High-gain image intensifier studies of electroluminescence in III–V semiconductors

Abstract

A high-gain multistage image intensifier and microscope are used to study low-current dc electroluminescence in bulk semiconductors. A comparison is made with cathodoluminescence, and preliminary results for Ga1−xAlxAs and GaP are presented. It is shown how the technique gives information about the electrical contacts to a specimen, the electroluminescence spectra at points on a specimen, and the distribution of radiative recombination centers.