High-field effects in silicon nitride passivated GaN MODFETs

Sahoo, Dipak Kumar; Lal, R.; Kim, Hyungtak; Tilak, V.; Eastman, L.F.

doi:10.1109/ted.2003.813221

Cited by 62 publications

(29 citation statements)

References 14 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…6b, we can observe that the knee voltage for a device with a Ir gate, determined for a V GS of 2 V, increases from 4.1 up to 6.5 V before and after 164 h of electrical stress. In the same time, we have observed a collapse of around 11% for the drain current after a stress time of 164 h. The same observation was also reported in the literature but in other stress conditions [26,27]. However, 50 h after having stopped this aging stress, we have observed that the knee voltage and the drain current values reached their initial values for the two metal contacts.…”

Section: Resultssupporting

confidence: 89%

Comparative studies of Pt and Ir schottky contacts on undoped Al0.36Ga0.64N

Guhel

Boudart²,

Delos³

et al. 2006

Microelectronics Reliability

View full text Add to dashboard Cite

Section: Resultssupporting

confidence: 89%

Comparative studies of Pt and Ir schottky contacts on undoped Al0.36Ga0.64N

Guhel

Boudart²,

Delos³

et al. 2006

Microelectronics Reliability

View full text Add to dashboard Cite

“…13 On the other hand, a clear understanding between trap behaviours and device reliability is still highly desirable. [14][15][16][17][18][19][20] It is reported that deep-level-transient-spectroscopy (DLTS) can assist in the quantitative analysis of the deep level defects in AlGaN/GaN HEMTs, which requires a well-controlled temperature cabinet with a wide temperature scope (dozens of K to hundreds of K). 21,22 In this work, we use a room-temperature transient capacitance measurement to study the trap behaviours in AlGaN/GaN HEMTs using 6-inches GaN-on-Si substrate.…”

Section: Introductionmentioning

confidence: 99%

Trap behaviours characterization of AlGaN/GaN high electron mobility transistors by room-temperature transient capacitance measurement

et al. 2016

View full text Add to dashboard Cite

In this paper, the trap behaviours in AlGaN/GaN high electron mobility transistors (HEMTs) are investigated using transient capacitance measurement. By measuring the transient gate capacitance variance (ΔC) with different pulse height, the gate pulse induced trap behaviours in SiNX gate dielectric layer or at the SiNX/AlGaN interface is revealed. Based on the results, a model on electron traps in AlGaN/GaN HEMTs is proposed. The threshold voltage (Vth) instability in AlGaN/GaN HEMTs is believed to be correlated with the presence of these traps in SiNX gate dielectric layer or at the SiNX/AlGaN interface. Furthermore, trap density before and after step-stress applied on drain electrode is quantitatively analyzed based on ΔC measurement.

show abstract

“…2) Degradation of DC output characteristics after long-or short-term stress at high drain voltage [31]- [34]. On-state and off-state stress cycles have been compared in [34], [35].…”

Section: ) Drain Current Compression Under Large-signal Microwave Opmentioning

confidence: 99%

Reliability of GaN-Based HEMT devices

Menozzi

2008

2008 Conference on Optoelectronic and Microelectronic Materials and Devices

View full text Add to dashboard Cite

This paper reviews the main problems characterizing the past and present of GaN-based HEMT reliability. Some general considerations on the maturity of this technology and published lifetesting extrapolations are followed by a review of physical degradation mechanisms, subdivided between temperature-activated and electrical ones, the latter generally linked with the much-debated "current collapse". The paper ends with some conclusive remarks on what has been achieved and what still lies ahead.

show abstract

High-field effects in silicon nitride passivated GaN MODFETs

Cited by 62 publications

References 14 publications

Comparative studies of Pt and Ir schottky contacts on undoped Al0.36Ga0.64N

Comparative studies of Pt and Ir schottky contacts on undoped Al0.36Ga0.64N

Trap behaviours characterization of AlGaN/GaN high electron mobility transistors by room-temperature transient capacitance measurement

Reliability of GaN-Based HEMT devices

Contact Info

Product

Resources

About