High-Frequency Electromagnetic Simulation and Optimization for GaN-HEMT Power Amplifier IC

Sangwan, Vivek; Kapoor, Dipesh; Tan, Cher Ming; Lin, Chia Han; Chiu, Hsien‐Chin

doi:10.1109/temc.2018.2820202

Cited by 18 publications

(12 citation statements)

References 44 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…With this method, the magnetic field distribution of the IC can be obtained at different frequencies (2, 3, and 4 GHz). The method is verified with experimental results, as shown in the work of [34].…”

Section: Simulation Methodologymentioning

confidence: 58%

“…Figure 6 shows the simulation result for 3 GHz operating frequency, respectively. Such a simulation method has been verified experimentally in our other works [34].…”

Section: Simulation Methodologymentioning

confidence: 71%

“…Recently, Tan et al [34] developed a method to "fabricate" an IC from its GDSII file in a computer under ANSYS environment. Once the IC is fabricated, the ANSYS high frequency structure simulator (HFSS) is employed to compute the EM field distribution over the surface of the chip.…”

Section: Simulation Methodologymentioning

confidence: 99%

“…Dielectric layers used in ANSYS HFSS simulation methodology are silicon carbide (SiC), GaN, and silicon nitride (SiN) to resemble the actual IC. Perfect electric conductor (PEC) boundary condition is used for ground plane and lumped port excitation is provided [34]. The overall electromagnetic simulation takes around 20 min.…”

Section: Simulation Methodologymentioning

confidence: 99%

See 3 more Smart Citations

Evaluation of the Potential Electromagnetic Interference in Vertically Stacked 3D Integrated Circuits

2020

Self Cite

View full text Add to dashboard Cite

Advancements in the functionalities and operating frequencies of integrated circuits (IC) have led to the necessity of measuring their electromagnetic Interference (EMI). Three-dimensional integrated circuit (3D-IC) represents the current advancements for multi-functionalities, high speed, high performance, and low-power IC technology. While the thermal challenges of 3D-IC have been studied extensively, the influence of EMI among the stacked dies has not been investigated. With the decreasing spacing between the stacked dies, this EMI can become more severe. This work demonstrates the potential of EMI within a 3D-IC numerically, and determines the minimum distance between stack dies to reduce the impact of EMI from one another before they are fabricated. The limitations of using near field measurement for the EMI study in stacked dies 3D-IC are also illustrated.

show abstract

Section: Simulation Methodologymentioning

confidence: 58%

“…Figure 6 shows the simulation result for 3 GHz operating frequency, respectively. Such a simulation method has been verified experimentally in our other works [34].…”

Section: Simulation Methodologymentioning

confidence: 71%

Section: Simulation Methodologymentioning

confidence: 99%

Section: Simulation Methodologymentioning

confidence: 99%

See 2 more Smart Citations

Evaluation of the Potential Electromagnetic Interference in Vertically Stacked 3D Integrated Circuits

2020

Self Cite

View full text Add to dashboard Cite

show abstract

“…Recently, Sangwan et al [8] developed a 3D layout simulation approach for the study of the EMI from an IC layout prior to its fabrication. This simulation approach provides good precision in the results as compared to the measurement results.…”

Section: Introductionmentioning

confidence: 99%

Electromagnetic Hotspots Identification in Integrated Circuits

Kapoor¹,

Sangwan²,

Tan³

2019

PIER Letters

Self Cite

View full text Add to dashboard Cite

Advancements in functionalities and operating frequencies of integrated circuits lead to the necessity to study Electromagnetic Compatibility/Electromagnetic Emissions (EMC/EMEs) from these devices. In this work, a methodology is developed, which combines near field electromagnetic measurements and 3D layout simulation of an Integrated Circuit (IC), to identify the sources of EME from a commercial IC. This methodology can help to narrow down the area of key importance with respect to EME sources, instead of the entire IC, before it is fabricated. Consequently, IC designers can optimize their design to minimize the EME before fabrication, saving cost and time significantly.

show abstract

Parameterized Surrogate Models of Microstrip Structures for Electromagnetic-Based Power Amplifier Design and Statistical Analysis

Ramella

Zanco

Stefano

et al. 2023

Lecture Notes in Electrical Engineering

View full text Add to dashboard Cite

High-Frequency Electromagnetic Simulation and Optimization for GaN-HEMT Power Amplifier IC

Cited by 18 publications

References 44 publications

Evaluation of the Potential Electromagnetic Interference in Vertically Stacked 3D Integrated Circuits

Evaluation of the Potential Electromagnetic Interference in Vertically Stacked 3D Integrated Circuits

Electromagnetic Hotspots Identification in Integrated Circuits

Parameterized Surrogate Models of Microstrip Structures for Electromagnetic-Based Power Amplifier Design and Statistical Analysis

Contact Info

Product

Resources

About