High growth enhancement factor in arrayed waveguide by MOVPE selective area growth

Moriguchi, Yusuke; Kihara, Tatsuya; Shimomura, Koichiro

doi:10.1016/s0022-0248(02)01825-0

Cited by 16 publications

(6 citation statements)

References 2 publications

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“…Selective MOVPE growth was performed in a vertical reactor at a growth pressure of 100 Torr and a temperature of 640 1C, representing optimized conditions identified in the previous work [8]. The total H 2 carrier gas flow rate was 6 slm.…”

Section: Methodsmentioning

confidence: 99%

“…We recently reported the fabrication of a simple wavelength demultiplexer using arrayed GaInAs/ InP MQW-based waveguides by selective MOVPE growth to form a variable waveguide thickness across the array [5][6][7][8]. To further improve the demultiplexing characteristics, it is necessary to increase the number of arrayed waveguides, and reduce the spacing between adjacent arrayed waveguides.…”

Section: Introductionmentioning

confidence: 99%

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Selective MOVPE growth of tilted arrayed waveguides from [0 1 1] direction

Kawakita

Kawai

Shimotaya

et al. 2004

Journal of Crystal Growth

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Selective MOVPE growth of tilted arrayed waveguides from [0 1 1] direction

Kawakita

Kawai

Shimotaya

et al. 2004

Journal of Crystal Growth

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“…When using a butt-joint regrowth technique, a growth rate enhancement (GRE) occurs due to the presence of a dielectric mask pattern during selective area epitaxy [19]. It locally increases the thickness of the regrown layers and modifies their material composition [20].…”

Section: Introductionmentioning

confidence: 99%

High Density Integration of Semiconductor Optical Amplifiers in InP Generic Photonic Integration Technology

Lemaître

Kleijn²,

Millan-Mejia³

et al. 2022

IEEE J. Select. Topics Quantum Electron.

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We present experimental studies of semiconductor optical amplifiers with a high integration density in an InP generic photonic integration platform. We study the activepassive butt-joint integration of dense arrays of active islands with widths ranging from 2 to 30 µm, and pitches ranging from 4 to 270 µm. We show that reducing the active island width from 20 µm to 4 µm enables a decrease of pitch by almost 4 times while keeping a similar growth rate enhancement (GRE) in between the active islands. The impact of narrow active islands on amplifier performance is also studied with an array of Fabry-Pérot lasers fabricated in a commercial generic platform. We demonstrate the manufacturability of lasers with a pitch of 25µm and evaluate individual device performance. Threshold currents and slope efficiencies are not impaired with narrow active island down to 6 µm, with values of 19-26 mA and 0.08-0.15 W/A respectively.

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“…Fig.1 show schematic design of the wavelength selective switch which consists of input waveguide, two identical star coupler, arrayed waveguides, and output waveguides. The arrayed waveguides was fabricated by selective metal-organic vapor phase epitaxy (MOVPE) growth using the asymmetric SiO 2 mask pattern on both sides of the array [5,6]. In addition, the input waveguide, the star coupler, and the output waveguides also were fabricated by selective MOVPE grwoth.…”

Section: Introductionmentioning

confidence: 99%

Switching characteristics in variable index arrayed waveguide wavelength selective switch

Murakami

Sugio

et al. 2009

2009 14th OptoElectronics and Communications Conference

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Four wavelength switching was successfully demonstrated in the wavelength selective switch using GaInAs/InP MQW variable index arrayed waveguide by thermo-optic (TO) effect. Four wavelength lights were switched and demultiplexed between the four output ports. IntroductionIn WDM networks, key components are the wavelength multi-/demultiplexers, which combine/separate wavelength channels. Various kind of demultiplexing principles have been proposed and already commercially available, such as arrayed-waveguide gratings (AWG). In the latest paper, a novel wavelength demultiplexer using a GaInAs/InP multiple quantum well (MQW) arrayed waveguide has been proposed in which refractive index varies linearly across the array [1,2]. The conventional AWGs are designed so that phase differences between adjacent waveguides are obtained by gradually varying waveguide length. In the proposed design, however, phase differences between adjacent waveguides are achieved by varying the waveguide thickness which is the refractive indices of the waveguides. Therefore, it is possible to be realized a straight waveguide type wavelength demultiplexer [2]. Furthermore, the device could be applied to wavelength selective switch since the refractive indices of the waveguides in the array can be controlled dynamically by TO effect or QCSE [3,4]. In this report, we show the successful wavelength switching in the wavelength selective switch with linearly varying refractive index arrayed waveguide by controlling the refractive index using TO effect.

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High growth enhancement factor in arrayed waveguide by MOVPE selective area growth

Cited by 16 publications

References 2 publications

Selective MOVPE growth of tilted arrayed waveguides from [0 1 1] direction

Selective MOVPE growth of tilted arrayed waveguides from [0 1 1] direction

High Density Integration of Semiconductor Optical Amplifiers in InP Generic Photonic Integration Technology

Switching characteristics in variable index arrayed waveguide wavelength selective switch

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