High Field Magnetoresistance and de Haas–van Alphen Effect in LaRu<sub>2</sub>Al<sub>10</sub>

Sakoda, Masahito; Tanaka, Shuhei; Matsuoka, Eiichi; Sugawara, Hitoshi; Harima, Hisatomo; Honda, Fuminori; Settai, Rikio; Ōnuki, Yoshichika; Matsuda, Tatsuma D.; Haga, Yoshinori

doi:10.1143/jpsj.80.084716

Cited by 10 publications

(6 citation statements)

References 13 publications

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“…The residual resistivity ρ 0 and the residual resistivity ratio RRR are 6 µΩ·cm and 18 for LaRu 2 Al 10 , and 7 µΩ·cm and 15 for PrRu 2 Al 10 , respectively. The A value assuming ρ = ρ 0 + AT 2 for LaRu 2 Al 10 below 26 K is A ∼ 3 × 10 −4 µΩ·cm/K 2 , which corresponds to the Sommerfeld coefficient of γ ∼ 5 mJ/K 2 ·mol from the Kadowaki-Woods relation [13], indicating that the mass enhancement is not large in this material, that is consistent with the light effective mass of ∼ 1m 0 (m 0 is the rest mass of an electron) obtained from the de Haas-van Alphen effect experiment [14]. The ρ 0 of CeRu 2 Al 10 is estimated to be about 4 mΩ·cm (the accuracy is 20∼30% due to the irregular shape of sample), which Figure 2 (b) shows the temperature dependences of the Hall coefficient R H in LaRu 2 Al 10 below 30 K for the magnetic field H (= 1 T) along the a-axis.…”

Section: Resultssupporting

confidence: 79%

Single Crystal Growth and Transport Properties of RRu₂Al₁₀(R = La and Pr)

et al. 2012

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We have succeeded in growing single crystals of RRu 2 Al 10 (R = La and Pr), and measured their electrical resistivity and Hall effect to gain the deeper insight of the physical properties of CeRu 2 Al 10 which exhibits an unusual long-range order (LRO) below T 0 ∼ 27 K. The temperature dependences of the electrical resistivity of both LaRu 2 Al 10 and PrRu 2 Al 10 show the typical metallic behavior without any phase transition. The Hall effect measurements reveal that the carrier number of CeRu 2 Al 10 in the LRO region is about 30 times smaller than that of LaRu 2 Al 10 , indicating highly different electronic states between these compounds below T 0 .

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Section: Resultssupporting

confidence: 79%

Single Crystal Growth and Transport Properties of RRu₂Al₁₀(R = La and Pr)

et al. 2012

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“…Note, however, that it is not a simple problem to connect this common q vector to the Fermi surface structure reported for LaRu 2 Al 10 since the Fermi surface does not seem to possess any particular nesting property. 10) In any case, the (0, 1, 0) propagation vector of CeT 2 Al 10 is unusual and must be strongly associated with the Kondo semiconducting state caused by strong c-f hybridization.…”

Section: Discussionmentioning

confidence: 95%

“…This is finite at the same q vector as the magnetic cycloid; note that it is not ferrotoroidic. The geometrical factor of the E1-E2 resonance for the rank-1 tensor is expressed as (10) and the scalar product with the structure factor gives the scattering amplitude. In Fig.…”

Section: Local Noncentrosymmetry and Toroidal Momentmentioning

confidence: 99%

Temperature-Dependent Cycloidal Magnetic Structure in GdRu₂Al₁₀Studied by Resonant X-ray Diffraction

et al. 2017

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We have performed resonant X-ray diffraction experiments on the antiferromagnet GdRu2Al10 and have clarified that the magnetic structure in the ordered state is cycloidal with the moments lying in the bc plane and propagating along the b axis. The propagation vector shows a similar temperature dependence to the magnetic order parameter, which can be interpreted as being associated with the gap opening in the conduction band and the resultant change in the magnetic exchange interaction. Although the S = 7/2 state of Gd is almost isotropic, the moments show slight preferential ordering along the b axis. The c axis component in the cycloid develops with decreasing temperature through a tiny transition in the ordered phase. We also show that the scattering involves the σ-σ ′ process, which is forbidden in normal E1-E1 resonance of magnetic dipole origin. We discuss the possibility of the E1-E2 resonance originating from a toroidal moment due to the lack of inversion symmetry at the Gd site. The spin-flop transition in a magnetic field is also described in detail.

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“…The origin of the large CEF in CeT 2 Al 10 was ascribed to the large c-f hybridization [1,31,[55][56][57][58][59]. (8) The ground state of CeRu 2 Al 10 is metallic, with small Fermi surfaces [60][61][62].…”

Section: Introductionmentioning

confidence: 99%

Pr- and La-doping effects on the magnetic anisotropy in the antiferromagnetic phase of Kondo semiconductorCeRu2Al10

et al. 2015

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We have studied the Pr-and La-doping effects on the magnetic anisotropy in the antiferro-magnetic (AFM) phase of CeRu 2 Al 10 . The crystalline electric field (CEF) splitting in PrRu 2 Al 10 was found to be as large as ∼800 K with a singlet ground state. In Ce 1−x Pr x Ru 2 Al 10 , the CEF level scheme of the Pr ion is not changed with x. The AFM moment (m AF ) is rotated from c to b axis in both systems at x sr c ∼ 0.03 and ∼0.07 for Ln=Pr and La, respectively. As the ionic radius of La and Pr is larger and smaller than that of Ce, respectively, these results indicate that the chemical pressure effect is not associated with the rotation of m AF , but is caused by the suppression of the c-f hybridization originating from the decrease of 4f electrons of Ce ions by Ce-site substitution. Since a small amount of Pr or La doping changes easily the magnetization easy axis of all the moments on Ce sites, the origin of the magnetic anisotropy is not the local single ion effect but the bandlike effect through the anisotropic c-f hybridization. The magnetic phase diagrams of Ce 1−x Ln x Ru 2 Al 10 indicate that above x sr c , the AFM order with m AF b continues to exist up to x c , which is ∼0.4 and ∼0.6 in Ln=Pr and Ln=La, respectively. This indicates that even in the sample with an AFM transition temperature (T 0 ) near x c , the anisotropic c-f hybridization dominates the AFM order. A large positive transverse magnetoresistance is seen below T 0 , but a very small one above T 0 . Together with the results of Hall resistivity and the observation of Shubnikov-de Haas oscillation, we propose that there exist large Fermi surfaces above T 0 and small ones below T 0 . A gap is opened by the AFM order on almost the area of the large Fermi surface, and small Fermi surfaces are constructed below T 0 , although we do not know the mechanism, which might be specific to the AFM order in Kondo semiconductors. The largest suppression of the magnetic scattering below T 0 is observed for the current I a and the smallest one for I b. This anisotropy may be associated with the anisotropic c-f hybridization, which may contribute to the anisotropic magnetic scattering of the conduction electron below T 0 .

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High Field Magnetoresistance and de Haas–van Alphen Effect in LaRu₂Al₁₀

Cited by 10 publications

References 13 publications

Single Crystal Growth and Transport Properties of RRu₂Al₁₀(R = La and Pr)

Single Crystal Growth and Transport Properties of RRu₂Al₁₀(R = La and Pr)

Temperature-Dependent Cycloidal Magnetic Structure in GdRu₂Al₁₀Studied by Resonant X-ray Diffraction

Pr- and La-doping effects on the magnetic anisotropy in the antiferromagnetic phase of Kondo semiconductorCeRu2Al10

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High Field Magnetoresistance and de Haas–van Alphen Effect in LaRu2Al10

Cited by 10 publications

References 13 publications

Single Crystal Growth and Transport Properties of RRu2Al10(R = La and Pr)

Single Crystal Growth and Transport Properties of RRu2Al10(R = La and Pr)

Temperature-Dependent Cycloidal Magnetic Structure in GdRu2Al10Studied by Resonant X-ray Diffraction

Pr- and La-doping effects on the magnetic anisotropy in the antiferromagnetic phase of Kondo semiconductorCeRu2Al10

Contact Info

Product

Resources

About

High Field Magnetoresistance and de Haas–van Alphen Effect in LaRu₂Al₁₀

Single Crystal Growth and Transport Properties of RRu₂Al₁₀(R = La and Pr)

Single Crystal Growth and Transport Properties of RRu₂Al₁₀(R = La and Pr)

Temperature-Dependent Cycloidal Magnetic Structure in GdRu₂Al₁₀Studied by Resonant X-ray Diffraction