2004
DOI: 10.1002/mop.20470
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High‐frequency characterization of coplanar waveguide and equivalent‐circuit modeling of interconnection for mini‐DIL package

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Cited by 2 publications
(2 citation statements)
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“…The parasitic inductances are predicted from the length and the thickness of the bonding wire (L1 = 1 nH) and the package leads (L2 = L3 = 5 nH) where, in brief, longer and thinner one corresponds to the larger inductance which was comparable to the previous analyses [2,3] package to the right one (RF signal OUT) where the RF signal modulates the diode following the signal path. From the SPICE simulation results which were obtained by dividing the power consumed at the diode part by the input signal power (S 21 ), without comprising matching circuit, the 3-dB frequency bandwidth of the package itself is less than 850 MHz and the response curve rapidly changes as the frequency increases.…”
Section: Device Modelling and Resultssupporting
confidence: 65%
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“…The parasitic inductances are predicted from the length and the thickness of the bonding wire (L1 = 1 nH) and the package leads (L2 = L3 = 5 nH) where, in brief, longer and thinner one corresponds to the larger inductance which was comparable to the previous analyses [2,3] package to the right one (RF signal OUT) where the RF signal modulates the diode following the signal path. From the SPICE simulation results which were obtained by dividing the power consumed at the diode part by the input signal power (S 21 ), without comprising matching circuit, the 3-dB frequency bandwidth of the package itself is less than 850 MHz and the response curve rapidly changes as the frequency increases.…”
Section: Device Modelling and Resultssupporting
confidence: 65%
“…To date, many experimental and/or theoretical researches in high bit rate transmission systems offered the way of impedance matching to the laser module for various types of packaging [1,2]. However, conventional method for parameter extraction of laser package was a relatively complicated procedure with measuring and fitting the characteristics of scattering parameters (S-parameters) [3,4]. Furthermore, they had ignored the parasitic components of the packages by inserting just series chip resistor or had used the distributed type elements by designing stub transformers which could be used in specified band applications [5][6][7][8][9].…”
Section: Introductionmentioning
confidence: 99%