2009
DOI: 10.1021/cr9001275
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High-k Organic, Inorganic, and Hybrid Dielectrics for Low-Voltage Organic Field-Effect Transistors

Abstract: Rocı ´o Ponce Ortiz was born in Marbella (Spain) in 1980. She studied at the University of Malaga where she obtained her degree in Chemical Engineering in 2003 and a Ph.D. in Chemistry in 2008 working on vibrational spectroscopy, electrochemistry, and quantum-chemical calculations of oligothiophene derivatives in Prof. Lo ´pez Navarrete's group. In 2008, she joined Prof. Tobin J. Marks' group at Northwestern University as a postdoctoral researcher. Dr. Ponce Ortiz has published 25 research articles. Her curren… Show more

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Cited by 816 publications
(630 citation statements)
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“…It is known that the operating voltage of OFETs can be reduced by decreasing the thickness or increasing permittivity of gate dielectrics 17. To date, dielectric materials including self‐assembled monolayers, thin cross‐linked polymers, and high‐ k metal oxides have been employed to reduce the operating voltages of OFETs 25, 26. Nevertheless, these thin organic dielectrics or high permittivity inorganic dielectrics are usually fragile for flexible devices, resulting in the increased gate leakage current and charge trapping at the semiconductor/dielectric interface 27, 28.…”
Section: Introductionmentioning
confidence: 99%
See 1 more Smart Citation
“…It is known that the operating voltage of OFETs can be reduced by decreasing the thickness or increasing permittivity of gate dielectrics 17. To date, dielectric materials including self‐assembled monolayers, thin cross‐linked polymers, and high‐ k metal oxides have been employed to reduce the operating voltages of OFETs 25, 26. Nevertheless, these thin organic dielectrics or high permittivity inorganic dielectrics are usually fragile for flexible devices, resulting in the increased gate leakage current and charge trapping at the semiconductor/dielectric interface 27, 28.…”
Section: Introductionmentioning
confidence: 99%
“…Nevertheless, these thin organic dielectrics or high permittivity inorganic dielectrics are usually fragile for flexible devices, resulting in the increased gate leakage current and charge trapping at the semiconductor/dielectric interface 27, 28. Meanwhile, their relatively harsh and complicated fabrication processes prevent large‐scale manufacture of flexible OFETs 25. Recently, incorporation of thick polyelectrolytes as dielectrics was demonstrated to be an alternative method to fulfill high capacitance and thus low‐voltage operation of OFETs 28, 29, 30.…”
Section: Introductionmentioning
confidence: 99%
“…Organic thin-film transistors (OTFTs) have been an important research subject because they are indispensable elements in the development of low-cost, large-area electronics, such as paper-based displays, smart cards, radio-frequency ID tags, and sensors [1][2][3][4][5][6][7][8]. Among the fundamental components of OTFTs, namely the semiconductor, dielectric, and conductor, studies on the development and application of organic semiconducting materials have intensively been performed for the last few decades [9][10][11][12][13][14][15][16][17][18].…”
Section: Introductionmentioning
confidence: 99%
“…The dielectric constant of these inorganic conventional semiconductors is found to be 11. This large amount of dielectric constant creates a dielectric screening and hence the Coulomb attraction between the electrons and holes are unimportant due to this screening effect [9]. In this way, we can say that the OS are basically insulators in the conventional sense and for semiconducting them, the charge carrier should be created by any method.…”
Section: Introductionmentioning
confidence: 99%