High-field magnetoluminescence of ZnSe quantum wires

Parthier, L.; Luther, S.; Portugall, O.; Ortenberg, M. von; Uchida, K.; Kunimatsu, H.; Miura, N.

doi:10.1016/s0022-0248(98)80072-9

Cited by 8 publications

(5 citation statements)

References 5 publications

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“…MBE or MOVPE) such as Stranski-Krastanov growth [10][11][12][13][14][15][16][17][18] or growth on patterned substrates. [19,20] There are also various fabrication techniques relying on nucleation and precipitation processes either in glass matrices (ranging from RF-sputtering techniques [21][22][23][24] to sol-gel methods [25][26][27][28] ) or in solutions [29,30] (e.g. TOP/TOPO synthesis).…”

Section: Introductionmentioning

confidence: 99%

Comparison of the Magnetic and Optical Properties of Wide‐Gap (II,Mn)VI Nanostructures Confined in Mesoporous Silica

et al. 2005

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Arrays of highly ordered Cd 1-x Mn x Se, Cd 1-x Mn x S, and Zn 1-xMn x S nanoparticles with x ranging from 0.01 to 0.3 and with lateral dimensions of 3, 6, and 9 nm were synthesised within mesoporous SiO 2 host structures of the MCM-41 and SBA-15 type. The hexagonal symmetry of these arrays (space group p6m) and the high degree of order were confirmed by X-ray diffraction and transmission electron microscope studies. Physisorption measurements show the progressive filling of the pores of the SiO 2 host structures, while photoluminescence excitation (PLE) and electron paramagnetic resonance (EPR) studies confirm the good crystalline quality of the incorporated (II,Mn)VI guest species. The effects of the reduction of the lateral dimensions on the electronic properties of the diluted magnetic semiconductor were studied by PLE spectroscopy. Due to the quantum confinement of the excitons in the nanostructures an increase of the direct band gap

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Section: Introductionmentioning

confidence: 99%

Comparison of the Magnetic and Optical Properties of Wide‐Gap (II,Mn)VI Nanostructures Confined in Mesoporous Silica

et al. 2005

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“…Far less work has been carried out on magnetic semiconductor nanostructures 39–45. For metal structures, a high degree of order could only be obtained so far by combining lithographic pattern definition with epitaxial semiconductor‐growth techniques, either by growing structures on patterned substrates42 or by post‐growth patterning and etching of the epitaxial semiconductor layers 45. However, the smallest lateral sizes achievable by these techniques are much larger than 10 nm.…”

Section: Introductionmentioning

confidence: 99%

Ordered Arrays of II/VI Diluted Magnetic Semiconductor Quantum Wires: Formation within Mesoporous MCM-41 Silica

Brieler¹,

Fröba²,

Chen³

et al. 2002

Chem. Eur. J.

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We present a novel way of synthesising highly ordered arrays of hollow Cd(1-x)Mn(x)S quantum wires with lateral dimensions of 3-4 nm separated by 1-2 nm SiO2 barriers by forming Cd(1-x)Mn(x)S (0 < or = x < or = 1) semiconductors inside the pore system of mesoporous MCM-41 SiO2 host structures. X-ray diffraction and transmission electron microscopy (TEM) studies reveal the hexagonal symmetry of these arrays (space group p6m) and confirm the high degree of order. Physisorption measurements show the filling of the pores of the MCM-41 SiO2. The X-ray absorption near-edge structure (XANES), extended X-ray absorption fine structure (EXAFS), electron paramagentic resonance (EPR), and Raman studies confirm the good crystalline quality of the incorporated (Cd,Mn)S guest. The effects of reducing the lateral dimensions on the magnetic and electronic properties of the diluted magnetic semiconductor were studied by photoluminescence (PL) and PL excitation spectroscopy and by SQUID and EPR measurements in the temperature range 2-400 K. Due to the quantum confinement of the excitons in the wires, an increase of about 200 meV in the direct band gap was observed. In addition, the p-d hybridisation-related bowing of the band gap as a function of Mn concentration in the wires is much stronger than in the bulk. This effect is related to the increase in the band gap due to quantum confinement, which shifts the p-like valence band edge closer to the 3d-related states of Mn in the valence band. Thus, the p-d hybridisation and the strength of the band gap bowing are increased. Compared to bulk (II,Mn)VI compounds, antiferromagnetic coupling between the magnetic moments of the Mn2+ ions is weaker. For the samples with high Mn concentrations (x > 0.8) this leads to a suppression of the phase transition of the Mn system from paramagnetic to antiferromagnetic. This effect can be explained by the fact that the lateral dimensions of the wires are smaller than the magnetic length scale of the antiferromagnetic ordering.

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“…Dilute Magnetic Semiconductors (DMS) in which magnetic ions substitute cations of the host semiconducting material are assumed to be ideal systems for spintronics [1][2][3]. DMSs based on II-VI and III-V compound semiconductors have attracted much attention in recent years because they provide material foundation for semiconductor spintronic devices.…”

Section: Introductionmentioning

confidence: 99%

Ferromagnetic Domain Behaviors in Mn doped ZnO Film

Soundararajan¹,

Santoyo-Salazar²,

Ko³

et al. 2011

Journal of Magnetics

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Mn doped ZnO films were prepared on Si (100) substrates using sol-gel method. The prepared films were annealed at 550ºC for decomposition and oxidation of the precursors. XRD analysis revealed the presence of ZnMnO hexagonal wurtzite phase along with the presence of small quantity of ZnMn 2 O 3 secondary phase and poor crystalline nature. The 2D, 3D views of magnetic domains and domain profiles were obtained using magnetic force microscopy at room temperature. Rectangular shaped domains with an average size of 4.16 nm were observed. Magnetic moment measurement as a function of magnetic field was measured using superconducting quantum interference device (SQUID) magnetometry at room temperature. The result showed the ferromagnetic hysteresis loop with a curie temperature higher than 300 K.

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High-field magnetoluminescence of ZnSe quantum wires

Cited by 8 publications

References 5 publications

Comparison of the Magnetic and Optical Properties of Wide‐Gap (II,Mn)VI Nanostructures Confined in Mesoporous Silica

Comparison of the Magnetic and Optical Properties of Wide‐Gap (II,Mn)VI Nanostructures Confined in Mesoporous Silica

Ordered Arrays of II/VI Diluted Magnetic Semiconductor Quantum Wires: Formation within Mesoporous MCM-41 Silica

Ferromagnetic Domain Behaviors in Mn doped ZnO Film

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