2019
DOI: 10.1109/tpel.2018.2890625
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High-Frequency SiC-Based Inverters With Input Stages Based on Quasi-Z-Source and Boost Topologies—Experimental Comparison

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Cited by 22 publications
(13 citation statements)
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“…Experimental results obtained from laboratory tests of equivalent 6-kW 100-kHz inverters based on SiC MOSFETs and Schottky diodes are provided. Results of the experiments show that the quasi ZSI topology has input inductor current quality, output voltage quality and also power losses (at high values of input voltage) [63].…”
Section: Quasi Z Source Inverter Topologiesmentioning
confidence: 99%
“…Experimental results obtained from laboratory tests of equivalent 6-kW 100-kHz inverters based on SiC MOSFETs and Schottky diodes are provided. Results of the experiments show that the quasi ZSI topology has input inductor current quality, output voltage quality and also power losses (at high values of input voltage) [63].…”
Section: Quasi Z Source Inverter Topologiesmentioning
confidence: 99%
“…ii) With the PI-based MPPT control, the active-state duty cycle [ ] of the kth SM is obtained through (15).…”
Section: Implementation and Advantagesmentioning
confidence: 99%
“…The main advantage of the CqZSI compared to DqZSI is that this topology has a continuous input current [8]. Many comparisons between ISIs and traditional twostage inverters have demonstrated that single-stage inverters have better system reliability and output quality [10][11][12]. Moreover, when the voltage gain of the inverter is less than two, the ZSI and qZSI have higher efficiency than the conventional two-stage inverter [10,12].…”
Section: Introductionmentioning
confidence: 99%