High-k Dielectric Double Gate Junctionless (DG-JL) MOSFET for Ultra Low Power Applications- Analytical Model

Abstract

This paper describes the impression of low-k/high-k dielectric on the performance of Double Gate Junction less (DG-JL) MOSFET. An analytical model of the threshold voltage of DG-JLFET has been presented. Poisson's equation is solved using the parabolic approximation to find out the threshold voltage. The effect of high-k on various performance parameters of N-type DG-JLFET is explored. The comparative analysis has been carried out between conventional gate oxide, multi oxide and high-k oxide in terms of Drain Induced Barrier Lowering (DIBL), threshold voltage, figure of merit (ION/IOFF) and sub-threshold slope (SS). The high-k oxide has shown superlative performance as compared to others. The results are further analyzed for various device structures. The DG-JLFET with HfO2 exhibits excellent attainment by mitigating the Short Channel Effects (SCEs). The significant reduction in off current makes the device suitable for ultra-low power applications. There is a 61.9 % and 34.29% improvement in the figure of merit and sub-threshold slope in the proposed device as compared to other devices. The simulation of DG-JLFET is carried out using the Silvaco TCAD tool.

Performance Investigation of a Dielectric Stacked Triple Material Cylindrical Gate All Around MOSFET (DSTMCGAA) for Low Power Applications

“…The impact of fixed charges is neglected in the potential distribution. The potential by using Poisson 's equation can be represented as 7,13 ϕ ϕ ε…”

GaN-based low-power JLDG-MOSFETs: Effects of doping and gate work function

“…Since the gate electrodes on numerous sides of JLFETs with multiple gate topologies may quickly drain the whole silicon film, volume depletion is a simple process to do [ 7 ]. By reducing the SCEs, the DG-JLFET with hafnium oxide (HfO 2 ) demonstrates outstanding accomplishment [ 14 , 15 ]. The JLDG-MOSFET with high-k dielectric shows better I ON \I OFF , threshold voltage, and lowers the subthreshold swing compared to the conventional DG MOSFET [ 16 ].…”

“…[10] The DG-JLFET with HfO 2 exhibits excellent attainment by mitigating the Short Channel Effects (SCEs). [11] However, newer channel materials other than Si are being explored to enhance the JLFET's performance. GaN is one of the most attractive compound materials in low-power switching applications due to its wider bandgap of 3.4 eV, low effective electron mass (~ 0.18m o ), high-electron mobility (~ 1500 cm 2 V/s), and high-saturation velocity (~ 2.5 cm/s).…”

Metal-Induced Trap States: The Roles of Interface and Border Traps in HfO2/InGaAs

“…Hf-based high-k oxides (Hf-based ferroelectrics) have been identified as one of the most promising candidates in future microelectronic applications [ 1 , 2 , 3 , 4 , 5 , 6 , 7 ] due to their excellent compatibility with existing Complementary Metal Oxide Semiconductor (CMOS) processes [ 8 , 9 , 10 , 11 , 12 , 13 ]. The functional properties of HfO 2 depend critically on its defects: oxygen vacancies [ 14 ] or the metal/HfO 2 [ 15 ] and HfO 2 /substrate [ 3 ] interfaces.…”