High-field transport and hot-electron noise in GaAs from first-principles calculations: Role of two-phonon scattering

Cheng, Peishi; Sun, Jiace; Sun, Shi-Ning; Choi, Alexander Y.; Minnich, Austin J.

doi:10.1103/physrevb.106.245201

Cited by 8 publications

(5 citation statements)

References 100 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The origin of this trend was explained in Ref. [23]. However, both the ab-initio calculation and the semi-analytical model predict the PSD to be nearly independent of electric field and thus fail to predict the characteristic PSD peak at about 3 kVcm −1 .…”

Section: B Drift Velocity and Current Psd At 300 Kmentioning

confidence: 97%

“…The e-ph collision matrix is obtained from perturbation theory in orders of the e-ph interaction strength. For 1ph scattering of non-degenerate electrons, the non-diagonal scattering matrix elements are given by [23]:…”

Section: A Overview Of Formalism For Charge Transport and Noise Prope...mentioning

confidence: 99%

“…In brief, electronic structure and e-ph matrix elements are computed using Density Functional Theory (DFT) and Density Functional Perturbation Theory (DFPT) with Quantum Espresso [30,31] with an 8 × 8 × 8 coarse grid, 72 Ryd plane wave energy cutoff, a relaxed lattice parameter of 5.556 Å, and a non-degenerate carrier concentration of 10 15 cm −3 . Following our previous work [23], we apply a band structure correction for both the Γ valley and the L valley. For the Γ valley, we use a spherically symmetric Kane model band structure [32] with an experimental effective mass of 0.067m e and a non-parabolicity of 0.64 Ryd −1 [2].…”

Section: Computational Details a Ab-initio Calculationsmentioning

confidence: 99%

“…Recent works have extended these calculations to beyond low-field transport and noise properties. [21][22][23][24] In GaAs, it was found that although the qualitative shape of the drift velocity versus electric field curve was predicted correctly compared to experiment, the magnitude of the drift velocity was overpredicted by about 50%. [23] The inclusion of the next-leading-order term of scattering involving two phonons (2ph) yielded a low-field mobility and drift velocity with substantially improved agreement.…”

Section: Introductionmentioning

confidence: 99%

“…[21][22][23][24] In GaAs, it was found that although the qualitative shape of the drift velocity versus electric field curve was predicted correctly compared to experiment, the magnitude of the drift velocity was overpredicted by about 50%. [23] The inclusion of the next-leading-order term of scattering involving two phonons (2ph) yielded a low-field mobility and drift velocity with substantially improved agreement. However, the characteristic nonmonotonic trend of PSD with electric field was not predicted even with the 2ph theory.…”

Section: Introductionmentioning

confidence: 99%

See 4 more Smart Citations

Transport and noise of hot electrons in GaAs using a semi-analytical model of two-phonon polar optical phonon scattering

Sun¹,

Minnich²

2023

Preprint

View full text Add to dashboard Cite

Recent ab-initio studies of electron transport in GaAs have reported that electron-phonon (eph) interactions beyond the lowest order play a fundamental role in charge transport and noise phenomena. Inclusion of the next-leading-order process in which an electron scatters with two phonons was found to yield good agreement for the high-field drift velocity, but the characteristic non-monotonic trend of the power spectral density of current fluctuations (PSD) with electric field was not predicted. The high computational cost of the ab-initio approach necessitated various approximations to the two-phonon scattering term, which were suggested as possible origins of the discrepancy. Here, we report a semi-analytical transport model of two-phonon electron scattering via the Fröhlich mechanism, allowing a number of the approximations in the ab-initio treatment to be lifted while retaining the accuracy to within a few percent. We compare the calculated and experimental transport and noise properties as well as scattering rates measured by photoluminescence experiments. We find quantitative agreement within 15% for the drift velocity and 25% for the Γ valley scattering rates, and agreement with the Γ − L intervalley scattering rates within a factor of two. Considering these results and prior studies of current noise in GaAs, we conclude that the most probable origin of the non-monotonic PSD trend versus electric field is the formation of space charge domains rather than intervalley scattering as has been assumed.

show abstract

Section: B Drift Velocity and Current Psd At 300 Kmentioning

confidence: 97%

Section: A Overview Of Formalism For Charge Transport and Noise Prope...mentioning

confidence: 99%

Section: Computational Details a Ab-initio Calculationsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Transport and noise of hot electrons in GaAs using a semi-analytical model of two-phonon polar optical phonon scattering

Sun¹,

Minnich²

2023

Preprint

View full text Add to dashboard Cite

show abstract

High-field charge transport and noise in p -Si from first principles

Catherall

Minnich

2023

Phys. Rev. B

Self Cite

View full text Add to dashboard Cite

The parameter-free computation of charge transport properties of semiconductors is now routine owing to advances in the ab-initio description of the electron-phonon interaction. Many studies focus on the low-field regime in which the carrier temperature equals the lattice temperature and the current power spectral density (PSD) is proportional to the mobility. The calculation of high-field transport and noise properties offers a stricter test of the theory as these relations no longer hold, yet few such calculations have been reported. Here, we compute the high-field mobility and PSD of hot holes in silicon from first principles at temperatures of 77 and 300 K and electric fields up to 20 kV cm -1 along various crystallographic axes. We find that the calculations quantitatively reproduce experimental trends including the anisotropy and electric-field dependence of hole mobility and PSD. The experimentally observed rapid variation of energy relaxation time with electric field at cryogenic temperatures is also correctly predicted. However, as in low-field studies, absolute quantitative agreement is in general lacking, a discrepancy that has been attributed to inaccuracies in the calculated valence band structure. Our work highlights the use of high-field transport and noise properties as a rigorous test of the theory of electron-phonon interactions in semiconductors.

show abstract

Transport and noise of hot electrons in GaAs using a semianalytical model of two-phonon polar optical phonon scattering

Sun

Minnich

2023

Phys. Rev. B

View full text Add to dashboard Cite

High-field transport and hot-electron noise in GaAs from first-principles calculations: Role of two-phonon scattering

Cited by 8 publications

References 100 publications

Transport and noise of hot electrons in GaAs using a semi-analytical model of two-phonon polar optical phonon scattering

Transport and noise of hot electrons in GaAs using a semi-analytical model of two-phonon polar optical phonon scattering

High-field charge transport and noise in p -Si from first principles

Transport and noise of hot electrons in GaAs using a semianalytical model of two-phonon polar optical phonon scattering

Contact Info

Product

Resources

About