High-K gate dielectrics

Atomic Layer Deposition of Hafnium Dioxide Films from Hafnium Tetrakis(ethylmethylamide) and Water

“…[7] The maximum dielectric constant value for HfO 2 (30) may exceed that of ZrO 2 (25), [8] another prospective candidate for metal oxide semiconductor field effect transistor (MOSFET) gate oxides. [3] However, relatively low values (15.7 ± 0.5, measured at 100 kHz) of the dielectric constant have been reported for HfO 2 films.…”

A Simple Route to the Synthesis of Pr2O3 High‐k Thin Films

“…[17,18] Deposited Pr 2 O 3 films are potentially better than other high-k films due to the leakagecurrent densities [19] (< 10 ±8 A cm ±2 at gate voltage (V g ) = +1 V), 10 4 times lower than the observed values for HfO 2 and ZrO 2 films having the same equivalent oxide thickness of 1.4 nm. [20,21] Moreover, Osten et al [22] have reported on Pr 2 O 3 compatibility with conventional complementary metal oxide semiconductor (CMOS) processes, thus demonstrating that it is not necessary to re-engineer manufacturing procedures. A more versatile technique which has a greater throwing power could be a useful industrial alternative to more expensive technological routes for fabrication of Pr 2 O 3 thin films.…”

Interstitial oxygen induced Fermi level pinning in the Al2O3-based high-k MISFET with heavy-doped n-type poly-Si gates

“…Since the notable reduction of SiO 2 results in higher gate leakage current, alternative gate dielectrics, which have higher relative permittivity than SiO 2 (referred to as high-k dielectrics), have been investigated to avoid the large leakage current. Although a lot of materials such as silicon nitride (Si 3 N 4 ), 1-5 zirconium oxide (ZrO 2 ), 6 hafnium oxide (HfO 2 ), 7-9 aluminum oxide (Al 2 O 3 ) had been investigated, 10 HfO 2 is most being used as replacements for SiO 2 .…”