High growth rates of AlN and AlGaN on 8″ silicon wafer using metal‐organic vapor phase epitaxy reactor

Abstract

We have developed a large‐scale metal‐organic vapor phase epitaxy (MOVPE) reactor. The growth rates of AlN and AlGaN were compared with those calculated using the parasitic chemical reaction model. The calculated results were in good agreement with the experimental results over the entire 8″ wafer. To experimentally investigate the extent of the gas‐phase prereaction between the precursors and ammonia, the results of epitaxy were compared with those for a 6″‐type reactor. The growth of AlN and AlGaN at relatively high rates without any significant gas‐phase prereaction was demonstrated. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Fast Growth of Smooth AlN in a 3 × 2″ Showerhead‐Type Vertical Flow MOVPE Reactor

“…Initially, the AlN growth rate as a function of TMAl flow rate was studied to determine possible limits of efficiently utilizing precursors in our vertical flow 3 × 2″ MOVPE reactor. It was found (Figure , curve 1) that up to six times higher than our standard flow rate (360 sccm min −1 ≈ 280 μmol min −1 ) results in a proportionally faster growth rate (up to ≈7.8 μm h −1 ) confirming that the TMAl‐NH 3 pre‐reaction reported to happen during AlN growth is still marginal in this regime. Then AlN surface morphology was considered for the different growth rates (Figure ).…”

Impact of the AlN nucleation layer on the variation of the vertical-direction breakdown voltage of AlGaN/GaN high-electron-mobility transistor structures on a Si substrate

“…All of the samples used in this study were grown on 200‐mm‐diameter p‐type 1‐mm‐thick Si substrates using a metalorganic chemical vapor deposition (MOCVD) system (UR26 K, Taiyo Nippon Sanso Corp., 200 mm × 6 wafers) . Hydrogen and nitrogen were used as carrier gases.…”

Review—Review of Research on AlGaN MOCVD Growth

“…Similar study results were obtained by Lundin et al and Touzi et al 53,43 Furthermore, Lundin et al also found that although the Al component decreased with the rise of III-nitride, the rate of decrease in the high ammonia atmosphere was significantly faster than that in the low. In addition, as the ratio of the III-nitride flow rate rose in the total gas, the growth rate also grews, 26,47,49,55,56 thus it was difficult to achieve rapid growth of the AlGaN layer and obtain a high Al component simultaneously by adjusting the III-nitride flow rate.…”

“…However, when the ammonia content is high, the strong parasitic reaction enhances the gas-phase scavenging effect of the Al source on the Ga source and the etching effect of H 2 on GaN by NH 3 decomposition, 17,[70][71][72] eventually resulting in the consumption of the source gas. 47 Bao et al 73 and Lundin et al 52 studied the effect of carrier gas H 2 on the growth of AlGaN, and found that the growth rate and the Al component in the layer increased with the rise of carrier gas flow rate, and then they tended to be saturate at high flow rate. In conclusion, increasing the gas flow rate was favorable for suppressing the parasitic reaction and raising the growth rate.…”

“…In conclusion, increasing the gas flow rate was favorable for suppressing the parasitic reaction and raising the growth rate. 44 Taiyo Nippon Sanso UR25K 1040 75 2.4 Liu et al 45 CCS 1100 76 1.6 Ubukata et al 46 Taiyo Nippon Sanso UR25K 1080 97.5 1.4 Kato et al 34 Horizontal (face-down substrate) 1286 100 20 Ubukata et al 47 Taiyo Nippon Sanso UR26K 1050 122.5 11.1 Ikenaga et al 26 Taiyo Nippon Sanso SR4000HT 1110 150 7.2 Alerman et al 48 EMCORE D-125 1050 300 1.6 Tokunaga et al 49 Taiyo Nippon Sanso SR23K not applied 760 1.2 . 74 The gas phase chemical reaction is more complicated for the growth of AlGaN due to the interactions between Al-and Gacontaining intermediate species in the gas phase or on the surface.…”