High energy electron radiation effect on Ni and Ti/4H-SiC Schottky barrier diodes at room temperature

Lin, Zhang; Zhang, Yimen; Zhang, Yuming; Han, Chao; Ma, Yuanming

doi:10.1088/1674-1056/18/5/034

Cited by 6 publications

(5 citation statements)

References 9 publications

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“…The peak capacitance is lower for irradiated diodes. These peaks shift to the negative bias region due to a net positive charge at the interface [25][26][27][28]. A bump is observed close to the accumulation region when the bias is swiped from accumulation to depletion.…”

Section: Accepted Manuscriptmentioning

confidence: 99%

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Effect of 60Co γ-ray irradiation on electrical properties of Ti/Au/GaAs1−xNx Schottky diodes

Teffahi

Hamri

Mostefa

et al. 2016

Current Applied Physics

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(2016) Effect of Co-60 gamma-ray irradiation on electrical properties of Ti/Au/GaAs1-xNx Schottky diodes. Current Applied Physics, 16 (8). pp. 850-858. ISSN 1878850-858. ISSN -1675 Access from the University of Nottingham repository: http://eprints.nottingham.ac.uk/39520/1/1-s2.0-S156717391630116X-main.pdf Copyright and reuse:The Nottingham ePrints service makes this work by researchers of the University of Nottingham available open access under the following conditions. This article is made available under the Creative Commons Attribution Non-commercial No Derivatives licence and may be reused according to the conditions of the licence. For more details see: http://creativecommons.org/licenses/by-nc-nd/2.5/ A note on versions:The version presented here may differ from the published version or from the version of record. If you wish to cite this item you are advised to consult the publisher's version. Please see the repository url above for details on accessing the published version and note that access may require a subscription. This is a PDF file of an unedited manuscript that has been accepted for publication. As a service to our customers we are providing this early version of the manuscript. The manuscript will undergo copyediting, typesetting, and review of the resulting proof before it is published in its final form. Please note that during the production process errors may be discovered which could affect the content, and all legal disclaimers that apply to the journal pertain. M A N U S C R I P T A C C E P T E D ACCEPTED MANUSCRIPT Effect aek1976@outlook.com Abstract:Current-voltage (I-V), capacitance-voltage-frequency (C-V-f) and conductance-voltagefrequency (G/ω-V-f) measurements at room temperature are used to study 50 kGy 60 Co γ-ray electrical properties irradiation dependence of Ti/Au/GaAs 1-x N x Schottky diodes with 0.2%; 0.4%; 0.8% and 1.2% nitrogen dilution. This γ-ray irradiation induces a permanent damage that has increased ideality factor and series resistance for all samples. It was accompanied by a decrease in Schottky barrier height with nitrogen content up to 0.4%N and remained constant thereafter. Radiation was also found to degrade the reverse leakage current. At high frequency (1 MHz), capacitance and conductance decreased after radiation due to a decrease in net doping concentration. Interface state density and series resistance were determined from C-V-f and G/ω-V-f characteristics using Hill-Coleman methods. Interface states density exponentially decreased with increasing frequency confirming the behavior of interface traps response to ac signal. Series resistance increases after irradiation is attributed to carrier's removal effect and mobility degradation. It has two peaks in the accumulation and inversion region for some diodes (0.4%N, 0.8%N). γ-ray irradiation produced traps levels and recombination centers that reduce relaxation time. An increase in %N content can impede irradiation damage with even some compensation when the percent of diluted nitrogen is high (1.2%N).

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Section: Accepted Manuscriptmentioning

confidence: 99%

“…The density of interface states (Nss) as a function of frequency was extracted from C-V-f and G/ω-V-f characteristics. From Hill and Coleman method [13,26,[27][28][29][30][31][32], the density of interface states (N ss ) is given by:…”

Section: Accepted Manuscriptmentioning

confidence: 99%

Effect of 60Co γ-ray irradiation on electrical properties of Ti/Au/GaAs1−xNx Schottky diodes

Teffahi

Hamri

Mostefa

et al. 2016

Current Applied Physics

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“…Moreover, to determine the values of mean N ss for 50 dots of Au/n-Si/Al Schottky structures, the N ss values are also calculated from Eq. (11) and the data of Fig. 2.…”

Section: Resultsmentioning

confidence: 89%

Section: Introductionmentioning

confidence: 99%

“…Schottky structures have performance to sustain low power loss, high switching speed and high critical breakdown electric fields [11]. They have been used as a radiation detector and high voltage rectifier [11,12]. Electronic properties of Schottky structures are featured by their major electrical parameters such as ideality factor (n), Schottky barrier height (U B ), series resistance (R s ) and interface state density (N ss ) determined from forward-bias current-voltage (I-V) characteristics, which introduce beneficial information about the nature of the structure.…”

Section: Introductionmentioning

confidence: 99%

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Analysis of inhomogeneous device parameters using current–voltage characteristics of identically prepared lateral Schottky structures

et al. 2015

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We have identically fabricated 50 dots of Au/n-Si/Al Schottky structures and investigated the mean values of diode parameters from current-to-voltage (I-V) characteristics at 300 K. The values of diode parameters are determined from I-V characteristics, and Cheung and the modified Norde functions are varied from diode to diode although the Schottky structures are identically fabricated. The experimental values of ideality factor (n) and barrier height (U B ) for 50 dots of the Au/n-Si/Al Schottky structures have ranged from 1.048 to 1.695 and from 0.708 to 0.807 eV, respectively. The interface state densities (N ss ) are approximately obtained from 2 9 10 13 to 2 9 10 11 eV -1 cm -2 in the energy range from E c -0.45 to E c -0.75 eV, respectively. These findings can be referred to lateral barrier inhomogeneities of Schottky diodes. The distributions of all calculated parameters have been fitted by means of Gaussian function. The mean n and U B values have been found to be 1.316 ± 0.213 and 0.758 ± 0.030 eV, respectively. Furthermore, the value of lateral homogenous barrier height for 50 dots of Schottky structures is determined as 0.802 eV from the linear relationship between n and U B .

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Simulations and Analysis of Electrical Characteristics of 4H-SiC/Pt Schottky Barrier Diode

Khalid

Riaz

Naseem

2015

Materials Today: Proceedings

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High energy electron radiation effect on Ni and Ti/4H-SiC Schottky barrier diodes at room temperature

Cited by 6 publications

References 9 publications

Effect of 60Co γ-ray irradiation on electrical properties of Ti/Au/GaAs1−xNx Schottky diodes

Effect of 60Co γ-ray irradiation on electrical properties of Ti/Au/GaAs1−xNx Schottky diodes

Analysis of inhomogeneous device parameters using current–voltage characteristics of identically prepared lateral Schottky structures

Simulations and Analysis of Electrical Characteristics of 4H-SiC/Pt Schottky Barrier Diode

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