High-Gain and Low-Dark Current GaN p-i-n Ultraviolet Avalanche Photodiodes Grown by MOCVD Fabricated Using Ion-Implantation Isolation

Suppression of the dark current in PbS quantum dot infrared photodetectors through the introduction of a CuInSeS interfacial layer

“…The Fermi level of the film is determined by the secondary electron cutoff edge, and the valence band position is obtained through calculations. 2,6,35 The conduction band position is determined through gap energy calculations (Fig. 3c).…”

“…Photodiodes are one of the primary structures used in photodetection, and various materials can be employed for constructing photodiodes. [4][5][6][7] Compared to materials like single-crystal silicon (Si), 8,9 gallium nitride (GaN), 10 conjugated polymers, 3 and perovskite, [11][12][13][14] CQDs are distinctive due to their tunable bandgap spanning from visible to infrared regions. [15][16][17] This uniqueness makes them a promising avenue for extending the range of optical detection.…”

“…18,24,25 Increased leakage current can affect the sensitivity and detection rate of the detector, making the suppression of dark current a key engineering challenge in detector technology. 6,9,18,26,27 This issue requires urgent resolution to more effectively suppress dark current, thereby achieving a more precise detection capability. 28 In this study, a CuInSeS quantum dot (QD) interfacial layer was introduced between the QD and ZnO layers.…”