High-k dielectric materials for the gate oxide of a MIS capacitor: effect of interface states on the C–V characteristics

Hlali, Slah; Hizem, Neila; Kalboussi, Adel

doi:10.1007/s10825-016-0916-0

Cited by 16 publications

(8 citation statements)

References 28 publications

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“…Among the different insulating materials, Aluminum oxide (Al2O3) nanomaterial has been regarded as one of the most promising materials due to its fabricate potential that has low-cost, stable and flexible electronic devices [11,12]. Al2O3 has some interesting properties such as dielectric permeability (9), wide band gap (9 eV) [13], and its formation of uniform interface with semiconductors. These provide the reduction of leakage of currents in devices, kinetics and thermodynamic stabilities of the semiconductor at high-temperatures.…”

Section: Introductionmentioning

confidence: 99%

Investigation of the Frequency and Voltage Dependent Dielectric Properties of Au/n-SiC Metal Semiconductor (MS) and Au/Al2O3/n-SiC Metal-Insulator-Semiconductor (MIS) Structures

Demir

Yücedağ

Altındal³

2020

Sakarya University Journal of Science

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In this study, we investigated the fabrication of Au/n-SiC (MS) and Au/Al2O3/n-SiC (MIS) type structures with atomic layer deposition (ALD) technique and their dielectric properties. The dielectric characteristics of structures were analyzed at frequency range of 1 kHz-500 kHz and by applying a (-3V)-(9V) bias voltage at 300 K. The significant dielectric parameters such as dielectric constant (ε') and dielectric loss (ε"), real and imaginary parts of electrical modulus (M' and M"), loss tangent (tan) were calculated by depending on frequency and voltage from capacitance-voltage (C-V) and conductance-voltage (G/-V) data. Thereby, the effect of frequency on MS and MIS was searched in detail. The effect of the interface states occurred in the low frequency region can be attributed to the variation of the characteristic behavior of these parameters. It is clear that the dielectric parameters highly depend on the frequency and voltage at depletion and accumulation regions. Moreover, the peak position of M shifts to the left side of the graphic due to the effect of the insulating layer. It can be deduced from the obtained results that the interfacial polarization is easier at low frequencies. Also the interfacial polarization can contribute more to the variation of the dielectric properties.

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Section: Introductionmentioning

confidence: 99%

Investigation of the Frequency and Voltage Dependent Dielectric Properties of Au/n-SiC Metal Semiconductor (MS) and Au/Al2O3/n-SiC Metal-Insulator-Semiconductor (MIS) Structures

Demir

Yücedağ

Altındal³

2020

Sakarya University Journal of Science

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“…Under such conditions, quantum effects in the inverted channel of MOSFET become important and strongly influence the device behaviour and performance [7]. Modelling of MOS devices is usually performed using drift diffusion algorithms and much work about the classical model has been described in references [8,9]. Several commercial simulators based on such classical approach exist.…”

Section: Introductionmentioning

confidence: 99%

Electrical characteristics of metal–insulator–semiconductor and metal–insulator–semiconductor–insulator–metal capacitors under different high-k gate dielectrics investigated in the semi-classical and quantum mechanical models

2017

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In this paper the electrical characteristics of metal-insulator-semiconductor (MIS) and metalinsulator-semiconductor-insulator-metal (MISIM) capacitors with (100)-oriented p-type silicon as a substrate under different high-k gate dielectrics (SiO 2 , HfO 2 , La 2 O 3 and TiO 2) are investigated in the semi-classical and quantum mechanical models. We review the quantum correction in the inversion layer charge density for p-doped structures. The purpose of this paper is to point out the differences between the semi-classical and quantum mechanical charge descriptions at the insulator-semiconductor interface and the effect of the type of oxide and their position (gate oxide or buried oxide) in our structures. In particular, capacitance-voltage (C-V), relative position of the sub-band energies and their wavefunctions are studied to examine qualitatively and quantitatively the electron states and charging mechanisms in our devices. We find that parameters such as threshold voltage and device trans-conductance are enormously sensitive to the proper treatment of quantization effects.

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“…Modeling of MOS devices is usually performed by using drift diffusion algorithms, and much work on the classical model has been described in [4,5]. Several commercial simulators based on such classical approach exist.…”

Section: Introductionmentioning

confidence: 99%

Charge density at the Al-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=-/Si interface in Metal-Insulator-Semiconductor devices: semiclassical and quantum mechanical descriptions

Hlali

Hizem

Kalboussi

2017

Физика И Техника Полупроводников

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In this paper, a quantum correction computation of the inversion layer of charge density was investigated. This study is carried out for a one-dimensional Metal-Insulator-Semiconductor (MIS) structure with (100) oriented P-type silicon as substrate. The purpose of this paper is to point out the differences between the semiclassical and quantum-mechanical charge description at the interface Al 2 O 3 /Si, and to identify some electronic properties of our MIS device using different thickness of the high-k oxide and diverse temperature with different carrier statitics (Fermi-Dirak statitics and Boltzmann statitics). In particular, the calculations of capacitance voltage (C−V ), sheet electron density, a relative position of subband energies and their wave functions are performed to examine qualitatively and quantitatively the electron states and charging mechanisms in our device.

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High-k dielectric materials for the gate oxide of a MIS capacitor: effect of interface states on the C–V characteristics

Cited by 16 publications

References 28 publications

Investigation of the Frequency and Voltage Dependent Dielectric Properties of Au/n-SiC Metal Semiconductor (MS) and Au/Al2O3/n-SiC Metal-Insulator-Semiconductor (MIS) Structures

Investigation of the Frequency and Voltage Dependent Dielectric Properties of Au/n-SiC Metal Semiconductor (MS) and Au/Al2O3/n-SiC Metal-Insulator-Semiconductor (MIS) Structures

Electrical characteristics of metal–insulator–semiconductor and metal–insulator–semiconductor–insulator–metal capacitors under different high-k gate dielectrics investigated in the semi-classical and quantum mechanical models

Charge density at the Al-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=-/Si interface in Metal-Insulator-Semiconductor devices: semiclassical and quantum mechanical descriptions

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