High-Frequency Gallium Arsenide Point-Contact Rectifiers

Sharpless, W.M.

doi:10.1002/j.1538-7305.1959.tb01577.x

Cited by 39 publications

(9 citation statements)

References 2 publications

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“…Pointcontact gallium arsenide microwave diodes have been reported by Jenney (2) and Sharpless (3). Recently it has been reported (1) that the electron lattice scattering mobility in GaAs may be as high as 12,000 cm 2 v -1 cm -1 and that material with electron mobilities as high as 6000 cm" v -1 cm -~ is now being produced.…”

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confidence: 98%

“…Recently it has been reported (1) that the electron lattice scattering mobility in GaAs may be as high as 12,000 cm 2 v -1 cm -1 and that material with electron mobilities as high as 6000 cm" v -1 cm -~ is now being produced. Pointcontact gallium arsenide microwave diodes have been reported by Jenney (2) and Sharpless (3). These point-contact diodes have operated efficiently as first detectors at 6 Kmc (2), and at 11 Kmc and 60 Kmc (3).…”

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confidence: 99%

“…Pointcontact gallium arsenide microwave diodes have been reported by Jenney (2) and Sharpless (3). These point-contact diodes have operated efficiently as first detectors at 6 Kmc (2), and at 11 Kmc and 60 Kmc (3). Jenney (4) has described the very low lifetime of the minority carriers in presently available gallium arsenide and the consequent difficulties in the fabrication of conventional bipolar transistors from the material.…”

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Gallium-Arsenide Diffused Diodes

Lowen

Rediker

1960

J. Electrochem. Soc.

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Gallium arsenide has been used to fabricate variable reactance and computer diodes which compare favorably with the best commercially available of germanium and silicon. The diodes have been fabricated by zinc diffusion into n-type gallium arsenide. Ohmic contact to the n-type material has been made with an antimony-gold alloy and to the p-type side with indium. Etching is used to remove the p-type diffused skin from everywhere but under the indium contact, thereby forming the mesa and defining the p-n junction area. Rectification ratios (at 2 v) as high as 101~ have been achieved. The diodes have been operated successfully in a variable reactance amplifier at S-band (2800 mcps) and in millimicrosecond-switching computer circuits.) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 140.182.176.13 Downloaded on 2015-02-05 to IP

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Gallium-Arsenide Diffused Diodes

Lowen

Rediker

1960

J. Electrochem. Soc.

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“…Lately, a noise figure of 0.6 db (or an excess noise temperature of 44 °IC) 752 was reported by Uenohara and Bakanowski [1959 at 6 kMc/s using germanium diffused mesa-type p-n junction diodes refrigerated to 87 oIL The best noise figure so far measured is 0.3 db or 21 O K excess noise temperature for double side-band operation. This was obtained by Uenohara and Sharpless [1959] \; at 6 kMc/s using Ga-As point contact diodes refrigel'ated to 90 O IL Gallium arsenide diodes have many good features [Sharpless, 1959] including higher energy gap, larger electron mobility, and lower dielectric constant.…”

Section: Diode Amplifiers and Noise Figure Measurementsmentioning

confidence: 77%

URSI National Committee Report: Commission 7. Radio Electronics. 1. Parametric Amplifiers

Tien¹,

Heffner²

1960

J. RES. NATL. BUR. STAN. SECT. D. RAD. PROP.

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The parametric amplifier was fiJ'st introduced to the microwave field in 1957 by S uhl. In his first paper [Suhl, 1957a], he proposed an equivalent circuit for a cavity type of parametric amplifier. It consists of two resonant circui ts coupled to each other through a time-varying capacitor or inductor. The use of a ferromagnetic sample as a time-varying element was discussed. In his second paper [Subl, 1957b], he theorizes in great detail on three different possible operations of a ferromagnetic amplifier; namely (a) Electromagnetic, (b) semiclectromagnetic, and (c) magnetostatic. Tien and Suhl [1958] then worked out the traveling wave version of the parametric amplifier. In their paper a propagating circuit loaded with time-var~7 in g reactor was studied. They found that, for optimum gain and bandwidth, the following conditions must be satisfiedwhere WI, W2, and ware, respectively, the signal, idler, and pump frequencie , and {31, {32, and {3 are their phase velocities. In a later paper, Tien [1958] investigated amplification and frequency conversion of propagating circuits including bandwidth, noise figure, and circuits of opposite group velocities. An alternative derivation of Tien's gain expression was derived by Chang [1959a].The basic principles of parametric in teraction are the Manley and Rowe relations. They were discussed in a paper [Manley, 1956] published in 1956, actually earlier than Suhl's invention. It stated that power at different frequencies measured at the terminals of a nonlinear reactance must obey certain relations which bear the names of the authors. Rowe [1958 ; Manley and Rowe, 1959] later published two papers discussing, respectively, tbe mf1ll signal theory and general properties of a nonlinear elemen t. P antell [1958] al 0 studied the e n erg~r elations of f1 nonl in ear resistive clement. Some extension s or the Manley-Rowe relations have b een made by Yeh [1960] and by P. A. Sturro ck [1959], and alternative derivation have been presented by Salzberg [1957] and Weiss [1957a].An important calculation was carried out [Heffner and ,Vade, 1958] concerning noise of the parametric amplifiers. They found that noise generated in the idler circui t adds to the noise generated in the signal circuit. Under u ua] operatin g conditions, the noise figure of the parametric f1mplifi er is instead of 1 for a noiseless amplifi er. Here WI is the signal frequency and W 2, the idler frequency. The signal and the idler circuits arc assumed at the same temperature.T he parametric amplifiers so far described require it pum.p source at a freCJuency higher than that of tbe signal. A scheme was described by Bloom and Cbang [1958] in which an effective pump of frequency 2w is obtained by actually pumping at frequency w, without providing any resonant circuit at 2w. Another lOl'l-frequency pumping scheme was proposed by Hogan et aL [1958] and also independently b.y Heffner. In the latter scheme, the parametrIc amplifier involves four frequencies, and is sort of a modulator internally coupled wit...

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“…Bell Laboratories built an experimental sampling oscilloscope [13] with the notable achievement of fabricating a point contact GaAs diode [14] for use as the gate diode; the 6-dB point was 5.5 GHz. They were unable to test the full performance of the instrument (which was calculated to 100 ps) because they lacked a sufficiently fast pulse generator.…”

Section: A Post-war Prototypesmentioning

confidence: 99%

50 years of RF and microwave sampling

Kahrs

2003

IEEE Trans. Microwave Theory Techn.

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Measurement of microwave and UHF signals is often done with sampling techniques. In this paper, the techniques and technology of sampling of electrical signals is reviewed from 1950 to the present. It includes both references to the open literature, as well as an extensive review of relevant patents. It also provides an overview of sampling applications and the use of computer technology to compensate and correct for errors in the sampling process.

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High-Frequency Gallium Arsenide Point-Contact Rectifiers

Cited by 39 publications

References 2 publications

Gallium-Arsenide Diffused Diodes

Gallium-Arsenide Diffused Diodes

URSI National Committee Report: Commission 7. Radio Electronics. 1. Parametric Amplifiers

50 years of RF and microwave sampling

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