High-k dielectric oxides obtained by PLD as solution for gates dielectric in MOS devices

Filipescu, M.; Scarisoreanu, N.; Crăciun, V.; Mitu, B.; Purice, A.; Moldovan, A.; Ion, Valentin; Toma, Ovidiu; Dinescu, M.

doi:10.1016/j.apsusc.2007.02.166

Cited by 39 publications

(26 citation statements)

References 12 publications

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“…ZrO 2 is an important material, which possesses interesting properties such as large resistance against oxidation, high melting point (2,715 ∘ C), excellent thermal stability, and good ionic conductivity in the Y-stabilized cubic phase. For example, ZrO2 thin film is a promising candidate to replace silicon dioxide as the gate dielectric in complementary metal-oxidesemiconductor technology [5][6][7][8][9][10][11][12][13][14][15]. It is an electrical insulating material with a band gap of 5 eV and has potential use as an alternative material for storage capacitors in dynamic random access memories.…”

Section: Introductionmentioning

confidence: 99%

Determination of Optical Properties of Thin Films from Ketteler-Helmholtz Dispersion Relations: Application to the Case of Ultraviolet Irradiated Zirconium Oxide

Desforges

Robichaud

Gauvin

2017

Advances in Materials Science and Engineering

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A new method based on the Ketteler-Helmholtz dispersion relations is described. This method allows accurately determining the optical properties of thin films from a single transmittance curve. The case of zirconium oxide thin film postdeposition irradiated with ultraviolet light is analysed. The effect of ultraviolet irradiation is compared with low temperature postdeposition heating. It is shown that both processes have a comparable effect on the optical properties of the films. However, as our analysis leads to inferring that ultraviolet irradiation produces smoother film surfaces, the use of ultraviolet irradiation is an interesting alternative to the heating process. Accordingly, the reduction of light scattering from the interface with air provides films of better optical quality, which is especially valuable in case of multilayer systems.

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Section: Introductionmentioning

confidence: 99%

Determination of Optical Properties of Thin Films from Ketteler-Helmholtz Dispersion Relations: Application to the Case of Ultraviolet Irradiated Zirconium Oxide

Desforges

Robichaud

Gauvin

2017

Advances in Materials Science and Engineering

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“…3 In addition, ZrO2 thin films have been considered to replace SiO2 due to their high k dielectric property in the metal-oxide-semiconductor transistor. 4 These applications have led to various techniques to synthesize zirconium oxide thin films including direct current reactive magnetron sputtering, 5,6 chemical vapor deposition, 7,8 sol-gel techniques, 2,9 pulsed ion beam evaporation, 10 liquid phase deposition, 11 and filtered cathodic vacuum arc. 12 Radio frequency (RF) reactive magnetron sputtering is a widely used technique which is affected by several deposition conditions, such as the RF power, mixing ratio of plasma gas, and substrate temperature etc.…”

Section: Introductionmentioning

confidence: 99%

The Properties of RF Sputtered Zirconium Oxide Thin Films at Different Plasma Gas Ratio

Park¹,

Heo²,

Kang³

2010

Bulletin of the Korean Chemical Society

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Zirconium oxide thin films deposited on the p-type Si(100) substrates by radio-frequency (RF) reactive magnetron sputtering with different plasma gas ratios have been studied by using spectroscopic ellipsometry (SE), atomic force microscopy (AFM), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS). The deposition of the films was monitored by the oxygen gas ratio which has been increased from 0 to 80%. We found that the thickness and roughness of the zirconium oxide thin films are relatively constant. The XRD revealed that the deposited thin films have polycrystalline phases, Zr(101) and monoclinic ZrO2 (131). The XPS result showed that the oxidation states of zirconium suboxides were changed to zirconia form with increasing O2 gas ratio.

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“…The studies related to design and characterization of the MOS devices have been performed to its better performance since the last few decades [4][5][6]. Due to several possible sources of errors, the electrical characteristics of MOS capacitors deviate from expected ideal behavior.…”

Section: Introductionmentioning

confidence: 99%

Influences of Co-60 gamma-ray irradiation on electrical characteristics of Al2O3 MOS capacitors

Kaya

Yılmaz

2014

J Radioanal Nucl Chem

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Effects of gamma-ray irradiation on the electrical characteristics of Al 2 O 3 MOS capacitors such as barrier height, acceptor concentration, series resistance and interface state parameters have been studied by analyzing capacitance-voltage (C-V) and conductance-voltage (G/ x-V) measurements. The fabricated MOS capacitors were irradiated with gamma-rays at doses up to five grays. C-V and G/x-V measurements were recorded prior to and after irradiation at high frequency. The results show that the measured capacitance and conductance values decreased with increasing in irradiation dose and C-V and G/x curves has been shifted toward the negative voltages. Moreover, the series resistance (R s ) and density of interface states increased with increasing in irradiation dose and density of interface states (D it ) were calculated as order of 10 12 eV -1 cm -2 prior to and after irradiation. Due to presence and variations in the R s values, the corrected and the measured C-V and G/x-V exhibited different behaviors. Therefore other electrical characteristics were assessed from corrected C c characteristics. It was observed that acceptor concentration decreased with increasing in barrier height of device due to changes in interface states and diffusion potential.

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High-k dielectric oxides obtained by PLD as solution for gates dielectric in MOS devices

Cited by 39 publications

References 12 publications

Determination of Optical Properties of Thin Films from Ketteler-Helmholtz Dispersion Relations: Application to the Case of Ultraviolet Irradiated Zirconium Oxide

Determination of Optical Properties of Thin Films from Ketteler-Helmholtz Dispersion Relations: Application to the Case of Ultraviolet Irradiated Zirconium Oxide

The Properties of RF Sputtered Zirconium Oxide Thin Films at Different Plasma Gas Ratio

Influences of Co-60 gamma-ray irradiation on electrical characteristics of Al2O3 MOS capacitors

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