High growth rate GaN on 200 mm silicon by metal-organic vapor phase epitaxy for high electron mobility transistors

Simple and Accurate Prediction of AlGaN Metal‐Organic Vapor Phase Epitaxy Growth

“…For the following calculations, we assume that the etch rates will be the same for all AlGaN compositions. This is not going to be completely true, as for GaN we have previously found an etch rate of 0.6 μm h −1 (0.16 nm s −1 ) at a growth temperature of 1035 °C, which is much higher than the value of 0.06 nm s −1 found here for the AlGaN. It would be expected that the etch rate would be lower for higher Al compositions, as AlN is more stable than GaN at high temperatures .…”

“…As has been previously noted in studies of GaN, an etching, or desorption, occurs during the growth step, which is in competition with the layer growth due to the high temperatures used for GaN epitaxy. To assess this effect for our AlGaN layers, we grew five samples at various temperatures keeping all other parameters constant, and the resulting thickness and composition of the layers are shown in Figure .…”

Thermoelectric Properties of n-type GaN and 2D Electron Gas in AlGaN-GaN Heterostructure

“…More details of the growth and crystal quality can be found. 12,13 For the n-type GaN layer, a silicon doped GaN layer 1100 nm thick, with a doping level of 5 9 10 18 cm À3 was grown on top of the carbon doped GaN, as shown Fig. 1a.…”

Extraction of stress and dislocation density using in-situ curvature measurements for AlGaN and GaN on silicon growth

“…The AlGaN layers were grown with a high growth rate of 3.8µm/hr to incorporate a high density of carbon while the GaN was composed of two parts. The first layer of 1.8µm of GaN[C] was grown at high growth rate to give incorporate a high density of carbon concentration [7], and a "channel" layer of 200 nm with a lower carbon level in order to allow the generation of a 2-dimensional electron gas at the interface between the AlGaN and the GaN. The barrier layer of AlGaN is a typical structure used for fabrication of high power GaN based devices [8].…”