Abstract:Resistive switching (RS) of Transition Metal Oxides (TMOs) has become not only an attractive choice for the development of next generation non-volatile memory, but also as a suitable family of materials capable of supporting high-frequency and high-speed switching needed for the next generation wireless communication technologies, such as 6G. The exact mechanism of RS is not yet clearly understood; however, it is widely accepted to be related to the formation and rupture of sub-stoichiometric conductive filame… Show more
“…11 In the time that follows, research studies focus on mathematical models, 12 resistance mechanisms, 13,14 across-array structures, preparation processing, 15 and fabrication materials. 16,17 The memristor used in memory applications is called resistive random-access memory (RRAM). It is considered the key to breaking through AI arithmetic and big data, to meet high-speed computing and also to meet low-precision, high-speed computing needs raised by IoT and neural network computing.…”
The development of new technologies has led to an explosion of data, while the computation ability of traditional computers is approaching its upper limit.
“…11 In the time that follows, research studies focus on mathematical models, 12 resistance mechanisms, 13,14 across-array structures, preparation processing, 15 and fabrication materials. 16,17 The memristor used in memory applications is called resistive random-access memory (RRAM). It is considered the key to breaking through AI arithmetic and big data, to meet high-speed computing and also to meet low-precision, high-speed computing needs raised by IoT and neural network computing.…”
The development of new technologies has led to an explosion of data, while the computation ability of traditional computers is approaching its upper limit.
“…Amorphous semiconductors possess excellent chemical anticorrosion and impermeability due to their dense morphology and chemical homogeneity, [30] with diverse applications in solar energy conversion, [31,32] microelectronics, [33,34] catalysis [35,36] and optoelectronics. [37,38] Compared with crystalline films, amorphous materials lack classical crystal defects, which brings three advantages: 1) few energetic heterogeneous sites make chemical corrosion difficult to trigger; 2) the lack of high-dimensional defects (like grain boundaries) as ions/atoms migration channels; 3) reduced fluctuations of local surface charge with a smoother surface potential for good contact.…”
It is challenging to achieve long-term stability of perovskite solar cells due to the corrosion and diffusion of metal electrodes. Integration of compact barriers into devices has been recognized as an effective strategy to protect the perovskite absorber and electrode. However, the difficulty is to construct a thin layer of a few nanometers that can delay ion migration and impede chemical reactions simultaneously, in which the delicate microstructure design of a stable material plays an important role. Herein, ZrN x barrier films with high amorphization are introduced in p-i-n perovskite solar cells. To quantify the amorphous-crystalline (a-c) density, pattern recognition techniques are employed. It is found the decreasing a-c interface in an amorphous film leads to dense atom arrangement and uniform distribution of chemical potential, which retards the interdiffusion at the interface between ions and metal atoms and protect the electrodes from corrosion. The resultant solar cells exhibit improved operational stability, which retains 88% of initial efficiency after continuous maximum power point tracking under 1-Sun illumination at room temperature (25 °C) for 1500 h.
Resistive random-access memories (RRAMs) based on wide-bandgap oxides is not only a promising candidate for next-generation non-volatile storage technology but also a suitable family of materials capable of neural network computing. However, the exact mechanism of resistive switching (RS) is not yet clearly understood. In this paper, we investigate Ga 2 O 3 -based RRAMs to understand the microscopiclevel RS behavior and its relation to the actual process. We nd that the oxygenation process during magnetron sputtering affects the crystallization orientation of Ga 2 O 3 thin lms. The XRD analysis reveals that the crystalline orientation of Ga 2 O 3 lms deposited with O 2 ow is [006], and the prepared devices exhibit a lower operating voltage, a higher high/low resistance state ratio, and a more concentrated distribution. By using rst-principles calculations and the climbing image nudged elastic band (CI-NEB) method, we show that the oxygen vacancies of the [006] crystalline Ga 2 O 3 lms only need to migrate in the (110) plane to form conductive laments with an energy barrier of 0.65 eV. In contrast, [122] crystalline Ga 2 O 3 lms require additional movement in the Z-axis direction, resulting in a much higher energy barrier. Our results can be utilized to modulate the operating voltage and improve the endurance of Ga 2 O 3 -based RRAMs.
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