High field-effect mobility amorphous InGaZnO transistors with aluminum electrodes

Na, Jong H.; Kitamura, M.; Arakawa, Yasuhiko

doi:10.1063/1.2969780

Cited by 151 publications

(98 citation statements)

References 11 publications

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“…[ 34,35 ] After the evaporation process performed in vacuum at typical pressure of 5 × 10 −9 atm, the TFT devices exhibit high conductivity, a Figure S6a, Supporting Information) owing to oxygen vacancies in the In 2 O 3 fi lm that are understood to increase the charge-carrier concentration. [ 2,3 ] The depletion of oxygen from the semiconductor can be due to the evaporated Al-electrodes scavenging oxygen from the underlying In 2 O 3 fi lm.…”

Section: Doi: 101002/adma201502569mentioning

confidence: 99%

Flexography‐Printed In₂O₃ Semiconductor Layers for High‐Mobility Thin‐Film Transistors on Flexible Plastic Substrate

et al. 2015

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uniform, continuous and dense layers and is thus more suitable for printed TFTs with larger channel dimensions. Several precursor routes for solution-processed metal-oxide semiconductor layers based on metal alkoxides, [ 14,15 ] and on metal salts such as acetates, nitrates, and chlorides have been reported. [ 16,17 ] Precursors based on metal nitrates have been shown to convert into metal oxides generally at lower temperatures than acetateor chloride-based precursors. [ 17,18 ] In contrast to metal alkoxides, metal nitrates are less sensitive to air humidity and can be processed via an aqueous precursor route. [ 7 ] Based on these advantages, metal nitrates show promise as potential precursor materials for printed low-temperature-processed metal-oxide semiconductors. A large amount of work has concentrated on lowering the conversion temperature of the precursor solutions to semiconducting metal-oxide layers. Functional TFTs have been obtained at ≈200 °C or below (1) via the careful design of precursor chemistry utilizing metal alkoxides with controlled hydrolysis, [ 14,15 ] combustion process, [ 11,19 ] or the addition of oxidizing agents, [ 20 ] (2) via the use of additional energy in conversion such as various wavelengths of UV light, [ 8,15,21 ] or microwaves, [ 22 ] or (3) by employing conditions during annealing that promote effi cient precursor conversion such as ozone or vacuum. [ 6,7,20 ] After the fi rst report on inkjet-printed metal oxide layers from metal chloride precursors by Lee et al. in 2007, [ 16 ] the deposition of metal-oxide semiconductor layers for TFTs has been successfully performed via several printing techniques. [ 4 ] In addition to inkjet-printing, [ 12,16,17,19,23 ] metaloxide TFTs have been fabricated with electrodynamic-jet, [ 24 ] spray pyrolysis, [ 9 ] gravure (glass substrate, 550 °C annealing), [ 25 ] and fl exographic printing (Si wafer, 450 °C annealing). [ 26 ] The inkjet, electrodynamic jet, and spray pyrolysis techniques are typically utilized in noncontact sheet-to-sheet batch processes while the contact gravure and fl exographic printing are readily available also as continuous high-throughput roll-to-roll processes. Also novel combinations of conventional vacuum processes and techniques well known from the fi eld of printing have been proposed to prepare metal-oxide TFTs on fl exible substrates such as inkjet-printed growth inhibitors for the patterning of atomic-layer-deposited (ALD) metal-oxide layers, [ 27 ] and transferring of vacuum-processed functional TFTs from rigid to fl exible substrates by a roll-transfer method. [ 28 ] The previous results clearly indicate the challenges in the processability of materials that need to be overcome to enable large-area electronics fabrication using the industrial high-throughput additive printing processes on fl exible low-cost substrates.In this work, for the fi rst time, the metal-oxide TFT fabrication process was performed on fl exible substrate using process technologies that are roll-to-roll-compatible and industrially...

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Section: Doi: 101002/adma201502569mentioning

confidence: 99%

Flexography‐Printed In₂O₃ Semiconductor Layers for High‐Mobility Thin‐Film Transistors on Flexible Plastic Substrate

et al. 2015

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“…In most of the studies, the RF sputter deposition method has been utilized to deposit a-IGZO and gate oxide. The gate insulator TiSiO 2 of thickness 132 nm sandwiched between SiO 2 layers has been used by Na et al [2]. Aluminum has been used as contact metal, while the substrate of n-type Si has been used.…”

Section: Introductionmentioning

confidence: 99%

Room temperature fabrication Oxide TFT with Y2O3 as a gate oxide and Mo contact

Bobade

Shin

Cho

et al. 2009

Applied Surface Science

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“…[7] investigated the effects of S/D series resistance and transfer length on a-IGZO TFTs. So far, indium tin oxide (ITO), Au, Al, indium zinc oxide (IZO), and Pt/Ti were used as S/D electrodes for a-IGZO TFTs [5,8,9]. Although oxide based electrodes, such as ITO and IZO electrodes allow fully transparent TFTs, their large electron affinity of the oxide electrodes (and Au) causes non-ohmic behaviors in the linear regime of output characteristics due to the formation of the Schottky-like barrier between the electrodes and the a-IGZO films [9].…”

Section: Introductionmentioning

confidence: 99%

Improved Electrical Properties of Indium Gallium Zinc Oxide Thin-Film Transistors by AZO/Ag/AZO Multilayer Electrode

No¹,

Yang²,

Park³

et al. 2013

Journal of Sensor Science and Technology

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This is an Open Access article distributed under the terms of the Creative Commons Attribution Non-Commercial License(http://creativecommons.org/licenses/bync/3.0)which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.Journal of Sensor Science and Technology Vol. 22, No. 2 (2013) AbstractWe fabricated an a-IGZO thin film transistor (TFT) with AZO/Ag/AZO transparent multilayer source/drain contacts by rf magnetron sputtering. a-IGZO TFT with AZO/Ag/AZO multilayer S/D electrodes (W/L = 400/50 µm) showed a subs-threshold swing of 3.78 V/dec, a minimum off-current of 10 -12 A, a threshold voltage of 0.41 V, a field effect mobility of 10.86 cm 2 /Vs, and an on/off ratio of 9 10 9 . From the ultraviolet photoemission spectroscopy, it was revealed that the enhanced electrical performance resulted from the lowering of the Schottky barrier between a-IGZO and Ag due to the insertion of an AZO layer and thus the AZO/Ag/AZO multilayer would be very appropriate for a promising S/D contact material for the fabrication of high performance TFTs.

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High field-effect mobility amorphous InGaZnO transistors with aluminum electrodes

Cited by 151 publications

References 11 publications

Flexography‐Printed In₂O₃ Semiconductor Layers for High‐Mobility Thin‐Film Transistors on Flexible Plastic Substrate

Flexography‐Printed In₂O₃ Semiconductor Layers for High‐Mobility Thin‐Film Transistors on Flexible Plastic Substrate

Room temperature fabrication Oxide TFT with Y2O3 as a gate oxide and Mo contact

Improved Electrical Properties of Indium Gallium Zinc Oxide Thin-Film Transistors by AZO/Ag/AZO Multilayer Electrode

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High field-effect mobility amorphous InGaZnO transistors with aluminum electrodes

Cited by 151 publications

References 11 publications

Flexography‐Printed In2O3 Semiconductor Layers for High‐Mobility Thin‐Film Transistors on Flexible Plastic Substrate

Flexography‐Printed In2O3 Semiconductor Layers for High‐Mobility Thin‐Film Transistors on Flexible Plastic Substrate

Room temperature fabrication Oxide TFT with Y2O3 as a gate oxide and Mo contact

Improved Electrical Properties of Indium Gallium Zinc Oxide Thin-Film Transistors by AZO/Ag/AZO Multilayer Electrode

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Product

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Flexography‐Printed In₂O₃ Semiconductor Layers for High‐Mobility Thin‐Film Transistors on Flexible Plastic Substrate

Flexography‐Printed In₂O₃ Semiconductor Layers for High‐Mobility Thin‐Film Transistors on Flexible Plastic Substrate