2022
DOI: 10.1103/physrevlett.129.100502
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High-Fidelity Ion State Detection Using Trap-Integrated Avalanche Photodiodes

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Cited by 16 publications
(9 citation statements)
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“…Single qubit rotations and two-qubit entangling gates have been implemented using laser beams delivered through waveguides [475,476], showing extreme robustness against vibrational noises. Furthermore, the integration of single photon detectors on chip traps has been successfully demonstrated recently [407][408][409], showing a scalable way for high-fidelity readout of multiple ion qubits on large-scale quantum processors. Conventional analogue voltage sources are also integrated on-chip [477], enabling an expandable approach to control numerous ion trap electrodes and laying the technical foundation for circuit integration in large-scale QCCD architectures.…”
Section: Trapped-ion Qubitsmentioning
confidence: 99%
See 1 more Smart Citation
“…Single qubit rotations and two-qubit entangling gates have been implemented using laser beams delivered through waveguides [475,476], showing extreme robustness against vibrational noises. Furthermore, the integration of single photon detectors on chip traps has been successfully demonstrated recently [407][408][409], showing a scalable way for high-fidelity readout of multiple ion qubits on large-scale quantum processors. Conventional analogue voltage sources are also integrated on-chip [477], enabling an expandable approach to control numerous ion trap electrodes and laying the technical foundation for circuit integration in large-scale QCCD architectures.…”
Section: Trapped-ion Qubitsmentioning
confidence: 99%
“…(f) On-chip detection of ion qubit. Several groups have been successfully demonstrated integrated single photon detector on the fabricated surface traps[407][408][409].…”
mentioning
confidence: 99%
“…17 Other demonstrations of SPAD-integrated surface traps soon followed. 18 The optically sensitive area, the anode, of the SPAD is created by implanting a high concentration of Boron in the N-doped silicon. To control the edge breakdown in the SPADs, an area around the anode is implanted with a lower concentration of Boron called the "guard ring".…”
Section: Single-photon Avalanche Detectorsmentioning
confidence: 99%
“…The simultaneous requirements on field of view, numerical aperture, off-axis aberration, magnification, and physical dimensions of the collection optics present challenges when scaling this architecture to large numbers of ions. Applications such as scaled trapped-ion quantum computing [3][4][5] may benefit from the integration of multiple photon detectors for fluorescence detection into the ion trap itself, without requiring optical elements for imaging [6][7][8][9] .…”
mentioning
confidence: 99%
“…Trap-integrated SPADs also suffer from the same rf pickup effects, however, and have much higher dark count rates and lower quantum efficiencies than SNSPDs. SPAD output pulses also cause more heating of the ion motion than SNSPD pulses due to their larger amplitude [7][8][9] .…”
mentioning
confidence: 99%