High-Indium-Content InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes

A comparative analysis of the photoluminescence spectra of annealed ultrasmall In-rich InGaN/GaN quantum dots and wells

“…On annealing, initially the PL peak energy is lowered due to transformation of the as-grown trapezoidal well into a hyperbolic one due to relaxation of strain and intermixing of the third group elements. As annealing proceeds, due to further out diffusion of indium, the HQW broadens 9 and the energy band gap increases, resulting in blueshift of the PL peak energies, as illustrated in Fig. 7(b).…”

“…In spite of these problems the growth of ultrathin In-rich (UTIR) InXGa1−XN/GaN QWs having In composition of 60% -70% have been reported [8]. The growth of InXGa1-XN/GaN light emitting diodes (LED) structures with indium content of 70% in InGaN well was also reported by Chin et al [9]. During epitaxial growth and fabrication of InXGa1-XN/GaN QWs and QDs, the InXGa1-XN layers undergo several cycles of annealing, which causes 2 intermixing and redistribution of indium composition in these structures.…”

MOCVD of Nitrides

“…Much effort has been made to determine all the reaction paths and, as a result, the model for the dominant reactions in the vapor has developed stepwise on the basis of both experimental and theoretical results [31,32]. Visible long wavelength LEDs containing high-In-content InGaN, such as yellow, [37] amber, [38] and red [39,40] LEDs, are now being fabricated, which indicates that the vapor phase transport of In precursors can be controlled. Visible long wavelength LEDs containing high-In-content InGaN, such as yellow, [37] amber, [38] and red [39,40] LEDs, are now being fabricated, which indicates that the vapor phase transport of In precursors can be controlled.…”

Improvement of green LED by growing p-GaN on In0.25GaN/GaN MQWs at low temperature

“…In particular, the longwavelength emitting diodes, such as pure green, yellowish green, and yellow LEDs, are essential to complete a fullcolor display. AlGaInP alloys are already available and are extensively used for LEDs operating in the long-wavelength regions [2]. However, AlGaInP-based LEDs have a fatal problem in terms of their use as long-wavelength emitting diodes because the optical output power would be dramatically reduced by operating temperatures in the range 0-40 1C [3].…”