High-frequency characterization of on-chip digital interconnects

Kleveland, B.; Qi, Xiaoning; Madden, Lachlan; Furusawa, Takeshi; Dutton, R.W.; Horowitz, Mark; Wong, S.S.

doi:10.1109/jssc.2002.1004576

Cited by 71 publications

(44 citation statements)

References 35 publications

(60 reference statements)

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“…The measured voltage gain reaches its maximum value of 18.1 dB at around 1 GHz and this is about 5.5 dB lower than the simulation at high frequencies, due to parasitic effects. Since circuit performance is affected by interconnects, we investigated the effect of interconnects to verify the reduction in voltage gain at high frequencies [17]. In order to include the interconnect effects in the simulation, interconnects are represented by a lumped network model, as shown in Fig.…”

Section: ⅲ Measurement Resultsmentioning

confidence: 99%

Design of a 1~10 GHz High Gain Current Reused Low Noise Amplifier in 0.18 ㎛ CMOS Technology

Seong¹,

Jang²,

Choi³

2011

Journal of electromagnetic engineering and science

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In this paper, we propose a high gain, current reused ultra wideband (UWB) low noise amplifier (LNA) that uses TSMC 0.18 μm CMOS technology. To satisfy the wide input matching and high voltage gain requirements with low power consumption, a resistive current reused technique is utilized in the first stage. A π-type LC network is adopted in the second stage to achieve sufficient gain over the entire frequency band. The proposed UWB LNA has a voltage gain of 12.9～18.1 dB and a noise figure (NF) of 4.05～6.21 dB over the frequency band of interest (1～10 GHz). The total power consumption of the proposed UWB LNA is 10.1 mW from a 1.4 V supply voltage, and the chip area is 0.95×0.9 mm. Ⅰ. IntroductionThe ultra wideband (UWB) system is a new wireless technology that is capable of transmitting data over a wide spectrum of frequency bands with very low power consumption and high data transfer rates [1]. UWB systems are approved for use in bandwidths from 3.1 to 10.6 GHz. Different wideband pulse modulation schemes have been proposed for the UWB transmission systems, including direct-sequence systems and multiband orthogonal frequency division multiplexing systems [2～3].One of the major challenges for both UWB systems is the design of a wideband low noise amplifier (LNA). As the first active component in the receiver chain, the LNA should provide sufficient gain and sufficiently low noise to keep the overall receiver noise figure (NF) as low as possible. In most applications, obtaining wideband input matching, good linearity, and low power consumption is desirable [4]. In addition, gain flatness over the entire frequency range of interest is necessary to meet design specifications.The cost and integration advantages of CMOS technology have motivated extensive studies in high-speed CMOS design for wireless applications. Several CMOS LNAs with wideband characteristic and low power consumption have been proposed in recent years [5～12].To reduce power consumption with adequate voltage gain, the current reuse technique has usually been adopted [13]. Current reused techniques can be classified into two types. One is current reuse topology, which utilizes a two-stage cascade to share the same current source [5～8]. When the DC current is through, the circuit topology is regarded as a cascode structure, which reduces power dissipation by using the same current source. However, it requires a large chip area because additional passive components are needed. Another current reuse technique is inverter topology, which utilizes NMOS and PMOS pairs [9～12]. This technique can achieve the same NF, input impedance and overall effective transconductance with half of the power consumption required for a conventional NMOS transistor.A current reused UWB LNA was previously discussed in [14]. It satisfies low power and compact size requirements, but does not yield adequate voltage gain and bandwidth characteristics for use as an UWB receiver. To overcome these drawbacks, we propose a 1～10 GHz high gain, current reuse UWB LNA that uses T...

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Section: ⅲ Measurement Resultsmentioning

confidence: 99%

Design of a 1~10 GHz High Gain Current Reused Low Noise Amplifier in 0.18 ㎛ CMOS Technology

Seong¹,

Jang²,

Choi³

2011

Journal of electromagnetic engineering and science

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“…The Grover model describes the inductance of each pair based on (10), where every mutual component is individually calculated [7]. While the individual inductance of each pair is determined, the effective inductance of a single layer within an interdigitated P/G network structure is estimated, assuming that the individual inductive lines are in parallel.…”

Section: Comparison and Discussionmentioning

confidence: 99%

“…In practical cases, the existence of different interconnect structures above or below the structure may reduce the accuracy of the proposed model. For structures with large spacing, an interconnect structure below the target structure reduces the accuracy of the estimated inductance [10]. Interdigitated P/G networks, however, are designed with small spacing to exploit the available metal resources; therefore, the accuracy of the effective inductance model is maintained.…”

Section: Inductance Of P/g Distribution Networkmentioning

confidence: 99%

Inductance Model of Interdigitated Power and Ground Distribution Networks

Jakushokas

Friedman

2009

IEEE Trans. Circuits Syst. II

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Abstract-A closed-form expression is presented in this brief to accurately estimate the effective inductance of a single layer within an interdigitated power and ground (P/G) distribution network. Due to the large number of P/G lines in these networks, excessive time is required to calculate the inductance using 3-D simulation tools. The proposed expression is favorably compared with previous models and FastHenry, exhibiting accuracy and computational efficiency. The inductance of a single layer within an interdigitated P/G distribution network is bounded for any number of lines. The error of the proposed expression rapidly decreases with an increasing number of pairs within the network. The upper bound for the error of the proposed model is also determined.Index Terms-Interdigitated structure, power and ground (P/G) network, mutual inductance, self-inductance.

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“…The frequency-variant characteristics, which are substantial at high frequencies, are not included in these RLC models [4]. As an improvement, some models employ frequencyvariant components to characterize the frequency-variant behaviors [5]. As it is known, equivalent circuit models only involve frequency-independent components are much faster and easier to use.…”

Section: Introductionmentioning

confidence: 99%

“…The most internal radiators are made by using printed techniques. These kinds of printed radiators have the characteristics of low profile, low price, and easy to fabricate [2][3][4][5]. Hence, they are extensively used in communication systems.…”

Section: Introductionmentioning

confidence: 99%