High-Gain SiC MESFETs Using Source-Connected Field Plates

Ultra-Wideband GaN Power Amplifiers – From Innovative Technology to Standart Products

“…In particular, in GaAs MESFET transistor (Balzan et al, 2008) the capacity Cgd decreased by 43%, while the F t increased by 16%. In the SiC MESFET (Sriram et al, 2009) Cgd decreased by 45% and MSG increased by 2, 7 dB. The growth of output power density also leads to an increase of the heat dissipation on the unit of the area of transistor's active structure.…”

Spectral Thermal Spreading Resistance of Wide Bandgap Semiconductors in Ballistic-Diffusive Regime

“…Wide bandgap (WBG) semiconductor devices such as GaN high electron mobility transistors (HEMTs) [1], [2], SiC metalsemiconductor field-effect transistors (MESFETs) [3], [4] and recently burgeoning AlN and β-Ga 2 O 3 based ultra-WBG (UWBG) devices [5]- [7] are extremely attractive for highpower and high-frequency electronic applications, due to the high breakdown voltage led by the wide bandgap. However, owing to their superhigh power density, they usually hold very high junction temperatures and the significant overheating within the devices largely restricts their actual performance [8]- [10] and shortens the device lifetime [11].…”

Recessed p-buffer layer SiC MESFET: A novel device for improving DC and RF characteristics

“…The main drawback in using SiC for microwave devices lies in its poor low field electron mobility of 300-500 cm 2 /V s, at doping levels of interest for MESFETs in the range of 1-5 Â 10 17 cm À 3 . This drawback results in a larger source resistance and lower trans-conductance compared to GaAs based MESFETs [3][4][5][6][7][8].…”