High-gain lateral bipolar action in a MOSFET structure

Verdonckt-Vandebroek, S.; Wong, S.S.; Woo, J.C.S.; Ko, P.K.

doi:10.1109/16.97413

Cited by 99 publications

(23 citation statements)

References 32 publications

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“…These devices exhibit high transconductance, ideal collector turn-on characteristics, and improved noise performance compared to the surface channel GBJT. At the same time, a high current gain of more than lo00 is achieved, which is typical for a GBJT [9].…”

Section: Introductionmentioning

confidence: 89%

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Shallow buried channel gated BJT on TFSOI substrate

Chen

Woo

1994

IEEE Electron Device Lett.

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The gated BJT structure is inherently suitable for SO1 BiCMOS technology. However, being a surface channel device, it suffers higher noise and degraded carrier transport. In this study, a novel shallow buried channel design on TFSOI is proposed. Devices with various geometries have been fabricated with a simple CMOS-compatible process. These devices have low turn-on voltage, ideal BJT I-V characteristics with current gain higher than 1O00, and a maximum transconductance of 290 mS/mm for a 0.5 pm channel length and 15 nm gate oxide. Careful measurements show that an order of magnitude improvement in noise performance can be expected from the buried channel operation. These devices are suitable for various BiCMOS applications.

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Section: Introductionmentioning

confidence: 89%

“…barrier than the holes [9]. The base current has a ideality factor increased recombination near the n-region potential minimum.…”

Section: Device Characteristicsmentioning

confidence: 99%

Shallow buried channel gated BJT on TFSOI substrate

Chen

Woo

1994

IEEE Electron Device Lett.

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“…Thus the NPN vertical BIMOS transistor provides an optimized integration by combining three components in only one structure of the component size allowing many analogue numerical applications in the microelectronics field. The hybrid mode is the most interesting one since the bipolar and the MOS effects act together through a gate and an oxide, face to face to the intrinsic base of the vertical bipolar NPN transistor (Galy 1994, Verdonck-Vanderbroek et al 1991. The NPN vertical BIMOS transistor can be used as a gated-controlled bipolar current gain.…”

Section: Nomenclaturementioning

confidence: 99%

The ideal NPN vertical BIMOS transistor analytical model simulation and experimental results of the collector current

Galy¹,

Berland²

1996

International Journal of Electronics

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“…The filter was also designed for micropower applications and had a eut-off frequency of 22 kHz (with a maximum eut-off frequency of 41 kHz). The design approach in the paper differed from the one described in this work, since the authors used an enhanced mode of lateral PNP operation, in which the voltage at the gate terminal was used to increase the effective beta of the transistor and significantly decrease base current, as described in [24] and [30].…”

Section: -A Comparison Of Filter Performancementioning

confidence: 99%

“…Additional information on lateral bipolar transistors, including detailed discussions of the devices physics, can be found in [24], [30] and [31].…”

Section: -Lateral Pnp Transistors: Structure and Layoutmentioning

confidence: 99%