High-Frequency Organic Complementary Ring Oscillator Operating up to 200 kHz

Kitamura, M.; Kuzumoto, Yasutaka; Aomori, Shigeru; Arakawa, Yasuhiko

doi:10.1143/apex.4.051601

Cited by 36 publications

(19 citation statements)

References 18 publications

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“…For organic complementary ring oscillators, stage delays below 1 ls have been reported. 8,9 However, these circuits required high voltages (! 20 V) and an inert atmosphere, due to the lack of air stability of the C 60 n-channel TFTs.…”

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confidence: 99%

Contact properties of high-mobility, air-stable, low-voltage organic n-channel thin-film transistors based on a naphthalene tetracarboxylic diimide

Rödel

Letzkus

Zaki

et al. 2013

Applied Physics Letters

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Air-stable bottom-gate, top-contact n-channel organic transistors based on a naphthalene diimide exhibiting electron mobilities up to 0.8 cm 2 /Vs at low voltages were fabricated. Transistors with channel lengths of 1 lm show a transconductance of 60 mS/m, but are significantly limited by the contact resistance. Transmission line measurements in combination with contact resistance models were applied to investigate this influence. Both contact resistance and contact resistivity are proportional to the inverse gate overdrive voltage. Organic complementary ring oscillators were fabricated on a flexible plastic substrate showing record signal delays down to 17 ls at a supply voltage of 2.6 V. V

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mentioning

confidence: 99%

Contact properties of high-mobility, air-stable, low-voltage organic n-channel thin-film transistors based on a naphthalene tetracarboxylic diimide

Rödel

Letzkus

Zaki

et al. 2013

Applied Physics Letters

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“…The Au contact electrodes were thermally evaporated using a shadow mask, and the channel length and width were 20 µm and 3.5 mm, respectively. The Au contact electrodes were chemically treated with pentafluorobenzenethiol to reduce the contact resistance [40][41][42][43][44]. This substrate is called the base film in this work.…”

Section: Methodsmentioning

confidence: 99%

Solvent-Free Toner Printing of Organic Semiconductor Layer in Flexible Thin-Film Transistors

et al. 2017

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A solvent-free printing process for printed electronics was successfully developed using toner-type patterning of organic semiconductor toner particles and subsequent thin-film formation. These processes use the same principle as that used for laser printing. The organic thin-film transistors were prepared by electrically distributing the charged toner onto a Au electrode on a substrate film followed by thermal lamination. The thermal lamination was effective for obtaining an oriented and crystalline thin film. Toner printing is environmentally friendly compared with other printing technologies because it is solvent free, saves materials, and enables easy recycling. In addition, this technology simultaneously enables both wide-area and high-resolution printing.

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“…Table 1 provides examples of values reported during the last 12 years for a range of technologies and materials. [ 4,5,[12][13][14][15][16][17][18][19][20][21][22][23][24][25][26][27][28][29][30][31] From this list, only six reports [ 18,22,[26][27][28]31 ] appear to meet the above benchmark and in two of these cases [ 18,22 ] the high frequency/short stage delay criterion was only achieved with supply voltages ≥50 V.…”

Section: Introductionmentioning

confidence: 99%

Organic Ring Oscillators with Sub‐200 ns Stage Delay Based on a Solution‐Processed p‐type Semiconductor Blend

Watson

Brown

Carter

et al. 2016

Adv Elect Materials

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the manufacturing processes divide naturally into two general approaches i.e., solution-processing and vacuum processing. In the former approach some or all transistor and circuit elements are deposited from solution and holds out the promise of low-cost, high-volume roll-to-roll (R2R) manufacture of circuits using, for example, inkjet [ 7 ] or gravure printing. [ 8 ] On the other hand, processes requiring vacuum evaporation of one or more component, or photolithography and dry-etching are more suited to batch-processing.Progress has been, and continues to be made, in applying mass-printing R2R processes [ 9 ] with a range of logic circuits being demonstrated [ 10 ] albeit based on singlewalled carbon nanotubes as the active material. High-speed metal patterning and barrier layer deposition are commercially used processes. R2R circuit fabrication based entirely on vacuum evaporation is, therefore, feasible. [ 11 ] For example, saturated-load unipolar ring oscillators (ROs) were produced in a R2R-compatible environment. [ 12 ] Although a stage delay of 46 µs was achieved at a high supply voltage, circuit performance was compromised by a nonoptimal design purposely limited to the resolution and registration capability of a high-speed metal printing process. Nevertheless, the stage delay achieved was much shorter than previously reported for ROs produced using all-solution mass-printing processes ( Table 1 ) . [13][14][15] This refl ects the generally higher mobilities of vacuum-evaporated small-molecules [ 12 ] compared with solutionprocessed small-molecules. [ 16,17 ] Other performance-degrading features of solution R2R-processes include a relatively thick dielectric layer and relatively poor resolution. The former leads to high operating voltages. The latter reduces operating speed by restricting the source-drain gap, i.e., the channel length, L , of the OTFTs to a minimum of about 30-40 µm. Achieving a resolution below ≈10 µm to improve device speed poses a signifi cant near-term challenge for mass-printing processes. Relatively poor registration between different patterned layers is a further problem leading to undesirable parasitic effects. [ 12 ] It is not surprising, therefore, that the signifi cant improvements in organic circuit performances have been demonstrated using the higher resolution approaches derived from silicon technology. At the most basic level, this is confi ned to patterning source-drain electrodes by photolithography to achieve channel lengths of 5 µm High-frequency ring oscillators with sub-microsecond stage delay fabricated from spin-coated fi lms of a specially formulated small-molecule/host-polymer blend are reported. Contacts and interconnects are patterned by photolithography with plasma etching used for creating vias and removing excess material to reduce parasitic effects. The characteristics of transistors with 4.6 µm channel length scale linearly with channel width over the range 60-2160 µm. Model device parameters extracted using Silvaco's Universal Organic Thin Film Transistor...

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High-Frequency Organic Complementary Ring Oscillator Operating up to 200 kHz

Cited by 36 publications

References 18 publications

Contact properties of high-mobility, air-stable, low-voltage organic n-channel thin-film transistors based on a naphthalene tetracarboxylic diimide

Contact properties of high-mobility, air-stable, low-voltage organic n-channel thin-film transistors based on a naphthalene tetracarboxylic diimide

Solvent-Free Toner Printing of Organic Semiconductor Layer in Flexible Thin-Film Transistors

Organic Ring Oscillators with Sub‐200 ns Stage Delay Based on a Solution‐Processed p‐type Semiconductor Blend

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