2020
DOI: 10.1109/tns.2020.2970535
|View full text |Cite
|
Sign up to set email alerts
|

High-Energy Versus Thermal Neutron Contribution to Processor and Memory Error Rates

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
2

Citation Types

0
12
0

Year Published

2020
2020
2023
2023

Publication Types

Select...
6
2

Relationship

2
6

Authors

Journals

citations
Cited by 16 publications
(13 citation statements)
references
References 20 publications
0
12
0
Order By: Relevance
“…Figure 1 shows the decay of Cobalt which produces different source of energy, β and γ radiations, which carry different kinetic energies, between 0.31 MeV and 1.33 MeV. Radioactive decay produces ionizing radiations which affect electronic circuits as shown in many papers [17], [18], [20], [26] and in circuit manufacturing recommendations guides [31].…”
Section: Approachmentioning
confidence: 99%
See 1 more Smart Citation
“…Figure 1 shows the decay of Cobalt which produces different source of energy, β and γ radiations, which carry different kinetic energies, between 0.31 MeV and 1.33 MeV. Radioactive decay produces ionizing radiations which affect electronic circuits as shown in many papers [17], [18], [20], [26] and in circuit manufacturing recommendations guides [31].…”
Section: Approachmentioning
confidence: 99%
“…[24], [29] show that SEU happen spontaneously due to cosmic radiations, coming from sources in outer space. More recent papers [20], [26], show that errors can be induced even in very recent electronics. In another paper [1], shown in Figure 2 it was possible to observe in the geographical zone of Tibet, radiations beyond 100TeV of energy which could eventually permanently damage the circuits.…”
Section: Approachmentioning
confidence: 99%
“…These are the reasons why ThNs are becoming a major issue for the LHC accelerator but not least for avionic, terrestrial, medical, and automotive applications. As shown in [8], evaluating the response of different CPUs and GPUs, ThNs can contribute to the ground-level failure-in-time (FIT) rate up to 59% of the total. This article will focus on the soft error rate (SER) due to ThNs along different locations of the accelerator in comparison to that from highly energetic particles.…”
Section: Introductionmentioning
confidence: 99%
“…The devices involved in this study consist of SRAM, field-programmable gate array (FPGA), and Flash memories, which have been tested in thermal and HEN facilities. Ionizing radiation and, in particular, neutron effects on NAND flash memories have been extensively studied [8]- [12]. At sea level, the error rate due to radiation in NAND flash is comparable to that induced by other mechanisms affecting reliability, such as program and read disturbs, random telegraph noise, and so on.…”
Section: Introductionmentioning
confidence: 99%
“…However, isotope enrichment is very expensive and often not used in commercial electronics that are now frequently used in critical applications. Recent studies have shown that in some cases the Failure In Time (FIT) due to thermal neutrons can be comparable to the FIT due to fast neutrons in terrestrial applications [11,12]. It is important to notice that sensitivity to thermal neutrons is very device-dependent.…”
mentioning
confidence: 99%