High gamma dose response of the electrical properties of polyethylene terephthalate thin films

Mariatti

Polymer Engineering & Sci

et al. 2017

In this study, thermoplastic elastomer nanocomposites based on linear low density polyethylene (LLDPE)/silicone rubber (SR; 90:10) filled with a 2 vol% boron nitride (BN) nanofiller were exposed to electron beam (EB) irradiation at low irradiation doses (20, 40, 50, and 100 kGy). The response of the LLDPE/SR/BN nanocomposites to the EB irradiation crosslinking was examined and compared with the non‐irradiated samples in terms of dielectric properties (permittivity and loss tangent), dielectric breakdown strength, morphology, and rheological properties. A swelling study was performed to quantify the degree of crosslinking and it was found that the crosslink density increased slightly upon EB irradiation. Scanning electron microscopy results provided evidence that the SR phase was selectively crosslinked and interfacial adhesion was improved in irradiated samples. A good correlation was observed between the morphology and the dynamic storage modulus obtained from the melt rheological experiments. The optimum irradiation dose was found to be 20 kGy, which was marked by an improved dielectric breakdown strength, a permittivity‐frequency curve plateau and a reduced loss tangent value. POLYM. ENG. SCI., 58:E135–E144, 2018. © 2017 Society of Plastics Engineers

Section: Permittivity and Loss Tangentmentioning

confidence: 99%

Effect of electron beam irradiation on dielectric properties, morphology and melt rheology of linear low density polyethylene/silicone rubber‐based thermoplastic elastomer nanocomposites

Mariatti

Polymer Engineering & Sci

et al. 2017

International Journal of Polymer Analysis and Characterization

“…[12] Therefore, an increase in the free charge carriers occurred due to this scission, which increased the DC current. [12] Therefore, an increase in the free charge carriers occurred due to this scission, which increased the DC current.…”

Section: Influence Of Gamma Radiation On Petmentioning

confidence: 99%

Influence of Gamma Radiation on Electrical Conduction of Polyethylene Terephthalate (PET) at Ambient Temperature

Belkahla

Saidi-Amroun

Saïdi

et al. 2013

The electrical conduction in polyethylene terephthalate (PET) exposed to a gamma radiation dose of 150 kGy was investigated in the applied field range from 4 to 36 kV=mm. Samples were irradiated in air at room temperature by means of a 60 Co gamma source at a dose rate of approximately 42 Gy=min. The electrical properties of virgin and irradiated materials were examined by charging and discharging current measurements. The current decays with time can be represented according to an inverse power law. The changes of dielectric behavior after irradiation were attributed to scission effects.

“…Because these devices communicate with each other via metal /semiconductor (MS) contacts [12]. Determining the effects of radiation on devices and producing radiation-resistant devices has been an important research topic recently [13,14].…”

Section: Introductionmentioning

confidence: 99%

Electron irradiation degradation on Silicon Schottky diode interface

Uğurel

Aydoğan

2023

Preprint

Au/n-Si/Au-Sb Schottky diode was fabricated, and electron irradiation was applied to the diode at 25 gray and 50 gray doses. The effects of irradiation on the electrical characteristics of the 450 oC annealed diode were analyzed by means of current-voltage (I-V), capacitance-voltage (C-V), conductance-voltage (G-V) and capacitance-frequency (C-f) measurements before and after irradiation. With increasing irradiation, changes were observed in the ideality factor, barrier height, series resistance, dielectric constant and diffusion potential values depending on the dose used. The n value was found to be 1.231, 1.306, and 1.350 before irradiation, after 25-gray, and after 50-gray irradiation, respectively. The Φb before irradiation was 0.742 eV. Depending on 25 and 50 gray irradiations, it was calculated as 0.768 eV and 0.761 eV, respectively. In addition, there was a decrease in leakage current by irradiation. Depending on the increasing dose, while the capacitance and donor concentration of the diode decreased, there was an increase in the diffusion potential and Fermi energy level. It has been observed that the diode deviates from ideality due to defects in the diode interface depending on irradiation. It has been observed that electron irradiation causes changes in the electrical properties of the Au/n-Si/Au-Sb Schottky diode.