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“…Table S3 (supplementary information) summarizes selected values from relevant literature of FoM for different doped SnO 2 thin films along with the doping type, synthesis method, band gap value, electrical resistivity and sheet resistivity, and optical transmittance 53 – 75 . Only two references of undoped films has been found in addition to our present work.…”
Section: Resultsmentioning
confidence: 99%
“…However, the optical band gap was among the highest reported in the literature data which is, as discussed previously, due to the high oxidation state of SnO x . Figure 3 Summary of Figure of Merit values and bang gap as a function of the various references 53 – 75 . …”
In the present work, we report on the microstructural and optoelectronic properties of SnOx thin films deposited by a reactive radio frequency magnetron sputtering. After SnOx growth by sputtering under O2/Ar flow, we have used three different treatment methods, namely (1) as deposited films under O2/Ar, (2) vacuum annealed films ex-situ, and (3) air annealed films ex-situ. Effects of the O2/Ar ratios and the growth temperature were investigated for each treatment method. We have thoroughly investigated the structural, optical, electrical and morphology of the different films by several advanced techniques. The best compromise between electrical conductivity and optical transmission for the use of these SnOx films as an n-type TCO was the conditions O2/Ar = 1.5% during the growth process, at 250 °C, followed by a vacuum post thermal annealing performed at 5 × 10–4 Torr. Our results pointed out clear correlations between the growth conditions, the microstructural and optoelectronic properties, where highly electrically conductive films were found to be associated to larger grains size microstructure. Effects of O2/Ar flow and the thermal annealing process were also analysed and discussed thoroughly.
“…Table S3 (supplementary information) summarizes selected values from relevant literature of FoM for different doped SnO 2 thin films along with the doping type, synthesis method, band gap value, electrical resistivity and sheet resistivity, and optical transmittance 53 – 75 . Only two references of undoped films has been found in addition to our present work.…”
Section: Resultsmentioning
confidence: 99%
“…However, the optical band gap was among the highest reported in the literature data which is, as discussed previously, due to the high oxidation state of SnO x . Figure 3 Summary of Figure of Merit values and bang gap as a function of the various references 53 – 75 . …”
In the present work, we report on the microstructural and optoelectronic properties of SnOx thin films deposited by a reactive radio frequency magnetron sputtering. After SnOx growth by sputtering under O2/Ar flow, we have used three different treatment methods, namely (1) as deposited films under O2/Ar, (2) vacuum annealed films ex-situ, and (3) air annealed films ex-situ. Effects of the O2/Ar ratios and the growth temperature were investigated for each treatment method. We have thoroughly investigated the structural, optical, electrical and morphology of the different films by several advanced techniques. The best compromise between electrical conductivity and optical transmission for the use of these SnOx films as an n-type TCO was the conditions O2/Ar = 1.5% during the growth process, at 250 °C, followed by a vacuum post thermal annealing performed at 5 × 10–4 Torr. Our results pointed out clear correlations between the growth conditions, the microstructural and optoelectronic properties, where highly electrically conductive films were found to be associated to larger grains size microstructure. Effects of O2/Ar flow and the thermal annealing process were also analysed and discussed thoroughly.
“…Until now, many literatures have reported SnO 2 film prepared via ultrasonic spray pyrolysis [23][24][25][26][27]. Chen et al [25] fabricated Ti/SnO 2 -Sb electrode with different nickel concentrations by a spray pyrolysis technique.…”
Ti/SnO2-Sb electrode, which is one of the dimensionally stable anode (DSA) electrodes, offers high specific conductivity, excellent electrocatalytic performance, and great chemical stability. For these reasons, Ti/SnO2-Sb electrode has been extensively studied in the fields of wastewater treatment. This review covers essential research work about the advanced oxidation technology and related DSA electrodes. It gives an overview of preparation methods of SnO2 electrodes, including sol-gel method, dip-coating method, electrodeposition method, chemical vapor deposition method, thermal decomposition method, magnetron sputtering method, and hydrothermal method. To extend service life and improve electrocatalytic efficiency, the review provides comprehensive details about the modification technologies of Ti/SnO2-Sb electrode, such as doping modification, composite modification, and structural modification. In addition, the review discusses common problems in industrial applications of Ti/SnO2-Sb electrode and highlights the promising outlook of Ti/SnO2-Sb electrode.
“…The synthesis method of DSA influences their features. There are many preparation methods of DSA electrodes, including the sol-gel technique [20,21], electrodeposition [22,23], chemical vapor decomposition [24], dip-coating [25], the hydrothermal method [26], sputtering [27], ultrasonic atomization decomposition [28,29], and self-assembly method [30,31].…”
This study investigated the application of an advanced electrooxidation process with three-dimensional tin oxide deposited onto a titanium plate anode, named 3-D Ti/SnO2, for the degradation and mineralization of one of the most important emerging contaminants with cytostatic properties, doxorubicin (DOX). The anode was synthesized using a commercial Ti plate, with corrosion control in acidic medium, used as a substrate for SnO2 deposition by the spin-coating method. X-ray diffraction (XRD) and scanning electron microscopy (SEM) analyses revealed that porous SnO2 was obtained, and the rutile phase of TiO2 was identified as an intermediary substrate onto the Ti plate. The results of CV analysis allowed us to determine the optimal operating conditions for the electrooxidation process conducted under a constant potential regime, controlled by the electron transfer or the diffusion mechanisms, involving hydroxyl radicals. The determination of UV–VIS spectra, total organic carbon (TOC), and chemical oxygen demand (COD) allowed us to identify the degradation mechanism and pathway of DOX onto the 3-D Ti/SnO2 anode. The effective degradation and mineralization of DOX contained in water by the electrooxidation process with this new 3-D dimensionally stable anode (DSA) was demonstrated in this study.
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