High-energy proton irradiation damage on two-dimensional hexagonal boron nitride

Lee, Dong-Ryul; Yoo, Sang Hyuk; Bae, Jinho; Park, Hyunik; Kang, Keonwook; Kim, Jihyun

doi:10.1039/c9ra03121a

Cited by 2 publications

(2 citation statements)

References 26 publications

(36 reference statements)

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“…A high I GS of 8.5 × 10 –7 A was maintained until the termination of the proton beam, when I GS recovered to its original value at the fourth cycle. The increased I GS observed in this study can be attributed to the hopping or tunneling of carriers through the ionized trapping states in the dielectric that were formed via the ionizing radiation dose. , …”

Section: Resultsmentioning

confidence: 99%

“…The increased I GS observed in this study can be attributed to the hopping or tunneling of carriers through the ionized trapping states in the dielectric that were formed via the ionizing radiation dose. 58,59 In situ measurements of the (4:1:1) ZITO TFT revealed that after the end of proton exposure, the enhanced I DS remains almost unchanged, with the negative-shifted V th recovering only to −68 V for the eighth cycle (Figure 3C and Table S7). Although such in situ degradation could originate from the additional interface-trapped and oxide-trapped charge buildup in the gate dielectric layer, the radiation-induced conductivity increase in the semiconductor layer should not be overlooked.…”

Section: In Situ Irradiation Results For (4:1:1) Zito Tftsmentioning

confidence: 99%

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In Situ Radiation Hardness Study of Amorphous Zn–In–Sn–O Thin-Film Transistors with Structural Plasticity and Defect Tolerance

Choi

Kang

et al. 2023

ACS Appl. Mater. Interfaces

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Solution-processed metal-oxide thin-film transistors (TFTs) with different metal compositions are investigated for ex situ and in situ radiation hardness experiments against ionizing radiation exposure. The synergetic combination of structural plasticity of Zn, defect tolerance of Sn, and high electron mobility of In identifies amorphous zinc−indium−tin oxide (Zn−In−Sn−O or ZITO) as an optimal radiation-resistant channel layer of TFTs. The ZITO with an elemental blending ratio of 4:1:1 for Zn/In/Sn exhibits superior ex situ radiation resistance compared to In−Ga− Zn−O, Ga−Sn−O, Ga−In−Sn−O, and Ga−Sn−Zn−O. Based on the in situ irradiation results, where a negative threshold voltage shifts and a mobility increase as well as both off current and leakage current increase are observed, three factors are proposed for the degradation mechanisms: (i) increase of channel conductivity, (ii) interface-trapped and dielectric-trapped charge buildup, and (iii) trap-assisted tunneling in the dielectric. Finally, in situ radiation-hard oxide-based TFTs are demonstrated by employing a radiationresistant ZITO channel, a thin dielectric (50 nm SiO 2 ), and a passivation layer (PCBM for ambient exposure), which exhibit excellent stability with an electron mobility of ∼10 cm 2 /V s and aΔV th of <3 V under real-time (15 kGy/h) gamma-ray irradiation in an ambient atmosphere.

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Section: Resultsmentioning

confidence: 99%

Section: In Situ Irradiation Results For (4:1:1) Zito Tftsmentioning

confidence: 99%