High-κ dielectric ε-Ga₂O₃ stabilized in a transparent heteroepitaxial structure grown by mist CVD at atmospheric pressure

Abstract

The dielectric constant of metastable ε-Ga2O3 was evaluated for the first time by using a transparent heteroepitaxial structure of ε-Ga2O3/indium tin oxide/yttria-stabilized zirconia.

Epitaxial Growth of κ‐(AlxGa1−x)2O3 Layers and Superlattice Heterostructures up to x = 0.48 on Highly Conductive Al‐Doped ZnO Thin‐Film Templates by Pulsed Laser Deposition

“…This might be due to the fact that the alloy typically grows relaxed for the thicknesses investigated here, [ 24,26 ] such that only the first few nm should be affected by the lattice mismatch or a thin interfacial layer in a different phase not detectable by XRD compensates the mismatch as was already observed before on other substrates. [ 36,62,63 ] However, the mismatch is still lower than for ITO as alternative back contact layer for κ ‐phase thin films (−15.9% in a ‐ and 12.7% in b ‐direction [ 46 ] ). Further, κ ‐phase layers on ITO typically show an inferior crystalline quality compared with layers grown on c‐sapphire.…”

“…Further, κ ‐phase layers on ITO typically show an inferior crystalline quality compared with layers grown on c‐sapphire. [ 46 ] ZnO therefore seems to be the more suitable choice as back contact.…”

“… can be grown heteroepitaxially by several deposition methods, such as pulsed‐laser deposition [ 14,19–26 ] (PLD), halide vapor phase epitaxy [ 18,27–29 ] (HVPE), metal‐organic chemical vapor deposition [ 17,30–35 ] (MOCVD), metal‐organic vapor phase epitaxy [ 36–39 ] (MOVPE), atomic layer deposition, [ 31 ] molecular beam epitaxy [ 40 ] (MBE), plasma‐assisted molecular beam epitaxy [ 41 ] (PAMBE), and mist CVD. [ 15,16,42–49 ]…”

“…Recent reports showed the possibility of growing with sufficient crystalline quality on highly conductive heavily Sn‐doped (111) (ITO) templates. [ 46,47 ] However, no articles so far reported on the growth of on back contact layers and the lattice mismatch of to ITO is quite large (−15.9% in a ‐ and 12.7% in b ‐direction [ 46 ] ). Depending on the growth temperature, unintentional Sn diffusion and doping of the layer might further be an issue.…”

CuO-Ga2O3 Thin Films as a Gas-Sensitive Material for Acetone Detection

“…Moreover, the Ga 2 O 3 has found a wide range of applications in various disciplines. Thin layers of gallium oxides have been used in solar cells as an ultrathin tunneling layer in the dye-sensitized solar cell, as well as in passivation layers on silicon solar cells, photodetectors [68,69], and electronic devices [70]. Also, a lot of reported works have focused on gas-sensing behaviors based on this metal oxide, as well as its doped-Ga 2 O 3 composite (i.e., Sn [71], Ce, Sb, W, Zn [72,73], Sn, Cu, N [74], Au [75]) and metal oxide/Ga 2 O 3 composite (i.e., TiO 2 [76], SiO 2 [77], SnO 2 [78], I 2 O 3 WO 3 [79,80], ZnO [81], MgO [82]).…”