High-energy argon-ion implantation for waveguide formation in (AlGa)As/GaAs multilayers

Abstract

We have intermixed GaAs/(AlGa)As multiquantum structures for waveguides and lasers by 3 MeV Ar implantation and 850 °C, 30 min closed-tube annealing. Buried-heterostructure lasers defined by Ar mixing had threshold currents of 100 mA for 370-μm-long devices. As waveguides for 1.15 μm light, the devices exhibited losses of 25 cm−1 in the annealed, implanted regions, and 15 cm−1 in unimplanted regions defined by adjacent implants. Analysis of the results illustrates important considerations for implant mixing for waveguide formation.

Semiconductor lasers using diffused quantum-well structures

“…However, the adverse effects of using zinc or silicon IID process are: 1) the requirement of long annealing time and 2) the enhancement of free-carrier absorption losses. For the neutral impurities, the typically used species are argon, boron, and fluorine [3], [21]. It is noted that neutral impurities are commonly used in IID process to reduce: 1) optical losses and 2) leakage current in grating sections of the distributed Bragg reflector (DBR) lasers.…”