High Growth Rate Deposition of Hydrogenated Amorphous Silicon-Germanium Films and Devices Using ECR-PECVD

Liu, Yong

doi:10.2172/803355

Cited by 5 publications

(5 citation statements)

References 45 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…(1) Chemical annealed a-SiGe:H films prepared by H (plus He) plasma will be made. Previous studies in our group show the necessity for having both H and He or Ar present to prepare good films [21]. In the meantime, the non-chemical annealed a-…”

Section: Scope Of Researchmentioning

confidence: 89%

Properties of Amorphous Silicon Germanium Films and Devices Prepared Using Chemical Annealing

Zhao

View full text Add to dashboard Cite

Section: Scope Of Researchmentioning

confidence: 89%

Properties of Amorphous Silicon Germanium Films and Devices Prepared Using Chemical Annealing

Zhao

View full text Add to dashboard Cite

“…Previous studies in our group show the necessity for having both H and He or Ar present to prepare good films [40]. The inert He or Ar is supposed to provide heavy ion impinging to break the weak Si-H as well as provide the momentum to the SiH 3 radicals, and the H plays the role to take the broken H bond away.…”

Section: Scope Of Researchmentioning

confidence: 99%

“…The deposition system used in this research is electron cyclotron resonance plasma enhanced chemical vapor deposition system (ECR-PECVD) [40]. Figure 2.1 Schematic view of ECR-PECVD system [40].…”

Section: Chapter 2 Sample Preparation 21 Ecr Pecvd Systemmentioning

confidence: 99%

Improving the stability of amorphous silicon solar cells by chemical annealing

Wang

View full text Add to dashboard Cite

The quality of this reproduction is dependent upon the quality of the copy submitted. Broken or indistinct print, colored or poor quality illustrations and photographs, print bleed-through, substandard margins, and improper alignment can adversely affect reproduction. In the unlikely event that the author did not send a complete manuscript and there are missing pages, these will be noted. Also, if unauthorized copyright material had to be removed, a note will indicate the deletion.

show abstract

“…ECR plasmas are ubiquitous in semiconductor manufacturing today, and as a result have been described and discussed repeatedly in literature [17][18][19][20][21][22][23], and will only briefly be discussed here. The ECR condition is predicted by Maxwell's equations and is caused by microwave radiation being directed perpendicular to a static magnetic field.…”

Section: Electron Cyclotron Resonance Plasmasmentioning

confidence: 99%

Growth and characterization of hydrogenated amorphous silicon prepared using a combined hot wire and electron cyclotron resonance plasma deposition technique

Ring¹

View full text Add to dashboard Cite

Hot Wire Chemical Vapor Deposition (HWCVD) is an emerging technology in semiconductor materials thin film deposition due to the high growth rates and reasonable electronic properties attainable using this method. To improve the electronic characteristics of material grown by the HWCVD method, neutral ion bombardment during growth was introduced as it is shown to be beneficial in Plasma Enhanced Chemical Vapor Deposition (PECVD). Neutral ion bombardment was accomplished by using remote Electron Cyclotron Resonance (ECR) plasma and the entire deposition technique is termed ECR-HWCVD. The ECR-HWCVD films were compared to HWCVD materials deposited without ion bombardment grown at similar conditions in the same reactor using a 10.5 cm filament to substrate distance to minimize substrate heating by radiation during deposition. The growth rate is halved when ion bombardment is added to HWCVD, however it remains four times greater than the highest quality ECR-PECVD films. Also, ECR-HWCVD material exhibited better electronic properties as shown by Urbach energy, photosensitivity, hydrogen content, microstructure parameters, and space charge limited current defect measurements. In addition, the effect of substrate temperature on hydrogen content and material microstructure was investigated. Both hydrogen content and the microstructure parameter R decreased as substrate temperature increased; and when ion bombardment was added to the deposition conditions, the microstructure parameter decreased regardless of substrate temperature.

show abstract

High Growth Rate Deposition of Hydrogenated Amorphous Silicon-Germanium Films and Devices Using ECR-PECVD

Cited by 5 publications

References 45 publications

Properties of Amorphous Silicon Germanium Films and Devices Prepared Using Chemical Annealing

Properties of Amorphous Silicon Germanium Films and Devices Prepared Using Chemical Annealing

Improving the stability of amorphous silicon solar cells by chemical annealing

Growth and characterization of hydrogenated amorphous silicon prepared using a combined hot wire and electron cyclotron resonance plasma deposition technique

Contact Info

Product

Resources

About