High External Photoluminescence Quantum Yield in Tin Halide Perovskite Thin Films

Poli, Isabella; Kim, Guan‐Woo; Wong, E Laine; Treglia, Antonella; Folpini, Giulia; Petrozza, Annamaria

doi:10.1021/acsenergylett.0c02612

Cited by 27 publications

(30 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…analyzed the PLQY of FA 0.85 Cs 0.15 SnI 3 compared to (FA 0.85 MA 0.15 ) 0.95 Pb(I 0.85 Br 0.15 ) 3 films. [ 75 ] Both films showed similar PLQYs at excitation density close to 1 sun equivalent excitation. However, the relative PLQY of Pb‐based compounds increased as a function of the excitation power, while the PLQY of the Sn‐based films had a feeble slope ( Figure ).…”

Section: D Perovskitesmentioning

confidence: 96%

Section: D Perovskitesmentioning

confidence: 99%

“…Figure 7. a) External PLQY and b) relative PLQY of FA 0.85 Cs 0.15 SnI 3 and (FA 0.85 MA 0.15 ) 0.95 Pb(I 0.85 Br 0.15 ) 3 thin films. Reproduced under the terms of the Creative Common Attribution 4.0 International license [75]. Copyright 2021, ACS.…”

mentioning

confidence: 99%

See 2 more Smart Citations

Tin Halide Perovskites: From Fundamental Properties to Solar Cells

et al. 2021

View full text Add to dashboard Cite

Metal halide perovskites have unique optical and electrical properties, which make them an excellent class of materials for a broad spectrum of optoelectronic applications. However, it is with photovoltaic devices that this class of materials has reached the apotheosis of popularity. High power conversion efficiencies are achieved with lead‐based compounds, which are toxic to the environment. Tin‐based perovskites are the most promising alternative because of their bandgap close to the optimal value for photovoltaic applications, the strong optical absorption, and good charge carrier mobilities. Nevertheless, the low defect tolerance, the fast crystallization, and the oxidative instability of tin halide perovskites currently limit their efficiency. The aim of this review is to give a detailed overview of the crystallographic, photophysical, and optoelectronic properties of tin‐based perovskite compounds in their multiple forms from 3D to low‐dimensional structures. At the end, recent progress in tin‐based perovskite solar cells are reviewed, mainly focusing on the detail of the strategies adopted to improve the device performances. For each subtopic, the current challenges and the outlook are discussed, with the aim to stimulate the community to address the most important issues in a concerted manner.

show abstract

Section: D Perovskitesmentioning

confidence: 96%

Section: D Perovskitesmentioning

confidence: 99%

See 1 more Smart Citation

Tin Halide Perovskites: From Fundamental Properties to Solar Cells

et al. 2021

View full text Add to dashboard Cite

show abstract

“… 29 , 71 The introduction of such radiative recombination pathways means that tin halide perovskites often display relatively high photoluminescence quantum efficiencies, despite their short charge-carrier lifetimes. 72 , 73 Such luminescence enhancement with respect to lead-only counterparts is particularly prominent at low photo-generated charge-carrier densities, given the pseudo-monomolecular nature of the doping-induced radiative recombination. 71 While the high luminescence efficiency of tin halide perovskites is somewhat of a red herring for photovoltaic devices, it may however be advantageous for light-emitting and lasing applications.…”

Section: Charge-carrier Recombinationmentioning

confidence: 99%

Optoelectronic Properties of Tin–Lead Halide Perovskites

2021

View full text Add to dashboard Cite

Mixed tin–lead halide perovskites have recently emerged as highly promising materials for efficient single- and multi-junction photovoltaic devices. This Focus Review discusses the optoelectronic properties that underpin this performance, clearly differentiating between intrinsic and defect-mediated mechanisms. We show that from a fundamental perspective, increasing tin fraction may cause increases in attainable charge-carrier mobilities, decreases in exciton binding energies, and potentially a slowing of charge-carrier cooling, all beneficial for photovoltaic applications. We discuss the mechanisms leading to significant bandgap bowing along the tin–lead series, which enables attractive near-infrared bandgaps at intermediate tin content. However, tin-rich stoichiometries still suffer from tin oxidation and vacancy formation which often obscures the fundamentally achievable performance, causing high background hole densities, accelerating charge-carrier recombination, lowering charge-carrier mobilities, and blue-shifting absorption onsets through the Burstein–Moss effect. We evaluate impacts on photovoltaic device performance, and conclude with an outlook on remaining challenges and promising future directions in this area.

show abstract

“…Despite some advantages, the presence of lead and the toxicity in these kind of cells is a major blockage to its commercialization (Xu et al 2020). In order to overcome the existing shortcoming related to the presence of lead in the perovskite solar cell, the main competitor is to replace tin (Xu 2021;Poli et al 2021;Jiang et al 2020;) and germanium (Soto-Montero et al 2020; belonging to the same lead group, therefore we expect the exhibition of similar properties. For lead-free perovskite solar cells, since tin has the same diameter as lead, the scientists are encouraged to replace tin with lead to form ASnX 3 (Ogomi et al 2014;Zuo et al 2014;Noel et al 2014;Liao et al 2016;Xi et al 2017;Shi et al 2017).…”

Section: Introductionmentioning

confidence: 99%

Numerical simulation of inorganic Cs2AgBiBr6 as a lead-free perovskite using device simulation SCAPS-1D

2021

View full text Add to dashboard Cite

Double perovskite, Cs 2 AgBiBr 6 , is introduced as a lead-free perovskite solar cell. Device modeling of Cs 2 AgBiBr 6 (DP) was accomplished to obtain the optimum parameters using the Solar Cell Capacitance Simulator (SCAPS). Two devices with two different hole transport layers (HTLs) were investigated, including P 3 HT and Cu 2 O. For both devices with different HTLs, an optimal thicknesses of 1200 nm and defect densities of 1.0 ×10 14 cm -3 for DP layer were attained. For both HTLs, conduction band offset, CBO, is -0.21 eV and valence band offset, VBO, is +0.16 eV. For shallow acceptor doping concentration of P 3 HT and Cu 2 O, the values of 5.0 × 10 19 and 5.0 × 10 17 cm −3 were obtained, respectively. As far as the shallow donor density of electron transport layers (ETLs) is concerned, for both cases, the optimum value of 5.0 × 10 19 cm -3 were achieved. For capture cross section, , , in absorber layer for both HTLs, the optimal value at , of 10 −20 cm 2 for , (defect density of DP) is 10 16 cm −3 , at , of 10 −19 cm 2 for , is 10 15 cm −3 , at , of 10 −18 cm 2 for , is 10 14 cm −3 , at , of 10 −17 cm 2 for , is 10 13 cm −3 , and at , of 10 −16 cm 2 for , is 10 12 cm −3 . For P 3 HT device, the interface defect density of P 3 HT/Cs 2 AgBiBr 6 is occurred at 1.0×10 14 cm -2 , and for Cs 2 AgBiBr 6 /SnO 2 is happened at 1.0×10 9 cm -2 . For Cu 2 O device, the interface defect density of Cu 2 O/ Cs 2 AgBiBr 6 is befallen at 1.0×10 13 cm -2 , and for Cs 2 AgBiBr 6 /SnO 2 is happened at 1.0×10 10 cm -2 . As for radiative recombination, for P 3 HT device, the optimal value is happened at 2.3×10 -13 cm 3 /s, however, for Cu 2 O device is occurred at 2.3×10 -12 cm 3 /s. Finally, for P 3 HT device, a maximum power conversion efficiency, PCE, of 11.69% (open-circuit voltage, V oc , of 2.02 V, short-circuit current density, J sc , of 6.39 mA/cm 2 , and fill-factor, FF, of 0.90 (90% )) were achieved, and for Cu 2 O device, a PCE of 11.32% (V oc of 1.97 V, J sc of 6.39 mA/cm 2 , and FF of 0.895 (89.5% )) were attained. This is the highest efficiency for Cs 2 AgBiBr 6 double perovskite solar cell which was achieved till now. Finally, our results are providing towards fabricating a lead-free and inorganic solar cell.Keywords Cs 2 AgBiBr 6 . Double perovskite solar cell. Lead-free perovskite. Conduction band offset (CBO). Valence band offset (VBO). SCAPS

show abstract

High External Photoluminescence Quantum Yield in Tin Halide Perovskite Thin Films

Abstract: We show that pristine thin films made of tin halide perovskite have external photoluminescence quantum yield comparable to that of lead halide perovskite, i.e., the material in use to prepare state-of-the-art perovskite solar cells.

Cited by 27 publications

References 9 publications

Tin Halide Perovskites: From Fundamental Properties to Solar Cells

Tin Halide Perovskites: From Fundamental Properties to Solar Cells

Optoelectronic Properties of Tin–Lead Halide Perovskites

Numerical simulation of inorganic Cs2AgBiBr6 as a lead-free perovskite using device simulation SCAPS-1D

Contact Info

Product

Resources

About