1978
DOI: 10.1109/tmtt.1978.1129333
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High-Frequency Waveform Generation Using Optoelectronic Switching in Silicon

Abstract: A ,love[ approach to provide redundancy in an N-way MESFET switch has been invented and realized with monolithic microwave integruted circuit technology. This switch circuit uses series and shunt FETs con-$gured in a manner toprevent failure of the switch even i f several FETs fail. For example, a SPDT redundant switch is capable of providing 1.3-dB insertion loss and return loss and isolation better than 20 and 35 dB, respectively, over dc to 12 GHz, even if25 % of the FETs fail in euch arm.

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Cited by 50 publications
(15 citation statements)
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“…This was attributed to drift velocity saturation, as discussed in [2]. = 1,2 (7) where in the present case, w1 = 0.7, wg = 0.3, t,l = 0.5 and t r 2 = 2.5, with t in nanoseconds.…”
Section: Methodssupporting
confidence: 62%
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“…This was attributed to drift velocity saturation, as discussed in [2]. = 1,2 (7) where in the present case, w1 = 0.7, wg = 0.3, t,l = 0.5 and t r 2 = 2.5, with t in nanoseconds.…”
Section: Methodssupporting
confidence: 62%
“…The function gi(t) = gioexp(-r1/7zff) and (7) thus have equal time integrals when evaluated over 0 < t < 00.…”
Section: Methodsmentioning
confidence: 99%
See 2 more Smart Citations
“…Real switches behave in a much less ideal fashion. A typical output from a bulk type avalanching photoconductor is shown in Figure lb Several methods for generation of more complex waveforms have been suggested and a few have been tested (2)(3)(4)(5)(6)(7). However, little has been written on the limitations of these circuits imposed by the non-ideal switch.…”
Section: Introductionmentioning
confidence: 99%