High gain resonant cavity enhanced InGaAs/AlGaAs heterojunction phototransistor resonant at 930 nm

Sjolund, O.; Ghisoni, M.; Larsson, Anders

doi:10.1049/el:19950602

Cited by 9 publications

(10 citation statements)

References 5 publications

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“…The positions of dips and peaks in the transmission spectra are consistent with the optical design of this structure. 10 A peak in transmission at ϭ935 nm at Tϭ300 K agrees with the designed resonant wavelength of 940 nm for device operation. 10 The resonant cavity will have differing effects on the spectral line shape of light which is collected in the CL and transmission measurements ͑Figs.…”

Section: A CL Spectroscopy and Imaging Of Excitonic Transitions As Asupporting

confidence: 67%

“…10 A peak in transmission at ϭ935 nm at Tϭ300 K agrees with the designed resonant wavelength of 940 nm for device operation. 10 The resonant cavity will have differing effects on the spectral line shape of light which is collected in the CL and transmission measurements ͑Figs. 2 and 4, respectively͒, owing to large differences in the source geometry and solid angle of collection in these two experiments.…”

Section: A CL Spectroscopy and Imaging Of Excitonic Transitions As Asupporting

confidence: 67%

“…10 The sample growth was initiated by an n ϩ -GaAs ͑3ϫ10 18 cm Ϫ3 ͒ buffer layer, after which a high reflectivity n ϩ -AlAs/GaAs ͑3ϫ10 18 cm Ϫ3 ͒ quarter-wave stack ͑14.5 pairs; center wavelength corresponding approximately to the absorption peak of 80 Å In 0.12 Ga 0.88 As/GaAs QWs͒ was grown. Next, a 3940 Å n ϩ -GaAs subcollector ͑3ϫ10 18 cm Ϫ3 ͒ and a 4410 Å InGaAs/GaAs MQW collector ͑5ϫ10 16 cm Ϫ3 ͒ were grown.…”

Section: Methodsmentioning

confidence: 99%

“…The absorption efficiency and photosensitivity can also be enhanced by incorporating a resonant cavity composed of an AlAs/ GaAs distributed Bragg reflector ͑DBR͒ structure, in which the resonant wavelength corresponds to the absorption peak of InGaAs absorption layers, i.e., a resonant cavity enhanced HPT ͑RCE-HPT͒. [5][6][7][8][9][10] The RCE-HPT structures allow for vertical integration with two-dimensional arrays of components in parallel optical systems and show potential for applications in telecommunication and optical computing. 9,10 In an npn-type RCE-HPT with an open-base common collector configuration, photogenerated electrons drift towards the collector ͑i.e., the substrate͒ and photogenerated holes drift to the p-type base layer.…”

Section: Introductionmentioning

confidence: 99%

“…[5][6][7][8][9][10] The RCE-HPT structures allow for vertical integration with two-dimensional arrays of components in parallel optical systems and show potential for applications in telecommunication and optical computing. 9,10 In an npn-type RCE-HPT with an open-base common collector configuration, photogenerated electrons drift towards the collector ͑i.e., the substrate͒ and photogenerated holes drift to the p-type base layer. The holes accumulating in the base region lower the barrier ͑i.e., screen the built-in field at emitter-base interface͒ experienced by the electrons in the emitter, thereby causing electron injection from the wide band gap AlGaAs emitter into the base under a forward bias ͑as illustrated in Fig.…”

Section: Introductionmentioning

confidence: 99%

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Influence of structural defects on carrier recombination and current gain in an InGaAs/AlGaAs/GaAs heterojunction phototransistor

Lin

Rich

Sjolund

et al. 1996

Journal of Applied Physics

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P-type interface charge control layers for enabling GaN/SiC separate absorption and multiplication avalanche photodiodes Appl. Phys. Lett. 101, 093506 (2012) Recent improvements of the JET lithium beam diagnostic Rev. Sci. Instrum. 83, 10D533 (2012) Bulk and interfacial deep levels observed in In0.53Ga0.47As/GaAs0.5Sb0.5 multiple quantum well photodiodeWe have studied the influence of structural defects on the spatial variation of radiative and nonradiative recombination in an InGaAs/AlGaAs/GaAs resonant cavity enhanced npn heterojunction phototransistor ͑HPT͒ structure using cathodoluminescence ͑CL͒ and electron beam-induced current ͑EBIC͒ imaging. Absorber layers of InGaAs/GaAs multiple quantum wells ͑MQWs͒ are used to provide the photosensitivity for light with wavelengths that are transparent to the GaAs substrate. The current gain of the HPT under an applied bias voltage depends on the hole accumulation efficiency in the base and therefore on the hole lifetime. Strain relaxation-induced misfit dislocations in the MQWs are found to create regions of enhanced nonradiative recombination thereby reducing locally the hole accumulation efficiency and current gain. The reduction in the local EBIC signal caused by the dark line defects is less than ϳ20%, suggesting that misfit dislocations in this sample have a relatively small impact on overall device performance. EBIC and CL are found to be excellent complementary probes of the hole accumulation efficiency and relative recombination rates, owing to the high spatial resolution ͑ϳ1 m͒ of excitation of the electron beam used in these techniques. The temperature dependence of the EBIC and spectrally integrated CL images is examined for 85рTр300 K, and reveals that nonradiative recombination in the vicinity of misfit dislocations is predominantly thermally activated with observed spatial variations in lifetime and activation energy.

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Section: A CL Spectroscopy and Imaging Of Excitonic Transitions As Asupporting

confidence: 67%

Section: A CL Spectroscopy and Imaging Of Excitonic Transitions As Asupporting

confidence: 67%

Section: Methodsmentioning

confidence: 99%