufficiently due to some restrictions. In our group, we have developed solution processes to achieve hybrid dielectric materials at low temperatures by combining the PMMA and PVP dielectric polymers with several high-k metal oxide dielectrics.…”