High frequency high power density 3D integrated Gallium Nitride based point of load module

Ji, Shu; Reusch, David; Lee, Fred C.

doi:10.1109/ecce.2012.6342242

Cited by 49 publications

(36 citation statements)

References 10 publications

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“…From 2010 to 2012 several high frequency 3D integrated POL converters with GaN devices were demonstrated [4]- [6]. Fig.…”

Section: B Pol With Gan Devicementioning

confidence: 99%

“…As a result, [5] only demonstrated the 3D integrated POL converter up to 2MHz. In order to further increase switching frequency to increase converter power density, [6] used IR's integrated GaN device (two GaN devices are integrated in wafe-level) to build 3D integrated POL converters. By using wafe-level integrated GaN devices, the parasitic inductance can be further reduced.…”

Section: B Advanced Package To Minimize Parasitic Inductancementioning

confidence: 99%

“…Then, CPES also proposed several methods, such as embedding bare die devices into active layer, building shielding layer to reduce parasitic inductance of active layer. Furthermore, the GaN high electron mobility transistor (HEMT) was also evaluated and packaged for 3D integrated POL converter to help further increasing switching frequency [4]- [6]. The detailed information about high frequency active layer developed by CPES will be introduced in section III.…”

Section: Concept Of 3d Integrationmentioning

confidence: 99%

“…3D Integrated POL with IR GaN devices[6]: (a) single-phase version, (b) two-phase version, (c) efficiency of single-phase version. Power density and inductor thickness comparison between singlephase and two-phase 3D integrated POL converters[6]: (a) power density comparison, (b) core thickness and layer number of LTCC tape comparison.…”

mentioning

confidence: 99%

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Overview of three-dimension integration for Point-of-Load converters

Lee

2013

2013 Twenty-Eighth Annual IEEE Applied Power Electronics Conference and Exposition (APEC)

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High density integrated Point-of-Load (POL) converter is today's industry trend for portable electronic applications. In the past 10 years, Center for Power Electronics Systems (CPES) spent tremendous research efforts in this area and has successfully demonstrated a three-dimension (3D) integration method using magnetic as a substrate to achieve a very high power density at a high current level. CPES not only proposed a series of methods to reduce parasitic inductance of active layer for high frequency operation, but also developed several advanced low profile magnetic structures for 3D integration. This paper gives an overview of CPES's 10-year research efforts on high density 3D integrated POL converters. With CPES's latest technologies, a 20A POL converter with GaN devices was demonstrated with power density as high as 1000W/in 3 , which is a factor of 10 improvements compared to industry products.

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“…From 2010 to 2012 several high frequency 3D integrated POL converters with GaN devices were demonstrated [4]- [6]. Fig.…”

Section: B Pol With Gan Devicementioning

confidence: 99%

Section: B Advanced Package To Minimize Parasitic Inductancementioning

confidence: 99%

Section: Concept Of 3d Integrationmentioning

confidence: 99%

mentioning

confidence: 99%

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Overview of three-dimension integration for Point-of-Load converters

Lee

2013

2013 Twenty-Eighth Annual IEEE Applied Power Electronics Conference and Exposition (APEC)

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“…Using high frequency Gallium Nitrid devices and the low profile LTCC inductor su 10A POL module has been demonstrated power density in [14], which is roughly 2-3 t density of state-of-the-art alternatives with sa The 20A output current can be easily achiev two-phase converters. For the two-phase bo laid out in [14], either two single-phase indu phase coupled inductor can be used as the m The coupled LTCC inductor substrate is pro the two-phase POL converter.…”

Section: Introductionmentioning

confidence: 98%

FEA modeling of the low profile coupled inductor with non-uniform flux distribution

Lee

2013

2013 Twenty-Eighth Annual IEEE Applied Power Electronics Conference and Exposition (APEC)

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The high frequency 3-dimension (3D) integrated Point-of-Load (POL) module has been demonstrated with more than 800W/in 3 power density, in which the low profile inductor serves as the substrate carrying the active components. The performance of the magnetic substrate can be further improved by inversed coupling two single-phase inductors. However, the non-uniform distributed flux and permeability in the low profile coupled inductor, raises some new challenges for its inductance and core loss modeling. The accuracy of the conventional reluctance and core loss model, which usually assume uniform flux and core loss density in the core, are questionable. Therefore, the Finite Element Analysis (FEA) simulation tool is used to develop the inductance and core loss models. With these FEA models, the coupled inductor substrates are designed and evaluated for Multi-MHz two-phase 3D integrated POL modules. The impact of the inversed coupling on the magnetic performance of the inductor substrate is also discussed. The comparison between coupled and non-coupled inductors reveals that the inversed coupling can reduce both the core volume and core loss by 40%. The analytical results are verified by the experimental data.

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Multi‐resonant gate drive circuit of isolating‐gate GaN HEMTs for tens of MHz

Hattori¹,

Umegami²,

Yamamoto³

2017

IET Circuits, Devices & Systems

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Research of power supplies for megahertz (MHz) class applications such as a semiconductor manufacturing apparatus, induction heater and wireless transfer is carried out. A liner amplifier is generally used for MHz class applications. The loss of the power devices on a liner amplifier is theoretically high. To reduce the loss, the class E and Φ 2 inverters are proposed, and some of the resonant gate drive circuits (GDC) are utilised at those of the gate port. However, the control signal of the GDC becomes complicated due to the additional switches. Moreover, the switches in the GDC perform the hardswitching, and the drive loss can thus be increased. In this study, a multi-resonant gate drive circuit is proposed, and its design method is introduced. It can generate the trapezoidal wave gate-to-source voltage with the simple control signal, and zero voltage switching operation is achieved at the switches of the gate drive circuit. First, its operation is experimentally verified. Secondly, the drive loss is also compared with that of the conventional circuit. Furthermore, its operation with the class E inverter with a cascode GaN high-electron-mobility transistor (HEMT) is confirmed at the switching frequency 13.56 MHz.

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High frequency high power density 3D integrated Gallium Nitride based point of load module

Cited by 49 publications

References 10 publications

Overview of three-dimension integration for Point-of-Load converters

Overview of three-dimension integration for Point-of-Load converters

FEA modeling of the low profile coupled inductor with non-uniform flux distribution

Multi‐resonant gate drive circuit of isolating‐gate GaN HEMTs for tens of MHz

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