High‐gain wide‐bandwidth low noise amplifier multi‐chip waveguide module at V‐band

Abstract

A low‐noise, high‐gain, wide‐bandwidth multi‐chip module has been developed at V‐Band with WR‐15 waveguide interface using commercial‐off‐the‐shelf (COTS) Low Noise Amplifier (LNA) Monolithic Millimeter‐wave Integrated Circuits (MMICs). Waveguide module design ensures there is minimal impact on noise figure and gain of MMICs due to integration on the module and it is rugged to sustain impact of fabrication/assembly tolerances. The realized six‐stage LNA module has small‐signal gain of 32–35 dB and room temperature noise figure ranging from 2.2 to 4.4 dB in 50–60 GHz frequency band. The module design has been simulated using 3D electromagnetic solver ‐ High Frequency Structure Simulator (HFSS). © 2016 Wiley Periodicals, Inc. Microwave Opt Technol Lett 59:380–384, 2017

Ku‐band GaAs mHEMT MMIC and RF front‐end module for space applications

“…10 Furthermore, shunt capacitors (C g1 , C d1 , C g2 , and C d2 ) were utilized near the choke inductors to filter the unwanted oscillation phenomena on the DC bias lines. 10 MMIC LNA was designed and simulated in ADS Momentum simulator. Simulated stability results are given in Figure 3.…”

“…Moreover, the transistors were matched to the Γ opt to achieve the minimum NF. Furthermore, DC biases were supplied on a choke inductor ( L g1 , L g2 , L g3 , and L g4 ) to decouple the high frequency transmission to the DC bias line and the serially connected capacitors (C 1 and C 2 ) were utilized in the input and output ports to prevent the external DC bypass capacitor usage in the module level 10 . Furthermore, shunt capacitors (C g1 , C d1 , C g2 , and C d2 ) were utilized near the choke inductors to filter the unwanted oscillation phenomena on the DC bias lines 10 .…”

Broadband flip‐suspended‐microstrip transition for millimeter‐wave MMIC package

“…The research of waveguide probes and bonding wires have been extensively reported. [2][3][4][5][6][7][8] However, as operating frequencies increase, bonding wires will cause considerable loss due to the parasitic inductance. 9 Although this effect can be reduced by using multiple wires or shortening the wires, it is difficulty to apply them to sub-millimeter wave and terahertz devices due to the small circuit dimension.…”

“…At present, waveguides are widely used due to its low transmission loss, and a popular packaging technology to achieve MMIC‐to‐waveguide transition is based on waveguide probe and wire‐bonding technologies. The research of waveguide probes and bonding wires have been extensively reported 2–8 . However, as operating frequencies increase, bonding wires will cause considerable loss due to the parasitic inductance 9 .…”