High-energy terahertz pulses from semiconductors pumped beyond the three-photon absorption edge

Polonyi, Gy.; Monoszlai, B.; Gäumann, G.; Rohwer, Egmont; Andriukaitis, G.; Balčiūnas, Tadas; Pugžlys, Audrius; Baltuška, Andrius; Feurer, Thomas; Hebling, J.; Fülöp, J. A.

doi:10.1364/oe.24.023872

Cited by 48 publications

(36 citation statements)

References 38 publications

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“…[75] The reason is the elimination of 2PA by the sufficiently long pump wavelength in case of GaAs. [46] Such a high efficiency is comparable to that achieved with LN at high pulse energies [63] and clearly shows the potential of semiconductors for high-energy THz pulse generation. [46] The pump wavelengths of 1.45 and 1.7 µm are sufficiently long to suppress 2PA and 3PA, respectively, and the 3PA coefficient has an expected minimum around 1.45 µm.…”

Section: Novel Concepts For Infrared Pumpingmentioning

confidence: 62%

“…[44] This efficiency is more than one order-of-magnitude higher than that achieved previously with 0.8 µm pumped ZnTe. [46] The pump wavelengths of 1.45 and 1.7 µm are sufficiently long to suppress 2PA and 3PA, respectively, and the 3PA coefficient has an expected minimum around 1.45 µm. More recently, a comparative study in ZnTe demonstrated a 3.5-fold increase of the THz generation efficiency when pumped at 1.7 µm, rather than at 1.45 µm.…”

Section: Novel Concepts For Infrared Pumpingmentioning

confidence: 97%

“…[12] THz pulse energies on the order of 1 µJ were demonstrated both with OR [44,75] and OPA. [45,46] For this reason, OR in semiconductors is discussed here in more detail. [77] Recent developments indicate that OR will expectedly be scalable to substantially higher, mJ-level energies.…”

Section: Semiconductor Nonlinear Materialsmentioning

confidence: 99%

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Laser‐Driven Strong‐Field Terahertz Sources

Fülöp

Tzortzakis

Kampfrath

2019

Advanced Optical Materials

265

147

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reason for this interest relies on the fact that THz radiation can couple resonantly to numerous fundamental motions of ions, electrons, and electron spins in all phases of matter. For example, in solids, the THz range overlaps with the frequency of lattice vibrations (phonons), the collision rates of conduction electrons, the binding energy of bound electron-hole pairs (excitons), and the precession frequency of spin waves (magnons). Consequently, THz radiation, both continuous-wave and pulsed, has been used for characterization of and gaining insight into elementary processes in complex materials. The majority of these studies used relatively weak THz fields and, thus, probed the linear response of the material, without inducing notable material modifications.Only recently, however, completely new avenues in THz science were opened up by triggering nonlinear THz responses of materials. [3][4][5][6][7][8][9][10][11][12][13] Instead of using weak fields to primarily observe selected THz modes such as phonons or magnons, strong fields allow one to actively drive them to unprecedentedly large amplitudes, potentially thereby resulting in novel states of matter. [6,8,11] For example, simulations suggest that exciting matter with intense THz transients may lead to massive modifications of electrically [14] or magnetically [15] ordered domains and enable the acceleration of free ions to ≈1 MeV, [16] and postacceleration to 50-100 MeV energies. [17] Remarkable experimental results such as switching of magnetic order, [18,19] parametric amplification of optical phonons, [20] novel insights into spin-lattice coupling, [21,22] and acceleration of free electrons in a THz linear accelerator [23] were achieved only recently. This progress has been made possible by the development of laser-driven table-top THz sources routinely providing pulses with unprecedented energies and peak electric and magnetic field strengths throughout the entire THz spectral range. Different laser-based THz pulse generation techniques can be used to access different parts of the spectral range extending from 0.1 to 10 THz. Some of the recently developed technologies enable the generation of radiation with even larger bandwidth or tuning range up to 100 THz and beyond, which lead to an extension of what is called the THz spectral range. An overview of the approximate spectral coverage and the achieved highest pulse energies and peak electric-field strengths of various laserdriven technologies is given in Figure 1. ScopeIn this work, the basic principles of femtosecond-laser-driven intense pulsed THz sources and their recent development are reviewed. These sources are capable of delivering peak electric field strengths on the MV cm −1 scale. Corresponding typical THz pulse energies are on the µJ-to-mJ level, depending on A review on the recent development of intense laser-driven terahertz (THz) sources is provided here. The technologies discussed include various types of sources based on optical rectification (OR), spintronic emitters, and laserfilame...

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Section: Novel Concepts For Infrared Pumpingmentioning

confidence: 62%

Section: Novel Concepts For Infrared Pumpingmentioning

confidence: 97%

See 1 more Smart Citation

Laser‐Driven Strong‐Field Terahertz Sources

Fülöp

Tzortzakis

Kampfrath

2019

Advanced Optical Materials

265

147

View full text Add to dashboard Cite

show abstract

“…Using pump pulses at longer wavelength could increase the THz bandwidth due to better phase matching for higher THz frequencies. The saturation level of the pump power can also be increased due to reduced multiphoton absorption at longer wavelengths [35,36]. For example, when the pump wavelength is longer than 1500 nm, 4-photon absorption instead of the current 3-photon absorption becomes the lowest order.…”

Section: Efficient Thz Generation In Hmb-tms Crystalsmentioning

confidence: 99%

Efficient terahertz generation in highly nonlinear organic crystal HMB-TMS

Lu¹,

Lee²,

Liang³

et al. 2018

Opt. Express

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We report on generation of strong and broadband terahertz (THz) pulses via collinearly phase-matched optical rectification of near-infrared femtosecond pulses in the organic nonlinear optical HMB-TMS (2-(4-hydroxy-3-methoxystyryl)-3-methylbenzo[d]thiazol-3-ium 2,4,6-trimethylbenzenesulfonate) single crystals which exhibit optimal molecular orientation and large macroscopic optical nonlinearity for efficient THz wave generation. Single-cycle THz pulses with a peak electric field strength of 0.66 MV/cm and a bandwidth from 0.1 to 5.4 THz are achieved from an HMB-TMS crystal with only a 2-mm clear aperture pumped by 1350 nm pulses at moderate fluences. The generated THz energy is about 1 µJ and the corresponding pump-to-THz energy conversion efficiency reaches 0.23%.

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“…Single-cycle THz pulses are generated in table-top setup by optical rectification of femtosecond laser pulses in nonlinear organic [1,9] and inorganic [10,11] crystals, in gas-plasma driven by two-colour laser [12], and in large scale accelerator facilities using relativistic charged particle beams [3]. The advantages of optical rectification in highly-nonlinear crystal are a conversion efficiency of a few percents, shot-to-shot radiation stability, and high beam quality, which allows tight focus and highest field [1,2], but has several limitations.…”

Section: Introductionmentioning

confidence: 99%

Broadband and narrowband laser-based terahertz source and its application for resonant and non-resonant excitation of antiferromagnetic modes in NiO

et al. 2019

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A versatile table-top high-intense source of terahertz radiation, enabling to generate pulses of both broadband and narrowband spectra with a tunable frequency up to 3 THz is presented. The terahertz radiation pulses are generated by optical rectification of femtosecond pulses of Cr:forsterite laser setup in nonlinear organic crystal OH1. Electric field strengths of broadband and narrowband terahertz pulses were achieved close to 20 MV/cm and more than 2 MV/cm, correspondingly. Experiments on excitation of spin subsystem oscillations of an antiferromagnetic NiO were carried out. Selective excitation of 0.42 THz mode was observed for the first time at room temperature by a narrowband terahertz pulses tuned close to mode frequency.

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High-energy terahertz pulses from semiconductors pumped beyond the three-photon absorption edge

Cited by 48 publications

References 38 publications

Laser‐Driven Strong‐Field Terahertz Sources

Laser‐Driven Strong‐Field Terahertz Sources

Efficient terahertz generation in highly nonlinear organic crystal HMB-TMS

Broadband and narrowband laser-based terahertz source and its application for resonant and non-resonant excitation of antiferromagnetic modes in NiO

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