High-fidelity optical quantum gates based on type-II double quantum dots in a nanowire

Taherkhani, Masoomeh; Willatzen, Morten; Denning, Emil Vosmar; Protsenko, Igor E.; Gregersen, Niels

doi:10.1103/physrevb.99.165305

Cited by 9 publications

(5 citation statements)

References 45 publications

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“…Control of such structures at the ML level is actually necessary for promising applications. [44][45][46] Note that if group V sidewall diffusion contributed to droplet refill, [35] this would only require stems longer than the corresponding diffusion length, in addition to constant NW and droplet radii. [36,47] We showed that the reason for this quasideterministic growth regime is the compensation between the propagation time and preceding waiting time, expected to occur when there is never enough group V atoms in the catalyst particle to produce a full ML at nucleation.…”

Section: Discussionmentioning

confidence: 99%

Statistics of Nucleation and Growth of Single Monolayers in Nanowires: Towards a Deterministic Regime

Panciera

Harmand

2022

Physica Rapid Research Ltrs

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The vapor–liquid–solid growth of semiconductor nanowires proceeds via the sequential nucleation and extension of biatomic monolayers at the interface between the solid wire and a liquid catalyst nanodroplet. In the case of III–V compounds, this mother phase contains only a small concentration of the volatile group V atoms. The growth regime where there is not enough such atoms available in the liquid at nucleation to complete a whole monolayer is studied experimentally and theoretically. Each monolayer cycle then consists in the rapid formation of a partial monolayer, followed by a slower propagation stage and by a waiting time preceding the next nucleation. The propagation and waiting times of long sequences of monolayers are measured in situ in a transmission electron microscope at three growth temperatures, in a single GaAs nanowire. The process is modeled and the statistics of the characteristic times are computed numerically and analytically. At low temperature, the weakness of group V desorption from the liquid should lead to a constant total monolayer cycle time, despite the stochasticity of the nucleation events. The modeling of the experiments yields values of several crucial growth parameters and provides guidance for the growth of nanowires in a deterministic regime.

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Section: Discussionmentioning

confidence: 99%

Statistics of Nucleation and Growth of Single Monolayers in Nanowires: Towards a Deterministic Regime

Panciera

Harmand

2022

Physica Rapid Research Ltrs

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“…The interaction amplitude depends on the atomic quantum number, and in addition for the Förster resonances the interaction strength tuned by an applied electric field provides a great control flexibility [7,22,23,35]. Similar interactions occur also in artificial atoms, as the ground state interactions in double quantum dots in a nanowire [40].…”

Section: Introductionmentioning

confidence: 95%

Atomic interactions for qubit-error compensations

Delvecchio,

Petiziol,

Arimondo

et al. 2021

Preprint

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Experimentalimperfections induce phase and population errors in quantum systems. We present a method to compensate unitary phase errors affecting also the population of the qubit states. This is achieved through the interaction of the target qubit with an additional control qubit. We show that our approach can be applied to two and three-level qubit implementations with comparable compensation efficiency.

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“…In our previous work 18 , we have shown that GaAs QDs can be embedded in AlGaAs nanowires during bottom-up growth in a molecular beam epitaxy reactor, adding new possibilities to the system. For instance, any number of emitters can be precisely positioned within the same nanowire, making the nanowire QDs structure an ideal platform for advanced multi-qubit devices 19,20 that are not possible today with their bulk counterparts. Also, the precise size and position of each emitter can be controlled during growth, enabling tuning of the emission wavelength and fabrication of complex devices.…”

Section: Introductionmentioning

confidence: 99%

Resonant excitation of nanowire quantum dots

et al. 2020

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GaAs quantum dots in nanowires are one of the most promising candidates for scalable quantum photonics. They have excellent optical properties, can be frequency-tuned to atomic transitions, and offer a robust platform for fabrication of multi-qubit devices that promise to unlock the full technological potential of quantum dots. Coherent resonant excitation is necessary for virtually any practical application because it allows, for instance, for on-demand generation of single and entangled photons, photonic clusters states, and electron spin manipulation. However, emission from nanowire structures under this excitation scheme has never been demonstrated. Here we show, for the first time, biexciton–exciton cascaded emission via resonant two-photon excitation and resonance fluorescence from an epitaxially grown GaAs quantum dot in an AlGaAs nanowire. We also report that resonant excitation schemes, combined with above-bandgap excitation, can be used to clean and enhance the emission of nanowire quantum dots.

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High-fidelity optical quantum gates based on type-II double quantum dots in a nanowire

Cited by 9 publications

References 45 publications

Statistics of Nucleation and Growth of Single Monolayers in Nanowires: Towards a Deterministic Regime

Statistics of Nucleation and Growth of Single Monolayers in Nanowires: Towards a Deterministic Regime

Atomic interactions for qubit-error compensations

Resonant excitation of nanowire quantum dots

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