High gain lateral bipolar transistor

Verdonckt-Vandebroek, S.; Wong, S.S.; Ko, P.K.

doi:10.1109/iedm.1988.32842

Cited by 14 publications

(3 citation statements)

References 3 publications

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“…These measured current gains have high values compatible with those in [3], [4]. Our high current gains obtained in the low level injection regime can be attributed to the gate-assisted barrier lowering, which enhances electron injection into the surface depletion region such that the surface electron diffusion current is by three to four orders of magnitude greater than not only the pure lateral bipolar collector current but also the base current [6].…”

Section: Experimental Observationssupporting

confidence: 81%

“…Recently, have published a series of the work on the threeterminal gated lateral bipolar transistors in the submicrometer MOSFET structures. Such gated lateral bipolar transistors have exhibited new features in terms of high current gain, high cut-off frequency, and improved low-temperature operation, and thus can further be utilized for cost effective mixed-mode BiCMOS applications [3]-151. High current gains measured are considerably due to three factors [3]-[5]: i) the short base width; ii) the SiOz/Si interface of MOS quality; and iii) the gate-assisted barrier lowering, i.e., the surface emitter-base junction barrier height is lowered under gate modulation and thus most of the minority carriers injected from the emitter are limited to the surface depletion region while the base current is not affected.…”

mentioning

confidence: 99%

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Base current reversal phenomenon in a CMOS compatible high gain n-p-n gated lateral bipolar transistor

Huang

Chen

1995

IEEE Trans. Electron Devices

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Base current reversal phenomenon is newly observed in a CMOS compatible high gain n-p-n gated lateral bipolar transistor. We attribute this phenomenon to avalanche generation as verified experimentally and by two-dimensional device simulation. Detailed investigation reveals that: i) the multiplication ratio increases exponentially with the collector voltage or equivalently the peak field at the surface collector corner; and ii) the multiplication ratio is independent of not only the low level base-emitter forward biases applied but also the base width of the transistors fabricated by the same process. Design guideline for suppression of the base current reversal has been established such as to fully realize the potential of the gated lateral bipolar transistors, i.e., a very high current gain of 11,600 can be maintained as long as the power supply voltage is less than the critical value of 1.78 V. On the other hand, new application directly employing this phenomenon has been suggested. Comparisons between the base current reversal phenomenon in the gated lateral bipolar transistor and that in the vertical bipolar transistor have also been performed and significant differences between the two have been drawn and have been adequately explained.

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Section: Experimental Observationssupporting

confidence: 81%

mentioning

confidence: 99%

Base current reversal phenomenon in a CMOS compatible high gain n-p-n gated lateral bipolar transistor

Huang

Chen

1995

IEEE Trans. Electron Devices

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“…Lateral bipolar transistors can also be fabricated in some bipolar or BiCMOS integrated circuits, e.g., a p-n-p bipolar transistor in a BiCMOS process is usually fabricated as a lateral transistor. Lateral transistors were investigated in the late 1960s [1][2][3][4][5][6]. Lateral bipolar transistors on SOI substrate [7][8][9] have also been reported.…”

Section: Introductionmentioning

confidence: 99%

VES-BJT: A Lateral Bipolar Transistor on SOI with Polysilicon Emitter and Collector

Mierzwinski

Kuźmicz

2023

Electronics

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This paper summarizes the results of investigations of bipolar transistors made in VESTIC (Vertical Slit Transistor-based Integrated Circuits) technology. This technology was proposed by W. Maly as an alternative to classical bulk CMOS technology. However, the basic VESTIC cell can be used not only to make field effect transistors but also to make bipolar transistors. Their structures differ in many ways from existing structures of bipolar transistors. The investigations reported here aim to answer the question: can VESTIC-based lateral bipolar transistors be useful as active devices, and can they be made technologically compatible with field effect VESTIC devices? The theoretical studies were followed by the fabrication and measurements of VESTIC-based p-n-p and n-p-n bipolar devices. Although the manufacturing technology available was far from optimal, working bipolar devices were obtained. The results show that VESTIC-based bipolar devices may achieve acceptable parameters if made with state-of-the-art manufacturing technology. The main outcome of the research reported in the paper is that p-n-p and n-p-n bipolar transistors with acceptable parameters may be fabricated, together with field effect devices, in VESTIC-based integrated circuits. As a result, the VESTIC technology could become the new original BiCMOS technology.

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Very high current gain enhancement by substrate biasing of lateral bipolar transistors on thin SOI

Edholm

Olsson

Söderbärg

1993

Microelectronic Engineering

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High gain lateral bipolar transistor

Cited by 14 publications

References 3 publications

Base current reversal phenomenon in a CMOS compatible high gain n-p-n gated lateral bipolar transistor

Base current reversal phenomenon in a CMOS compatible high gain n-p-n gated lateral bipolar transistor

VES-BJT: A Lateral Bipolar Transistor on SOI with Polysilicon Emitter and Collector

Very high current gain enhancement by substrate biasing of lateral bipolar transistors on thin SOI

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