High-f/sub max/ AlGaAs/InGaAs and AlGaAs/GaAs HBT's with p/sup +//p regrown base contacts

Shimawaki, H.; Amamiya, Y.; Furuhata, Naoki; Honjo, Kazuhiko

doi:10.1109/16.464425

Cited by 52 publications

(10 citation statements)

References 31 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…High-speed GaAs-based HBTs [2] were adopted as active devices, because of their matured production technology. The HBT has an extrinsic base layer formed by epitaxial regrowth to reduce the base resistance and an InGaAs graded base layer to reduce the base transit time.…”

Section: Ingap-hbt Technologymentioning

confidence: 99%

“…We previously reported on analog and digital ICs (TIA, differential amplifier, and decision circuit) [1] for 40-Gbps systems using a matured GaAs-based InGaP HBT technology [2]. The first purpose of this paper is to develop other key ICs that utilize the microwave-circuit design techniques or configurations, i.e., a distributed amplifier, an analog phase shifter, clock (CLK) amplifiers for these systems, based on the same HBT technology.…”

Section: Introductionmentioning

confidence: 98%

See 1 more Smart Citation

An InGaP-HBT IC Chipset for 40-Gbps Optical-transmission Systems on the Basis of a Microwave-circuit Design Scheme

Hosoya

Suzuki

Amamiya

et al. 2003

33rd European Microwave Conference, 2003

Self Cite

View full text Add to dashboard Cite

An InGaP-HBT IC chipset for 40-Gbps optical-transmission systems was developed on the basis of a microwave-circuit design scheme    design techniques, circuit configurations, and concepts. A distributed amplifier achieved ≥ ≥ ≥ ≥50-GHz bandwidth and ≥ ≥ ≥ ≥164-GHz gainbandwidth product, which are state-of-the-art values for GaAs-HBT-based baseband distributed amplifiers. A compact 40-GHz analog phase shifter with small insertionloss variation, and 20-GHz/40-GHz clock amplifiers with very low power consumption (about 10 mW) were also realized. Moreover, a new approach    inserting impedancetransformer circuits    to enable 'impedance matching' in high-speed digital ICs was successfully applied to a 40-Gbps decision circuit to prevent unwanted gain peaking and jitter increase caused by transmission lines without sacrificing chip size.

show abstract

Section: Ingap-hbt Technologymentioning

confidence: 99%

Section: Introductionmentioning

confidence: 98%

An InGaP-HBT IC Chipset for 40-Gbps Optical-transmission Systems on the Basis of a Microwave-circuit Design Scheme

Hosoya

Suzuki

Amamiya

et al. 2003

33rd European Microwave Conference, 2003

Self Cite

View full text Add to dashboard Cite

show abstract

“…One promising way to avoid these problems is to use heavily doped layer only in the extrinsic base region, since the extrinsic base resistance, including base contact resistance, is usually the dominant part of the total base resistance. While a selectively grown extrinsic base structure is effective for reducing the base resistance [1,2], it cannot directly reduce the basecollector capacitance. For this reason, it is desirable to overgrow the heavily doped extrinsic base on buried SiO 2 surrounding the collector pedestal since the dielectric constant of SiO 2 is much smaller than that of semiconductor material.…”

Section: Introductionmentioning

confidence: 99%

MOCVD selective growth of InP through narrow openings and its application to InP HBT extrinsic base regrowth

Dong

Okuno

Mishra

2004

Journal of Crystal Growth

View full text Add to dashboard Cite

“…The measured peak fT and fwere 96 GHz and 240 GHz, respectively, for a 1.6 y m X 4.6 p m emitter. The AlGaAshGaAs HBT process has previously been described in detail [4] [5] [6]. The layer structure of the fabricated HBTs is shown in Table 1.…”

Section: Device Descriptionmentioning

confidence: 99%

An HBT preamplifier for 40-Gb/s optical transmission systems

Suzuki

Shimawaki²,

Amamiya³

et al.

GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996

Self Cite

View full text Add to dashboard Cite

30,. I 6 1 U + I ._ 20: 3 7 J 1 0 -m Abistract-A preamplifier for 40-Gb/s optical transmission systems has been constructed using AIGaAdInGaAs HBTs with p+ regrown extrinsic base layers. This preamplifier achieved a bandwidth of 34.6GHz and a transimpedance gain of 41.6dB0. This is the widest bandwidth in a preamplifier ever reported. These characteristics are suitable for use in a 40Gb/s optical receiver. The results indicate that AIGaAsDnGaAs HBTs with p+ regrown extrinsic base layers are very promising for production of 406b/s optical transmission systems. -RB -XF I INTRODUCTION1 Ol-Gb/s optical transmission systems are becoming widely used. Higher ultra-speed and higher ultra-capacity transmission systems are expected to be the backbone of hture multimedia communications. Considerable effort has been devoted to developing ultra-high-speed and ultra-highcapacity transmission systems, such as using wavelength division multiplexing (WDM) and time division multiplexing (TDIM). Recently, a 1.1-Tb/s (%-wavelength X 20 Gb/s) WDlM transmission experiment was reported [ 11. High-speed electronic circuit technology is the key to TDM systems for 4O-Cib/s data rates and WDM systems which use 40-Gb/s data rates per channel.Hletrojunction bipolar transistors (HBTs) have demonstrated excellent potential for high-speed ICs and microwave applications. We have already developed highspeed ICs for lO-Gb/s and 20-Gb/s optical transmission systems using AlGaAdGaAs HBTs with fT of 45 GHz and f, , of 105 GHz and a hetero-gurdring hlly self-aligned HBT (HG-FST) process [2] [3].Tlhis paper describes the performance of a preamplifier for 40-Gb/s optical transmission systems. The main features are as follows. (1) High-performance AlGaAdInGaAs HBTs with p' regrown extrinsic base layers, instead of InP-based HBTs, were implemented into the circuit. (2) An accurate design technique was used. II . FOR BROADBAND PREAMPLIFIERA preamplifier converts current data signals fi-om a photodetector into voltage data signals and amplifies in an optical receiver. A bandwidth of more than 28 GHz (70 YO of the bit rate) is necessary to achieve 40-Gb/s. The relation between the bandwidth of the preamplifier and the device parameters of the implemented transistor is described in this session. The bandwidths of the preamplifier dependence of the base resistance (RB) and the base transit time ( ' I: F) in conventional AlGaAdGaAs HBTs are shown in Fig. 1. The bandwidth mainly depends on the base resistance and the base transit time, and reductions in the base resistance and the base transit time are indispensable for more broadband preamplifiers. However, there is a trade off between the base resistance and the base transit time. AlGaAshGaAs HBTs with p+ regrown extrinsic base layers, which can reduce both the base resistance and the base transit time, have been implemented into the preamplifier. t I I I I I 0 1 2 D e v i a t i o n ( a r b . ) Fig 1 The bandwidths of the preamplifier dependence of the base resistance and the base transit time in a conventiona...

show abstract

High-f/sub max/ AlGaAs/InGaAs and AlGaAs/GaAs HBT's with p/sup +//p regrown base contacts

Cited by 52 publications

References 31 publications

An InGaP-HBT IC Chipset for 40-Gbps Optical-transmission Systems on the Basis of a Microwave-circuit Design Scheme

An InGaP-HBT IC Chipset for 40-Gbps Optical-transmission Systems on the Basis of a Microwave-circuit Design Scheme

MOCVD selective growth of InP through narrow openings and its application to InP HBT extrinsic base regrowth

An HBT preamplifier for 40-Gb/s optical transmission systems

Contact Info

Product

Resources

About