High gain monolithic W-band low noise amplifiers based on pseudomorphic high electron mobility transistors

Performance of Al0.24Ga0.76As/In0.22Ga0.78As double-heterojunction HEMTs with an as deposited and a buried gate

“…Millimetre-wave power applications demand active devices with high cut-off frequencies and large current driving capability. High electron mobility transistors (HEMTs) are thought to be one of the most promising devices for high frequency operation due to their good frequency performance [1][2][3][4][5][6]. For example, single-heterojunction HEMTs (SH-HEMTs) employing one electron supply layer have shown excellent unity current gain frequencies and very low noise figures [1][2][3].…”

“…High electron mobility transistors (HEMTs) are thought to be one of the most promising devices for high frequency operation due to their good frequency performance [1][2][3][4][5][6]. For example, single-heterojunction HEMTs (SH-HEMTs) employing one electron supply layer have shown excellent unity current gain frequencies and very low noise figures [1][2][3]. However, they generally exhibit low current densities due to a relatively small number of electron carriers in the channel.…”

Influence of Sinking-Gate on Al0.24Ga0.76As/In0.22Ga0.78As Double Heterojunction High Electron Mobility Transistors

“…By annealing Pt gate at 280 ℃ for 5 minutes, two enhanced peaks are positively shifted. The g m,max for a HEMT is related to the distance between the gate and Schottky metal (d eff ) and electron saturation velocity (υ sat ), which is typical expressed as: [1] In the g m vs. V GS characteristics, one peak is due to electron carriers in the InGaAs channel and the other is due to electron carriers transferred into the δ(n + )-GaAs layer. On the other hand, the d eff is reduced by sinking Pt gate into the Schottky barrier and in inverse proportion to g m,max .…”

“…High frequency operating and large current driving capabilities are important for active device in millimeter-wave power applications. There are several works demonstrate high electron mobility transistors (HEMTs) be one of the most promising devices for high frequency operation due to their good frequency performance [1][2][3][4][5]. Such as structures of single heterojunction HEMTs (SH-HEMTs) employing one electron supply layer have shown excellent unity current gain frequencies and very low noise figures.…”

“…Such as structures of single heterojunction HEMTs (SH-HEMTs) employing one electron supply layer have shown excellent unity current gain frequencies and very low noise figures. However, they generally exhibit low current densities due to relatively small number of electron carriers in the channel [1][2]. Increasing the doping concentration of electron supply layer may be an approach to pull up the current density but also reduce the breakdown voltage, hence also limit the power handle capability [3].…”